BSP149 [INFINEON]
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance); SIPMOS小信号晶体管（ N沟道耗尽型高动态电阻）
| 型号： | BSP149 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIPMOS Small-Signal Transistor
BSP 149
● VDS 200 V
● ID
0.48 A
● RDS(on) 3.5 Ω
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in VGS(th)
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1
2
3
4
BSP 149 Q67000-S071 E6327: 1000 pcs/reel
G
D
S
D
BSP 149 SOT-223
Maximum Ratings
Parameter
Symbol
VDS
Values
200
Unit
Drain-source voltage
V
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
VDGR
VGS
200
± 14
± 20
0.48
1.44
1.8
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 28 ˚C
Vgs
ID
A
Pulsed drain current,
TA = 25 ˚C
TA = 25 ˚C
ID puls
Ptot
Max. power dissipation,
W
Operating and storage temperature range
Tj, Tstg
– 55 … + 150
˚C
Thermal resistance 1)
chip-ambient
chip-soldering point RthJS
RthJA
70
10
K/W
–
DIN humidity category, DIN 40 040
–
–
E
IEC climatic category, DIN IEC 68-1
55/150/56
1)
Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.
Semiconductor Group
1
09.96
BSP 149
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS(th)
IDSS
V
V
GS = − 3 V, ID = 0.25 mA
200
–
–
Gate threshold voltage
VDS = 3 V, ID = 1 mA
− 1.8
− 1.2
− 0.7
Drain-source cutoff current
VDS = 200 V, VGS = − 3 V
Tj = 25 ˚C
µA
–
–
–
–
0.2
200
Tj = 125 ˚C
Gate-source leakage current
IGSS
nA
V
GS = 20 V, VDS = 0
Drain-source on-resistance
GS = 0 V, ID = 0.03 A
–
–
10
100
3.5
RDS(on)
Ω
V
2.5
Dynamic Characteristics
Forward transconductance
gfs
S
V
DS ≥ 2 × ID × RDS(on)max, ID = 0.48 A
Input capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
GS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
GS = 0, VDS = 25 V, f = 1 MHz
0.4
–
0.75
500
40
–
Ciss
pF
V
670
60
C
oss
V
–
C
rss
V
–
–
–
12
7
20
10
30
Turn-on time ton, (ton = td(on) + tr)
VDD = 30 V, VGS = − 2 ... + 5 V, RGS = 50 Ω,
ID = 0.29 A
td(on)
tr
ns
20
Turn-off time toff, (toff = td(off) + tf)
VDD = 30 V, VGS = − 2 ... + 5 V, RGS = 50 Ω,
ID = 0.29 A
td(off)
tf
–
–
60
50
80
65
Semiconductor Group
2
BSP 149
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Continuous reverse drain current
IS
A
TA = 25 ˚C
–
–
–
–
0.48
1.44
1.2
Pulsed reverse drain current
TA = 25 ˚C
ISM
VSD
–
Diode forward on-voltage
IF = 0.96 A, VGS = 0
V
0.9
V
GS(th) Grouping
Symbol Limit Values Unit Test Condition
min.
max.
Range of VGS(th)
∆VGS(th)
–
0.15
V
–
1)
Threshold voltage selected in groups : VGS(th)
VD1 = 0.2 V;
VD2 = 3 V;
ID = 1 mA
P
R
S
T
U
V
W
– 0.95 – 0.80 V
– 1.08 – 0.93 V
– 1.21 – 1.06 V
– 1.34 – 1.19 V
– 1.47 – 1.32 V
– 1.60 – 1.45 V
– 1.73 – 1.58 V
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Package Outline
SOT-223
Dimensions in mm
Semiconductor Group
3
BSP 149
Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation Ptot = f (TA)
Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
R
DS(on) = f (ID)
parameter: VGS
Semiconductor Group
4
BSP 149
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ≥ 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ≥ 2 × ID × RDS(on)max., tp = 80 µs
Drain-source on-resistance
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
R
DS(on) = f (Tj)
parameter: ID = 0.03 A, VGS = 0 V, (spread)
Semiconductor Group
5
BSP 149
Gate threshold voltage VGS(th) = f (Tj)
Forward characteristics of reverse diode
parameter: VDS = 3 V, ID = 1 mA, (spread)
IF = f (VSD)
parameter: tp = 80 µs, Tj, (spread)
Drain current ID = f (TA)
parameter: VGS ≥ 3 V
Safe operating area ID = f (VDS)
parameter: D = 0, TC = 25 ˚C
Semiconductor Group
6
BSP 149
Drain-source breakdown voltage
(BR) DSS = b × V(BR)DSS (25 ˚C)
V
Semiconductor Group
7
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