BFG25AW/X [NXP]
NPN 5 GHz wideband transistors; NPN 5 GHz宽带晶体管型号: | BFG25AW/X |
厂家: | NXP |
描述: | NPN 5 GHz wideband transistors |
文件: | 总16页 (文件大小:147K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
book, halfpage
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
1998 Sep 23
Product specification
Supersedes data of August 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
FEATURES
PINNING
• Low current consumption
(100 µA to 1 mA)
PIN
DESCRIPTION
page
4
3
2
BFG25AW
• Low noise figure
1
2
3
4
collector
base
• Gold metallization ensures
excellent reliability.
1
emitter
emitter
Top view
MBK523
APPLICATIONS
BFG25AW/X
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
Fig.1 SOT343N.
1
2
3
4
collector
emitter
base
MARKING
DESCRIPTION
emitter
TYPE NUMBER
CODE
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
BFG25AW
N6
V1
BFG25AW/X
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
open emitter
−
−
8
V
collector-emitter voltage open base
collector current (DC)
−
−
5
V
−
−
6.5
500
200
0.3
−
mA
mW
Ptot
hFE
Cre
total power dissipation
DC current gain
Ts ≤ 85 °C
−
−
IC = 0.5 mA; VCE = 1 V
50
−
80
0.2
5
feedback capacitance
transition frequency
IC = 0; VCE = 1 V; f = 1 MHz
pF
fT
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5
GHz
dB
GUM
maximum unilateral
power gain
IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C
−
16
−
F
noise figure
Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz
−
2
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
−
−
−
−
8
V
V
V
5
2
open collector
6.5
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 85 °C; see Fig.2; note 1
500
+150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
180
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
IC = 100 µA; IE = 0
−
−
8
V
−
−
5
V
V(BR)EBO emitter-base breakdown voltage
IE = 100 µA; IC = 0
−
−
2
V
ICBO
hFE
Cre
fT
collector leakage current
DC current gain
open emitter; VCB = 5 V; IE = 0
IC = 0.5 mA; VCE = 1 V
IC = 0; VCE = 1 V; f = 1 MHz
−
−
50
200
0.3
−
nA
50
−
80
0.2
5
feedback capacitance
transition frequency
pF
IC = 1 mA; VCE = 1 V; f = 1 GHz;
3.5
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain;
note 1
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
−
−
−
16
8
−
−
−
dB
dB
dB
dB
IC = 0.5 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 °C
F
noise figure
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz
1.9
2
Γs = Γopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz
Note
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM = 10 log
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MBG248
MCD138
100
600
handbook, halfpage
handbook, halfpage
h
FE
P
tot
80
60
40
20
0
(mW)
400
200
0
3
2
1
0
50
100
150
200
10
10
10
1
10
o
I
(mA)
T
( C)
C
s
VCE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLB972
MLB971
6
0.3
handbook, halfpage
handbook, halfpage
C
f
re
T
(pF)
(GHz)
0.2
4
2
0
0.1
0
0
2
4
6
0
1
4
2
3
I
(mA)
V
(V)
C
CE
IC = 0; f = 1 MHz.
f = 500 MHz; VCE = 1 V; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Sep 23
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MLB973
MLB974
30
30
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
20
20
10
MSG
G
UM
MSG
10
0
0
0
0
1
1
2
2
3
3
I
(mA)
I
(mA)
C
C
f = 500 MHz; VCE = 1 V.
f = 1 GHz; VCE = 1 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MLB975
MLB976
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
30
20
10
0
40
30
20
10
0
G
G
UM
UM
MSG
MSG
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 0.5 mA; VCE = 1 V.
IC = 1 mA; VCE = 1 V.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1998 Sep 23
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MCD145
MCD146
4
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
I
= 2 mA
C
f = 2 GHz
3
3
2
1
0
1 GHz
500 MHz
1 mA
2
1
0.5 mA
0
10
−1
2
4
3
1
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 1 V.
VCE = 1 V.
Fig.10 Minimum noise figure as a function
of collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
F
= 1.9 dB
min
0.2
0.5
1
2
5
o
Γ
o
opt
5
180
0
0
F = 3 dB
F = 4 dB
F = 5 dB
0.2
0.5
2
o
o
45
135
1
MLB977
1.0
o
90
f = 500 MHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
6
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
stability
circle
0.2
5
F
= 2.0 dB
min
Γ
opt
0.2
0.5
1
2
5
o
o
180
0
0
F = 3 dB
F = 4 dB
F = 5 dB
5
0.2
0.5
2
o
o
45
135
1
MLB978
1.0
o
90
f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
o
90
stability
circle
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
F = 5 dB
F = 4 dB
F = 3 dB
Γ
opt
= 2.4 dB
F
0.2
5
min
2
unstable
region
0.2
0.5
1
5
o
o
180
0
0
5
0.2
0.5
2
o
o
45
135
1
MLB979
1.0
o
90
f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
7
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
3 GHz
5
0.2
0.5
2
o
o
45
135
1
MLB980
1.0
o
90
VCE = 1 V; IC = 1 mA; Zo = 50 Ω..
Fig.15 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
135
45
3 GHz
40 MHz
2
o
o
180
0
5
4
3
1
o
o
135
45
o
MLB981
90
VCE = 1 V; IC = 1 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
8
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
o
90
o
o
135
45
3 GHz
0.5
0.4
0.3
0.2
0.1
40 MHz
o
o
180
0
o
o
135
45
o
MLB982
90
VCE = 1 V; IC = 1 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
3 GHz
0.5
2
o
o
45
135
1
MLB983
1.0
o
90
VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
9
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
SPICE parameters for the BFG25W crystal
SEQUENCE No. PARAMETER VALUE
UNIT
mV
SEQUENCE No. PARAMETER VALUE
UNIT
36(1)
37(1)
38
VJS
MJS
FC
750.0
0.000
0.988
1
IS
13.77
85.65
0.980
50.80
10.00
2.199
1.857
16.97
0.986
2.491
188.0
205.1
1.107
80.00
1.000
80.00
7.911
5.300
0.000
1.110
3.000
223.0
669.7
0.060
5.112
7.909
1.338
5.662
15.37
229.0
394.7
0.043
0.050
13.26
0.000
aA
−
−
−
2
BF
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
A
1. These parameters have not been extracted, the
default values are shown.
6
fA
−
7
8
BR
−
C
9
NR
−
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
VAR
IKR
ISC
NC
V
mA
aA
−
L
B
L1
L2
B
B'
C'
C
E'
C
C
RB
Ω
be
ce
IRB
RBM
RE
µA
Ω
L
E
MBC964
Ω
L3
RC
Ω
XTB
EG
−
E
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
XTI
CJE
VJE
MJE
TF
fF
mV
−
Fig.19 Package equivalent circuit SOT343N.
ps
−
List of components (see Fig.19)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
70
fF
mA
deg
fF
mV
−
50
fF
PTF
CJC
VJC
MJC
XCJC
TR
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
L3
−
LB
ns
F
LE
CJS
1998 Sep 23
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT343N
D
B
E
A
X
H
y
v M
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B
L
p
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
1.15
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343N
97-05-21
1998 Sep 23
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Sep 23
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
15
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Date of release: 1998 Sep 23
Document order number: 9397 750 04352
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