BFG520W/X,115 [NXP]
BFG520W - NPN 9 GHz wideband transistor SOP 4-Pin;
| 型号： | BFG520W/X,115 |
| 厂家： | 
NXP |
| 描述： | BFG520W - NPN 9 GHz wideband transistor SOP 4-Pin 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Rev. 04 — 21 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
BFG520W
collector
BFG520W/X
collector
• High transition frequency
• Gold metallization ensures excellent reliability.
1
2
3
4
base
emitter
base
emitter
emitter
APPLICATIONS
emitter
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
handbook, halfpage
4
1
3
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
Top view
MBK523
MARKING
TYPE NUMBER
CODE
BFG520W
N3
N4
Fig.1 Simplified outline SOT343N.
BFG520W/X
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
open emitter
−
−
20
15
70
500
250
−
V
collector-emitter voltage RBE = 0
collector current (DC)
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
total power dissipation
DC current gain
Ts ≤ 85 °C
IC = 20 mA; VCE = 6 V
−
−
60
−
120
0.35
9
feedback capacitance
transition frequency
IC = 0; VCB = 6 V; f = 1 MHz
pF
fT
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C −
17
−
|S21|2
F
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16
17
−
dB
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
−
1.1
1.6
Rev. 04 - 21 November 2007
2 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCES
VEBO
IC
−
−
−
−
−
V
V
V
RBE = 0
15
open collector
2.5
70
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 85 °C; see Fig.2; note 1
500
+150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
Rev. 04 - 21 November 2007
3 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CES collector-emitter breakdown voltage IC = 10 µA; RBE = 0
V(BR)EBO emitter-base breakdown voltage
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC =10 µA; IE = 0
20
15
2.5
−
−
−
V
−
−
V
IE = 10 µA; IC = 0
−
−
V
ICBO
hFE
Cre
collector leakage current
DC current gain
VCB = 6 V; IE = 0
−
50
250
−
nA
IC = 20 mA; VCE = 6 V; see Fig.3
60
−
120
0.35
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.4
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C; see Fig.5
−
−
−
9
−
GHz
dB
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
11
−
IC = 20 mA; VCE = 6 V; f = 2 GHz;
−
dB
Tamb = 25 °C
|S21|2
F
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16
Tamb = 25 °C
17
1.1
1.6
1.85
17
−
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
−
−
−
1.6
2.1
−
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; f = 900 MHz;
−
dBm
RL = 50 Ω; Tamb = 25 °C
ITO
Vo
third order intercept point
output voltage
note 2
note 3
note 4
−
−
−
26
−
−
−
dBm
mV
dB
275
−50
d2
second order intermodulation
distortion
Notes
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero.GUM = 10 log
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz.
4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
Rev. 04 - 21 November 2007
4 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB807
MLB808
0.6
150
handbook, halfpage
handbook, halfpage
C
re
(pF)
h
FE
0.4
100
50
0
0.2
0
1
2
0
2.5
5
7.5
10
10
1
10
10
I
(mA)
V
(V)
C
CB
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLB809
12
handbook, halfpage
f
T
V
=
CE
(GHz)
6 V
8
3 V
4
0
2
1
10
10
I
(mA)
C
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
Rev. 04 - 21 November 2007
5 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB810
MLB811
30
30
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
G
G
MSG
max
UM
G
MSG
max
G
10
10
UM
0
0
0
10
20
30
40
0
10
20
30
40
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLB812
MLB813
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
G
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 5 mA; VCE = 6 V.
IC = 20 mA; VCE = 6 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
Rev. 04 - 21 November 2007
6 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB818
MLB819
30
30
handbook, halfpage
handbook, halfpage
d
2
(dB)
d
im
(dB)
40
50
60
70
40
50
60
70
0
0
10
20
30
40
10
20
30
40
I
(mA)
I
(mA)
C
C
Vo = 275 mV; fp + fq − fr = 793.25 MHz; VCE = 6 V;
RL = 75 Ω; Tamb = 25 °C.
Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V;
RL = 75 Ω Tamb = 25 °C.
Fig.10 Intermodulation distortion as a function
of collector current; typical values.
Fig.11 Second order intermodulation distortion as a
function of collector current; typical values.
MLB820
MLB821
20
4
handbook, halfpage
handbook, halfpage
G
F
(dB)
ass
f = 900 MHz
1000 MHz
(dB)
15
3
f = 2000 MHz
2000 MHz
2
10
5
1000 MHz
900 MHz
500 MHz
1
0
0
2
2
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
VCE = 6 V.
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of collector current; typical values.
Fig.13 Associated available gain as a function
of collector current; typical values.
Rev. 04 - 21 November 2007
7 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB822
MLB823
20
4
handbook, halfpage
handbook, halfpage
I
= 5 mA
20 mA
C
G
F
ass
(dB)
(dB)
15
3
2
10
5
I
=
C
20 mA
1
5 mA
0
10
0
10
2
3
4
2
3
4
10
10
10
10
f (MHz)
f (MHz)
VCE = 6 V.
VCE = 6 V.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
Fig.15 Associated available gain as a function
of frequency; typical values.
Rev. 04 - 21 November 2007
8 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
unstable
region
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
Γ
0.2
opt
5
F
= 1.1 dB
min
0.2
1
2
5
0.5
o
o
180
0
0
F = 1.5 dB
F = 2 dB
stability
circle
5
o
0.2
F = 3 dB
0.5
2
o
45
135
1
MLB824
1.0
o
90
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.16 Common emitter noise figure circles; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
(4)
0.2
5
(3)
1
(2)
0.2
2
5
0.5
o
o
180
0
0
(1)
(5)
5
0.2
(1) Γopt; Fmin = 1.85 dB.
(2) F = 2 dB.
(6)
(7)
(3) F = 2.5 dB.
(8)
(4) F = 3 dB.
0.5
2
o
o
(5) Γms; Gmax = 11.8 dB.
(6) G = 11 dB.
45
135
1
MLB825
(7) G = 10 dB.
1.0
o
(8) G = 9 dB.
90
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.17 Common emitter noise figure circles; typical values.
Rev. 04 - 21 November 2007
9 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
1
2
5
0.5
o
o
180
0
0
40 MHz
5
o
0.2
0.5
2
o
45
135
1
MLB814
1.0
o
90
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.18 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
40 MHz
40
3 GHz
o
o
180
0
50
30
20
10
o
o
135
45
o
MLB815
90
VCE = 6 V; IC = 20 mA.
Fig.19 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 21 November 2007
10 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
o
3 GHz
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MLB816
90
VCE = 6 V; IC = 20 mA.
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
1
2
5
0.5
o
o
180
0
0
40 MHz
3 GHz
5
0.2
0.5
2
o
o
45
135
1
MLB817
1.0
o
90
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.21 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 21 November 2007
11 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (1)
37 (1)
38
VJS
MJS
FC
750.0
0.000
0.780
1
IS
1.016
220.1
1.000
48.06
510
fA
−
−
−
2
BF
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
mA
fA
−
1. These parameters have not been extracted, the
default values are shown.
6
283
7
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
775.3
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.070
0.130
543.7
0.000
8
BR
−
9
NR
−
C
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
mA
aA
−
L
B
L1
L2
B
B'
C'
C
E'
RB
Ω
C
C
be
ce
IRB
RBM
RE
µA
Ω
L
E
MBC964
mΩ
Ω
L3
RC
XTB
EG
−
E
eV
−
XTI
CJE
VJE
MJE
TF
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
pF
mV
−
Fig.22 Package equivalent circuit SOT343N.
ps
−
List of components (see Fig.22)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
mA
deg
fF
mV
−
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
L3
−
LB
ps
F
LE
CJS
Rev. 04 - 21 November 2007
12 of 15
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
B
E
A
X
H
y
v M
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
1.15
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343N
97-05-21
Rev. 04 - 21 November 2007
13 of 15
BFG520W; BFG520W/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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Rev. 04 - 21 November 2007
14 of 15
BFG520W; BFG520W/X
NXP Semiconductors
NPN 9 GHz wideband transistors
Revision history
Revision history
Document ID
BFG520W_N_4
Modifications:
BFG520W_X_3
BFG520W_2
BFG520W_1
Release date
20071121
Data sheet status
Change notice
Supersedes
Product data sheet
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BFG520W_X_3
• Page 2; text in Pinning table changed
19981002
19950824
19940829
Product specification
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-
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BFG520W_2
BFG520W_1
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Product specification
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Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 November 2007
Document identifier: BFG520W_X_N_4
相关型号：
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