BFG520W_15 [JMNIC]
NPN 9 GHz wideband transistors;
| 型号： | BFG520W_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 9 GHz wideband transistors |
| 文件： | 总16页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
1998 Oct 02
Product specification
Supersedes data of August 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
BFG250W
collector
BFG250W/X
collector
• High transition frequency
• Gold metallization ensures excellent reliability.
1
2
3
4
base
emitter
base
emitter
emitter
APPLICATIONS
emitter
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
handbook, halfpage
4
1
3
2
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
Top view
MBK523
MARKING
TYPE NUMBER
CODE
BFG520W
N3
N4
Fig.1 Simplified outline SOT343N.
BFG520W/X
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
open emitter
−
−
20
15
70
500
250
−
V
collector-emitter voltage RBE = 0
collector current (DC)
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
total power dissipation
DC current gain
Ts ≤ 85 °C
IC = 20 mA; VCE = 6 V
−
−
60
−
120
0.35
9
feedback capacitance
transition frequency
IC = 0; VCB = 6 V; f = 1 MHz
pF
fT
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C −
17
−
|S21|2
F
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 16
17
−
dB
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz
−
1.1
1.6
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCES
VEBO
IC
−
−
−
−
−
V
V
V
RBE = 0
15
open collector
2.5
70
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 85 °C; see Fig.2; note 1
500
+150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CES collector-emitter breakdown voltage IC = 10 µA; RBE = 0
V(BR)EBO emitter-base breakdown voltage
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC =10 µA; IE = 0
20
15
2.5
−
−
−
V
−
−
V
IE = 10 µA; IC = 0
−
−
V
ICBO
hFE
Cre
collector leakage current
DC current gain
VCB = 6 V; IE = 0
−
50
250
−
nA
IC = 20 mA; VCE = 6 V; see Fig.3
60
−
120
0.35
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz;
see Fig.4
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C; see Fig.5
−
−
−
9
−
GHz
dB
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
11
−
IC = 20 mA; VCE = 6 V; f = 2 GHz;
−
dB
Tamb = 25 °C
|S21|2
F
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16
amb = 25 °C
17
1.1
1.6
1.85
17
−
dB
T
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz
−
−
−
−
1.6
2.1
−
dB
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz
dB
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; f = 900 MHz;
−
dBm
RL = 50 Ω; Tamb = 25 °C
ITO
Vo
third order intercept point
output voltage
note 2
note 3
note 4
−
−
−
26
−
−
−
dBm
mV
dB
275
−50
d2
second order intermodulation
distortion
Notes
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero.GUM = 10 log
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C;
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz.
3. dim = −60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB; RL = 75 Ω;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq − fr = 793.25 MHz.
4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 Ω; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB807
MLB808
0.6
150
handbook, halfpage
handbook, halfpage
C
re
(pF)
h
FE
0.4
100
50
0
0.2
0
1
2
0
2.5
5
7.5
10
10
1
10
10
I
(mA)
V
(V)
C
CB
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MLB809
12
handbook, halfpage
f
T
V
=
CE
(GHz)
6 V
8
3 V
4
0
2
1
10
10
I
(mA)
C
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB810
MLB811
30
30
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
G
G
MSG
max
UM
G
MSG
max
G
10
10
UM
0
0
0
10
20
30
40
0
10
20
30
40
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLB812
MLB813
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
G
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 5 mA; VCE = 6 V.
IC = 20 mA; VCE = 6 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB818
MLB819
30
30
handbook, halfpage
handbook, halfpage
d
2
(dB)
d
im
(dB)
40
50
60
70
40
50
60
70
0
0
10
20
30
40
10
20
30
40
I
(mA)
I
(mA)
C
C
Vo = 275 mV; fp + fq − fr = 793.25 MHz; VCE = 6 V;
RL = 75 Ω; Tamb = 25 °C.
Vo = 75 mV; fp + fq = 810 MHz; VCE = 6 V;
RL = 75 Ω Tamb = 25 °C.
Fig.10 Intermodulation distortion as a function
of collector current; typical values.
Fig.11 Second order intermodulation distortion as a
function of collector current; typical values.
MLB820
MLB821
20
4
handbook, halfpage
handbook, halfpage
G
F
(dB)
ass
f = 900 MHz
1000 MHz
(dB)
15
3
f = 2000 MHz
2000 MHz
2
10
5
1000 MHz
900 MHz
500 MHz
1
0
0
2
2
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
VCE = 6 V.
VCE = 6 V.
Fig.12 Minimum noise figure as a function
of collector current; typical values.
Fig.13 Associated available gain as a function
of collector current; typical values.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB822
MLB823
20
4
handbook, halfpage
handbook, halfpage
I
= 5 mA
20 mA
C
G
F
ass
(dB)
(dB)
15
3
2
10
5
I
=
C
20 mA
1
5 mA
0
10
0
10
2
3
4
2
3
4
10
10
10
10
f (MHz)
f (MHz)
VCE = 6 V.
VCE = 6 V.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
Fig.15 Associated available gain as a function
of frequency; typical values.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
unstable
region
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
Γ
0.2
opt
5
F
= 1.1 dB
min
0.2
1
2
5
0.5
o
o
180
0
0
F = 1.5 dB
F = 2 dB
stability
circle
5
o
0.2
F = 3 dB
0.5
2
o
45
135
1
MLB824
1.0
o
90
f = 900 MHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.16 Common emitter noise figure circles; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
(4)
0.2
5
(3)
1
(2)
0.2
2
5
0.5
o
o
180
0
0
(1)
(5)
5
0.2
(1) Γopt; Fmin = 1.85 dB.
(2) F = 2 dB.
(6)
(7)
(3) F = 2.5 dB.
(8)
(4) F = 3 dB.
0.5
2
o
o
(5) Γms; Gmax = 11.8 dB.
(6) G = 11 dB.
45
135
1
MLB825
(7) G = 10 dB.
1.0
o
(8) G = 9 dB.
90
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω.
Fig.17 Common emitter noise figure circles; typical values.
9
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
1
2
5
0.5
o
o
180
0
0
40 MHz
5
o
0.2
0.5
2
o
45
135
1
MLB814
1.0
o
90
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.18 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
40 MHz
40
3 GHz
o
o
180
0
50
30
20
10
o
o
135
45
o
MLB815
90
VCE = 6 V; IC = 20 mA.
Fig.19 Common emitter forward transmission coefficient (S21); typical values.
10
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
o
90
o
3 GHz
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MLB816
90
VCE = 6 V; IC = 20 mA.
Fig.20 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
1
2
5
0.5
o
o
180
0
0
40 MHz
3 GHz
5
0.2
0.5
2
o
o
45
135
1
MLB817
1.0
o
90
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig.21 Common emitter output reflection coefficient (S22); typical values.
11
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
SPICE parameters for the BFG520W die
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36 (1)
37 (1)
38
VJS
MJS
FC
750.0
0.000
0.780
1
IS
1.016
220.1
1.000
48.06
510
fA
−
−
−
2
BF
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
mA
fA
−
1. These parameters have not been extracted, the
default values are shown.
6
283
7
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
775.3
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.070
0.130
543.7
0.000
8
BR
−
9
NR
−
C
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
mA
aA
−
L
B
L1
L2
B
B'
C'
C
E'
RB
Ω
C
C
be
ce
IRB
RBM
RE
µA
Ω
L
E
MBC964
mΩ
Ω
L3
RC
XTB
EG
−
E
eV
−
XTI
CJE
VJE
MJE
TF
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
pF
mV
−
Fig.22 Package equivalent circuit SOT343N.
ps
−
List of components (see Fig.22)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
mA
deg
fF
mV
−
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
L3
−
LB
ps
F
LE
CJS
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT343N
D
B
E
A
X
H
y
v M
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
1.15
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343N
97-05-21
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
NOTES
1998 Oct 02
15
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Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Oct 02
Document order number: 9397 750 04464
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