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BSP15 [ZETEX]

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR; SOT223 PNP硅平面高压晶体管
BSP15
型号： BSP15
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
SOT223 PNP硅平面高压晶体管

晶体 晶体管 功率双极晶体管 高压 局域网
文件： 总1页 (文件大小：46K)
中文：  中文翻译
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SOT223 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
ISSUE 3 – FEBRUARY 1996  
BSP15  
FEATURES  
*
*
High VCEO  
C
Low saturation voltage  
E
COMPLEMENTARY TYPE: – BSP20  
PARTMARKING DETAIL: – BSP15  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-200  
-200  
-5  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-0.5  
2
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -200  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
-200  
-5  
V
IC=-10mA*  
Emitter-Base Breakdown  
Voltage  
V
IE=-100µA  
Collector Cut-Off  
Current  
-1  
VCB=-175V  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-20  
VEB=-4V  
Collector-Emitter Saturation VCE(sat)  
Voltage  
- 2.0  
-0.5  
V
V
IC=-50mA, IB=-5mA*  
IC=-30mA, IB=-3mA*  
Static Forward Current  
Transfer Ratio  
hFE  
30  
15  
150  
IC=-50mA, VCE=-10V*  
Transition Frequency  
fT  
MHz  
pF  
IC=-10mA, VCE=-20V*  
f = 20MHz  
Output Capacitance  
Cobo  
15  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
For typical characteristics graphs see FMMTA92 datasheet.  
3 - 58  

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