BFG25AX [NXP]
NPN 5 GHz wideband transistor; NPN 5 GHz宽带晶体管型号: | BFG25AX |
厂家: | NXP |
描述: | NPN 5 GHz wideband transistor |
文件: | 总12页 (文件大小:101K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG25A/X
NPN 5 GHz wideband transistor
1997 Oct 29
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
FEATURES
DESCRIPTION
• Low current consumption
(100 µA to 1 mA)
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
4
3
• Low noise figure
• Gold metallization ensures
PINNING
excellent reliability.
1
2
PIN
1
DESCRIPTION
collector
APPLICATIONS
Top view
MSB014
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
2
emitter
base
3
Marking code: V11.
4
emitter
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
VCEO
IC
−
−
−
−
−
−
−
−
8
V
5
V
6.5
32
200
−
mA
mW
Ptot
hFE
fT
Ts ≤ 165 °C
IC = 0.5 mA; VCE = 1 V
50
80
5
transition frequency
IC = 1 mA; VCE = 1 V;
f = 500 MHz; Tamb = 25 °C
3.5
GHz
dB
GUM
F
maximum unilateral power gain IC = 0.5 mA; VCE = 1 V;
−
−
−
18
1.8
2
−
−
−
f = 1 GHz; Tamb = 25 °C
noise figure
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Γ = Γopt; Tamb = 25 °C
dB
IC = 1 mA; VCE = 1 V; f = 1 GHz;
dB
Γ = Γopt; Tamb = 25 °C
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
8
5
2
V
V
V
open base
open collector
6.5
32
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 165 °C; note 1
−65
150
175
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
320
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cre
fT
−
−
50
200
0.3
−
µA
IC = 0.5 mA; VCE = 1 V
50
−
80
0.21
5
feedback capacitance
transition frequency
IC = ic = 0; VCB = 1 V; f = 1 MHz
pF
IC = 1 mA; VCE = 1 V;
3.5
GHz
Tamb = 25 °C; f = 500 MHz
GUM
F
maximum unilateral power gain IC = 0.5 mA; VCE = 1 V;
−
−
−
18
1.8
2
−
−
−
dB
dB
dB
(note 1)
f = 1 GHz; Tamb = 25 °C
noise figure
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Γ = Γopt; Tamb = 25 °C
Note
2
S21
2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB
2
--------------------------------------------------------------
1 – S11
1 – S22
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD138
MRC038 - 1
100
40
handbook, halfpage
handbook, halfpage
h
P
FE
tot
(mW)
80
60
40
20
0
30
20
10
0
3
2
1
10
10
10
1
10
0
50
100
150
200
I
(mA)
o
( C)
C
T
s
VCE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MCD140
MCD139
6
0.3
handbook, halfpage
handbook, halfpage
f
C
re
(pF)
T
(GHz)
4
0.2
2
0
0.1
0
0
1
2
3
4
0
2
4
6
V
(V)
I
(mA)
CB
C
VCE = 1 V; f = 500 MHz; Tamb = 25 °C.
IC = ic = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5 Transition frequency as a function of
collector current; typical values.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD141
MCD142
30
20
handbook, halfpage
handbook, halfpage
gain
(dB)
G
UM
gain
(dB)
G
UM
15
10
5
20
MSG
MSG
10
0
0
0
0
0.5
1.0
1.5
2.0
I
2.5
(mA)
0.5
1.0
1.5
2.0
2.5
(mA)
I
C
C
VCE = 1 V; f = 500 MHz.
VCE = 1 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MCD143
MCD144
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
30
20
10
0
40
30
20
10
0
G
G
UM
UM
MSG
MSG
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 0.5 mA; VCE = 1 V.
IC = 1 mA; VCE = 1 V.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
GUM = maximum unilateral power gain;
MSG = maximum stable gain.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
MCD145
MCD146
4
4
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
I
= 2 mA
C
f = 2 GHz
3
3
2
1
0
1 GHz
500 MHz
1 mA
2
1
0.5 mA
0
10
−1
2
4
3
1
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 1 V.
VCE = 1 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
1
0.5
2
6 dB
4 dB
0.2
stability
circle
5
2.5 dB
10
10
+
j
0.2
0.5
1
2
5
10
*
0
∞
OPT
= 1.9 dB
MSG
15.6 dB
F
– j
min
5
0.2
14 dB
2
0.5
MCD147
1
IC = 1 mA; VCE = 1 V; f = 500 MHz; ZO = 50 Ω; Maximum stable gain = 15.6 dB; Fmin = 1.9 dB; Γopt = 0.85, 5°; Rn/50 = 2.4.
Fig.12 Common emitter noise figure circles; typical values.
1997 Oct 29
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
0.5
2
stability
circle
6 dB
4 dB
3 dB
OPT
0.2
F
= 2 dB
min
5
10
*
+
j
0.2
0.5
MSG
12.4 dB
1
2
5
10
0
∞
– j
10
11 dB
9 dB
5
0.2
2
0.5
MCD148
1
IC = 1 mA; VCE = 1 V; f = 1000 MHz; ZO = 50 Ω; Maximum stable gain = 12.4 dB; Fmin = 2 dB; Γopt = 0.78, 14°; Rn/50 = 2.6.
Fig.13 Common emitter noise figure circles; typical values.
1
stability
circle
0.5
2
OPT
F
= 2.4 dB
min
6 dB
4 dB
*
0.2
3 dB
5
10
+ j
– j
0.2
0.5
1
2
5
10
MSG
9 dB
0
∞
10
7.5 dB
6 dB
5
0.2
2
0.5
MCD149
1
IC = 1 mA; VCE = 1 V; f = 2000 MHz; ZO = 50 Ω; Maximum stable gain = 8.9 dB; Fmin = 2.4 dB; Γopt = 0.72, 38°; Rn/50 = 1.9.
Fig.14 Common emitter noise figure circles; typical values.
1997 Oct 29
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
40 MHz
– j
10
3 GHz
5
0.2
2
0.5
MCD150
1
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11); typical values.
o
90
o
o
45
135
3 GHz
1
o
0
o
180
40 MHz
2
3
4
5
_
o
_
o
45
135
_
o
MCD151
90
IC = 1 mA; VCE = 1 V.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
8
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
o
90
o
o
45
135
3 GHz
0.5
0.4
0.3
0.2
0.1
o
o
0
180
40 MHz
_
o
_
o
45
135
_
o
90
MCD153
IC = 1 mA; VCE = 1 V.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
40 MHz
10
5
0.2
3 GHz
2
0.5
MCD152
1
IC = 1 mA; VCE = 1 V; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
9
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1997 Oct 29
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG25A/X
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29
11
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© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
127127/00/03/pp12
Date of release: 1997 Oct 29
Document order number: 9397 750 02767
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