BFG25A/X,215 [NXP]
BFG25A - NPN 5 GHz wideband transistor SOT-143 4-Pin;
| 型号： | BFG25A/X,215 |
| 厂家： | 
NXP |
| 描述： | BFG25A - NPN 5 GHz wideband transistor SOT-143 4-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG25A/X
NPN 5 GHz wideband transistor
Rev. 04 — 27 November 2007
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
FEATURES
DESCRIPTION
• Low current consumption
(100 µA to 1 mA)
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
4
3
• Low noise figure
• Gold metallization ensures
PINNING
excellent reliability.
1
2
PIN
1
DESCRIPTION
collector
APPLICATIONS
Top view
MSB014
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
2
emitter
base
3
Marking code: %MU.
4
emitter
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
VCEO
IC
−
−
−
−
−
−
−
−
8
V
5
V
6.5
32
200
−
mA
mW
Ptot
hFE
fT
Ts ≤ 165 °C
IC = 0.5 mA; VCE = 1 V
50
80
5
transition frequency
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Tamb = 25 °C
3.5
GHz
dB
GUM
F
maximum unilateral power gain IC = 0.5 mA; VCE = 1 V;
−
−
−
18
1.8
2
−
−
−
f = 1 GHz; Tamb = 25 °C
noise figure
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Γ = Γopt; Tamb = 25 °C
dB
IC = 1 mA; VCE = 1 V; f = 1 GHz;
dB
Γ = Γopt; Tamb = 25 °C
Rev. 04 - 27 November 2007
2 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
8
5
2
V
V
V
open base
open collector
6.5
32
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 165 °C; note 1
−65
150
175
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
320
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cre
fT
−
−
50
200
0.3
−
µA
IC = 0.5 mA; VCE = 1 V
50
−
80
0.21
5
feedback capacitance
transition frequency
IC = ic = 0; VCB = 1 V; f = 1 MHz
pF
IC = 1 mA; VCE = 1 V;
3.5
GHz
Tamb = 25 °C; f = 500 MHz
GUM
F
maximum unilateral power gain IC = 0.5 mA; VCE = 1 V;
−
−
−
18
1.8
2
−
−
−
dB
dB
dB
(note 1)
f = 1 GHz; Tamb = 25 °C
noise figure
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
Note
2
S21
2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB
2
--------------------------------------------------------------
1 – S11
1 – S22
Rev. 04 - 27 November 2007
3 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD138
MRC038 - 1
100
40
handbook, halfpage
handbook, halfpage
h
P
FE
tot
(mW)
80
60
40
20
0
30
20
10
0
3
2
1
10
10
10
1
10
0
50
100
150
200
I
(mA)
o
( C)
C
T
s
VCE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MCD140
MCD139
6
0.3
handbook, halfpage
handbook, halfpage
f
C
re
(pF)
T
(GHz)
4
0.2
2
0
0.1
0
0
1
2
3
4
0
2
4
6
V
(V)
I
(mA)
CB
C
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
IC = ic = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
Rev. 04 - 27 November 2007
4 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD141
MCD142
30
20
handbook, halfpage
handbook, halfpage
gain
(dB)
G
UM
gain
(dB)
G
UM
15
10
5
20
MSG
MSG
10
0
0
0
0
0.5
1.0
1.5
2.0
I
2.5
(mA)
0.5
1.0
1.5
2.0
2.5
(mA)
I
C
C
VCE = 1 V; f = 500 MHz.
VCE = 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MCD143
MCD144
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
30
20
10
0
40
30
20
10
0
G
G
UM
UM
MSG
MSG
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 0.5 mA; VCE = 1 V.
IC = 1 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
Rev. 04 - 27 November 2007
5 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD145
MCD146
4
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
I
= 2 mA
C
f = 2 GHz
3
3
2
1
0
1 GHz
500 MHz
1 mA
2
1
0.5 mA
0
10
−1
2
4
3
1
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 1 V.
VCE = 1 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
1
0.5
2
6 dB
4 dB
0.2
stability
circle
5
2.5 dB
10
10
+
j
0.2
0.5
1
2
5
10
*
0
∞
OPT
= 1.9 dB
MSG
15.6 dB
F
– j
min
5
0.2
14 dB
2
0.5
MCD147
1
IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4.
Fig.12 Common emitter noise figure circles; typical values.
Rev. 04 - 27 November 2007
6 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
0.5
2
stability
circle
6 dB
4 dB
3 dB
OPT
0.2
F
= 2 dB
min
5
10
*
+
j
0.2
0.5
MSG
12.4 dB
1
2
5
10
0
∞
– j
10
11 dB
9 dB
5
0.2
2
0.5
MCD148
1
IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6.
Fig.13 Common emitter noise figure circles; typical values.
1
stability
circle
0.5
2
OPT
F
= 2.4 dB
min
6 dB
4 dB
*
0.2
3 dB
5
10
+ j
– j
0.2
0.5
1
2
5
10
MSG
9 dB
0
∞
10
7.5 dB
6 dB
5
0.2
2
0.5
MCD149
1
IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9.
Fig.14 Common emitter noise figure circles; typical values.
Rev. 04 - 27 November 2007
7 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
40 MHz
– j
10
3 GHz
5
0.2
2
0.5
MCD150
1
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
45
135
3 GHz
1
o
0
o
180
40 MHz
2
3
4
5
_
o
_
o
45
135
_
o
MCD151
90
IC = 1 mA; VCE = 1 V.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
Rev. 04 - 27 November 2007
8 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
o
90
o
o
45
135
3 GHz
0.5
0.4
0.3
0.2
0.1
o
o
0
180
40 MHz
_
o
_
o
45
135
_
o
90
MCD153
IC = 1 mA; VCE = 1 V.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
40 MHz
10
5
0.2
3 GHz
2
0.5
MCD152
1
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
Rev. 04 - 27 November 2007
9 of 12
NXP Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
Rev. 04 - 27 November 2007
10 of 12
BFG25A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
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Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 27 November 2007
11 of 12
BFG25A/X
NXP Semiconductors
NPN 5 GHz wideband transistor
Revision history
Revision history
Document ID
BFG25AX_N_4
Modifications:
Release date
20071127
Data sheet status
Change notice
Supersedes
Product data sheet
-
BFG25AX_3
• Fig. 1 on page 2; Figure note changed
BFG25AX_3
19971029
Product specification
-
BFG25AX_2
(9397 750 02767)
BFG25AX_2
BFG25AX_1
19950901
19921101
Product specification
Product specification
-
-
BFG25AX_1
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 November 2007
Document identifier: BFG25AX_N_4
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