BFG540 [NXP]
NPN 9 GHz wideband transistor; NPN 9 GHz宽带晶体管型号: | BFG540 |
厂家: | NXP |
描述: | NPN 9 GHz wideband transistor |
文件: | 总16页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Product specification
2000 May 23
Supersedes data of 1997 Dec 03
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
FEATURES
PINNING
PIN
4
3
• High power gain
DESCRIPTION
• Low noise figure
BFG540 (Fig.1) Code: N37
• High transition frequency
1
2
3
4
collector
base
• Gold metallization ensures
excellent reliability.
1
2
emitter
emitter
Top view
MSB014
DESCRIPTION
Fig.1 SOT143B.
BFG540/X (Fig.1) Code: N43
NPN silicon planar epitaxial
1
2
3
4
collector
emitter
base
transistors, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optical systems.
3
4
emitter
BFG540/XR (Fig.2) Code: N49
1
2
3
4
collector
emitter
base
2
1
Top view
MSB035
The transistors are mounted in plastic
SOT143B and SOT143R packages.
emitter
Fig.2 SOT143R.
2000 May 23
2
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
−
−
20
15
120
400
250
−
V
RBE = 0
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
fT
Ts ≤ 60 °C; note 1
−
−
IC = 40 mA; VCE = 8 V; Tj = 25 °C
IC = 0; VCE = 8 V; f = 1 MHz
100
−
120
0.5
9
feedback capacitance
transition frequency
pF
IC = 40 mA; VCE = 8 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
−
−
18
−
dB
dB
dB
dB
dB
dB
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
11
−
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz; 15
amb = 25 °C
16
−
2
s21
T
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
−
−
1.3
1.9
2.1
1.8
2.4
−
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCES
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
RBE = 0
−
20
V
−
15
V
open collector
−
2.5
120
400
V
−
mA
mW
Ptot
Tstg
Tj
Ts ≤ 60 °C; note 1
−
−65
−
+150 °C
150
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
290
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 May 23
3
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 8 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Ce
collector cut-off current
DC current gain
−
−
50
250
−
nA
IC = 40 mA; VCE = 8 V
60
−
120
2
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
pF
Cc
−
0.9
0.5
9
−
pF
Cre
fT
−
−
pF
IC = 40 mA; VCE = 8 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz;
−
−
18
−
dB
dB
dB
dB
dB
dB
dBm
(note 1)
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
11
−
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz; 15
Tamb = 25 °C
16
−
2
s21
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
−
−
−
−
1.3
1.9
2.1
21
1.8
2.4
−
Γs = Γopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Γs = Γopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
ITO
VO
d2
third order intercept point
output voltage
note 2
note 3
note 4
−
−
−
34
−
−
−
dBm
mV
dB
500
−50
second order intermodulation
distortion
Notes
2
s21
--------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
dB.
2
(1 – s11 2)(1 – s22
)
2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz.
3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C;
Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p + q − r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2000 May 23
4
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MBG249
MRA749
600
250
handbook, halfpage
handbook, halfpage
h
P
FE
tot
(mW)
200
150
100
400
200
50
0
0
−2
−1
2
0
50
100
150
200
10
10
1
10
10
I
(mA)
o
C
T ( C)
s
VCE = 8 V; Tj = 25 °C.
VCE ≤ 10 V.
Fig.4 DC current gain as a function of collector
current.
Fig.3 Power derating curve.
MRA750
MRA751
12
1
handbook, halfpage
handbook, halfpage
C
re
(pF)
0.8
f
T
(GHz)
V
V
= 8 V
= 4 V
CE
CE
8
0.6
0.4
0.2
4
0
10
0
0
−1
2
1
10
10
4
8
12
I
(mA)
V
(V)
C
CB
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
Fig.6 Transition frequency as a function of
collector current.
2000 May 23
5
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MRA752
MRA753
25
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG
20
20
15
10
5
G
max
G
UM
15
10
5
G
max
G
UM
0
0
0
0
20
40
60
20
40
60
I
(mA)
I
(mA)
C
C
VCE = 8 V; f = 900 MHz.
VCE = 8 V; f = 2 GHz.
MSG = maximum stable gain; Gmax = maximum available gain;
GUM = maximum unilateral power gain.
Gmax = maximum available gain;
GUM = maximum unilateral power gain.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA755
MRA754
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
40
MSG
MSG
30
30
20
10
0
20
10
0
G
max
G
max
2
4
2
4
3
3
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 10 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
IC = 40 mA; VCE = 8 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available gain.
MSG = maximum stable gain; Gmax = maximum available gain.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
2000 May 23
6
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
MEA972
MEA973
−20
−20
handbook, halfpage
handbook, halfpage
d
d
2
im
(dB)
(dB)
−30
−30
−40
−50
−40
−50
−60
−60
−70
−70
10
20
30
40
50
60
(mA)
10
20
30
40
50
60
(mA)
I
I
C
C
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA760
MRA761
5
20
G
5
20
G
handbook, halfpage
handbook, halfpage
I
= 10 mA
40 mA
G
F
F
C
ass
ass
min
(dB)
min
(dB)
f = 900 MHz
1000 MHz
(dB)
(dB)
ass
15
15
4
4
G
F
ass
2000 MHz
10
5
10
5
3
2
1
3
2
2000 MHz
min
40 mA
10 mA
1000 MHz
900 MHz
500 MHz
F
min
0
0
1
0
0
1
−5
−5
2
4
2
3
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V.
VCE = 8 V.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
2000 May 23
7
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
1.0
0.8
0.6
0.4
0.2
1
135°
45°
2
0.5
0.2
5
F
= 1.3 dB
min
OPT
1
0.2
0.5
2
5
180°
0°
0
0
F = 1.5 dB
F = 2 dB
F = 3 dB
5
0.2
0.5
2
−45°
−135°
1
MRA762
1.0
−90°
IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz.
Fig.15 Noise circle figure.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
G = 8 dB
G = 9 dB
G
= 11.4 dB
MS
G = 10 dB
max
0
5
0.2
0.5
1
2
5
180°
0°
OPT
F
= 2.1 dB
min
F = 2.5 dB
F = 3 dB
5
0.2
F = 4 dB
0.5
2
−45°
−135°
1
MRA763
1.0
−90°
IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz.
Fig.16 Noise circle figure.
8
2000 May 23
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
1.0
0.8
0.6
0.4
0.2
1
135°
45°
2
0.5
3 GHz
0.2
5
0.2
0.5
1
2
5
180°
0°
0
0
5
0.2
40 MHz
2
0.5
−45°
−135°
1
MRA756
1.0
−90°
IC = 40 mA; VCE = 8 V; Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (s11).
90°
135°
45°
40 MHz
3 GHz
180°
0°
50
40
30
20
10
−135°
−45°
MRA757
−90°
IC = 40 mA; VCE = 8 V.
Fig.18 Common emitter forward transmission coefficient (s21).
9
2000 May 23
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.25 0.20 0.15 0.10 0.05
−135°
−45°
MRA758
−90°
IC = 40 mA; VCE = 8 V.
Fig.19 Common emitter reverse transmission coefficient (s12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
3 GHz
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRA759
1.0
−90°
IC = 40 mA; VCE = 8 V; Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (s22).
10
2000 May 23
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
2000 May 23
11
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
99-09-13
SOT143R
SC-61B
2000 May 23
12
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 May 23
13
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
NOTES
2000 May 23
14
Philips Semiconductors
Product specification
BFG540; BFG540/X;
BFG540/XR
NPN 9 GHz wideband transistor
NOTES
2000 May 23
15
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Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/04/pp16
Date of release: 2000 May 23
Document order number: 9397 750 07059
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