BFG11W [NXP]
NPN 2 GHz power transistor; NPN 2 GHz的功率晶体管
| 型号： | BFG11W |
| 厂家： | 
NXP |
| 描述： | NPN 2 GHz power transistor |
| 文件： | 总12页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11W/X
NPN 2 GHz power transistor
1996 Jun 04
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
FEATURES
PINNING - SOT343
PIN
• High power gain
DESCRIPTION
• High efficiency
1
2
3
4
collector
emitter
base
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability
• Linear and non-linear operation.
emitter
APPLICATIONS
handbook, halfpage
4
3
2
• Common emitter class-AB operation in handheld radio
equipment at 1.9 GHz such as DECT, PHS.
• Driver for DCS 1800.
1
DESCRIPTION
Top view
MBK523
NPN silicon planar epitaxial transistor encapsulated in a
plastic 4-pin dual-emitter SOT343 package.
Marking code: S4
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common-emitter test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, δ < 1 : 2; tp = 5 ms
1.9
3.6
400
≥6
≥60
1996 Jun 04
2
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
20
V
V
V
open base
8
open collector
2.5
500
760
+150
175
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 60 °C; note 1
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
VALUE
150
UNIT
K/W
Rth j-s
up to Ts = 60 °C;
P
tot = 760 mW; note 1
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector tab.
MGD411
3
10
Z
th j-s
(K/W)
δ =
1
0.75
2
10
0.5
0.33
0.2
0.1
0.05
t
0.02
0.01
0.1
p
10
P
=
δ
T
t
t
p
T
1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
t
(s)
1
p
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1996 Jun 04
3
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 0.1 mA; open emitter
IC = 10 mA; open base
MIN.
MAX. UNIT
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage
V(BR)EBO emitter-base breakdown voltage
20
8
−
V
−
V
IE = 0.1 mA; open collector
VCE = 8 V; VBE = 0
2.5
−
−
V
ICES
hFE
Cc
collector cut-off current
DC current gain
100
−
µA
VCE = 5 V; IC = 100 mA
25
−
collector capacitance
feedback capacitance
VCB = 3.6 V; IE = ie = 0; f = 1 MHz
VCE = 3.6 V; IC = 0; f = 1 MHz
5
pF
pF
Cre
−
4
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common-emitter test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, δ < 1 : 2; tp = 5 ms
1.9
3.6
1
400
≥6
≥60
Ruggedness in class-AB operation
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions at f = 1.9 GHz: tp = 1.25 ms, δ = 1 : 8 at VCE = 7 V and tp = 5 ms, δ = 1 : 2 at
VCE = 4.5 V.
MGD412
MGD552
8
90
0
80
handbook, halfpage
handbook, halfpage
d
η
η
G
p
(dB)
im
c
C
G
p
(dBc)
(%)
(%)
6
70
−20
60
η
C
d
im
4
2
50
30
10
40
20
0
−40
−60
η
c
0
0
−80
200
400
600
800
(mW)
0
10
20
30
P
P
(dBm)
L
o(av)
VCE = 3.6 V; Icϕ = 1 mA; f1 = 1990.0 MHz;
f2 = 1990.1 MHz; δ = 1 : 8; tp = 625 µs.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; δ < 1 : 8; tp = 1.25 ms.
Fig.4 Two tone intermodulation distortion
Fig.3 Power gain and efficiency as functions
of load power; typical values.
and efficiency as functions of average
output power; typical values.
1996 Jun 04
4
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
List of components used in test circuit (see Figs 5 and 6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE N0.
C1, C8, C9, C10
C2, C3
multilayer ceramic chip capacitor; note 1 24 pF
multilayer ceramic chip capacitor; note 1 2 pF
multilayer ceramic chip capacitor; note 1 1.2 pF
multilayer ceramic chip capacitor; note 1 0.2 pF
multilayer ceramic chip capacitor; note 1 1.3 pF
multilayer ceramic chip capacitor; note 1 10 nF
C4
C5
C6, C7,
C11, C12, C13
C14, C15
L1
electrolytic capacitor
stripline; note 2
470 µF; 10 V
2222 032 14152
length 22.5 mm
width 0.9 mm
L2
L3
L4
L5
L6
L7
L8
L9
L10
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 6 mm
width 0.9 mm
length 1 mm
width 0.9 mm
length 2.5 mm
width 0.9 mm
length 4.5 mm
width 0.9 mm
length 24.5 mm
width 0.9 mm
length 20 mm
width 0.9 mm
length 10.5 mm
width 0.9 mm
length 4.4 mm
width 0.4 mm
length 19.7 mm
width 0.4 mm
L11, L12
R1
RF choke
1 µH
4330 030 36301
metal film resistor
metal film resistor
metal film resistor
bias transistor
78.7 Ω; 0.4 W
38.3 Ω; 0.4 W
10 Ω; 0.4 W
BC548; note 3
R2
R3
T1
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric εr = 6.15;
tan δ = 0.0019; thickness = 0.64 mm; copper cladding = 35 µm.
3. Or equivalent (VBE = 0.65 V at Tamb = 25 °C).
1996 Jun 04
5
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
R1
V
V
S
bias
R2
T1
C14
C15
C13
C12
L11
L12
L9
R3
C11
L10
C10
C9
L3
L7
L8
L5
DUT
L4
L1
L2
L6
C8
C1
50 Ω
50 Ω
input
output
C2, C3
C6, C7
C4
C5
MGD413
Fig.5 Common-emitter test circuit for class-AB operation at 1.9 GHz.
1996 Jun 04
6
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
60
Base
Collector
70
V
R1
bias
T1
R2
L11
R3
C11
L10
C14
C15
C13
C12
L9
C9
L12
+ V
s
L7
C10
L8
C4
C5
C2
C3
C1
C6
C7
C8
MGD414
Base
Collector
L1
L2
L3 L4 L5
L6
Dimensions in mm.
Fig.6 Component layout for common-emitter test circuit.
7
1996 Jun 04
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
MGD415
MGD416
12
20
handbook, halfpage
handbook, halfpage
Z
i
Z
L
(Ω)
R
L
(Ω)
16
10
x
i
8
6
4
2
12
8
r
i
4
X
L
0
1800
0
1800
1850
1900
1950
2000
1850
1900
1950
2000
f (MHz)
f (MHz)
VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW.
VCE = 3.6 V; VBE = 0.65 V; PL = 400 mW.
Fig.7 Input impedance as a function of frequency
(series components), typical values.
Fig.8 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Z
i
Z
MBA451
L
Fig.9 Definition of transistor impedance.
1996 Jun 04
8
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
PACKAGE OUTLINE
1.00
max
0.4
0.2
0.2
A
0.2
B
M
M
0.1
max
0.2
4
3
A
2.2
2.0
1.35
1.15
0.3
0.1
1
2
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB374
Dimensions in mm.
Fig.10 SOT343.
1996 Jun 04
9
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 04
10
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
NOTES
1996 Jun 04
11
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© Philips Electronics N.V. 1996
SCA49
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127101/1200/02/pp12
Date of release: 1996 Jun 04
Document order number: 9397 750 00883
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