BFG135A [INFINEON]
NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications); NPN硅RF晶体管（对于低失真宽带输出级放大器的天线和电信）
| 型号： | BFG135A |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG 135A
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
70mA to 130mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• f = 6 GHz
T
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 135A BFG135A Q62702-F1322
1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter
Symbol
Values
15
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CEO
V
CES
V
CBO
V
EBO
V
25
25
2
I
I
150
20
mA
mW
°C
C
Base current
B
Total power dissipation
P
tot
≤
T
100 °C
1000
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
thJS
50
K/W
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Dec-16-1996
BFG 135A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
15
-
-
C
B
Collector-emitter cutoff current
= 25 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
CE
-
-
100
50
1
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
CB
-
-
E
Emitter-base cutoff current
= 1 V, I = 0
EBO
V
EB
-
-
C
DC current gain
I = 100 mA, V = 8 V
h
FE
80
120
250
C
CE
Semiconductor Group
2
Dec-16-1996
BFG 135A
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 100 mA, V = 8 V, f = 200 MHz
4.5
6
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
CB
-
-
-
1.3
0.8
7.5
1.8
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
CE
-
-
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Noise figure
dB
I = 30 mA, V = 8 V, Z = Z
C
CE
S
Sopt
f = 900 MHz
-
-
2
-
-
f = 1.8 GHz
Power gain
3.7
2)
G
ma
I = 100 mA, V = 8 V, Z = Z
Sopt
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
14
9
-
-
2
Transducer gain
|S |
21e
I = 100 mA, V = 8 V, Z =Z = 50 Ω
C
CE
S
L
f = 900 MHz
-
-
10
4
-
-
f = 1.8 GHz
Third order intercept point
I = 100 mA, V = 8 V, f = 900 MHz
IP
dBm
3
C
CE
Ω
Z =Z = 50
-
38
-
S
L
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Dec-16-1996
BFG 135A
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
1200
mW
1000
Ptot
900
TS
800
TA
700
600
500
400
300
200
100
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC
p
10 2
10 2
R
Ptotmax/PtotDC
-
thJSK/W
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
4
Dec-16-1996
BFG 135A
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
V
BE
= v = 0, f = 1MHz
be
V
= Parameter
CE
4.0
pF
7.0
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10V
5V
3V
Ccb
fT
3.0
2.5
2.0
1.5
1.0
2V
1V
0.7V
0.5
0.0
0.5
0.0
0
4
8
12
16
V
VR
22
0
20 40 60 80 100 120 140 mA 170
IC
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
16
dB
12
10
8
11
dB
9
10V
5V
G
G
10V
3V
2V
5V
3V
2V
8
7
6
1V
5
6
4
1V
3
0.7V
4
2
2
0
1
0
0.7V
0
20 40 60 80 100 120 140 mA 170
IC
0
20 40 60 80 100 120 140 mA 170
IC
Semiconductor Group
5
Dec-16-1996
BFG 135A
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
3 C
ma
ms
CE
2
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
Ω
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
45
15
IC=100mA
0.9GHz
dB
13
12
11
10
9
dBm
35
10V 8V
G
IP3
0.9GHz
1.8GHz
5V
3V
30
8
7
25
2V
6
5
20
4
3
1V
15
2
1
0
10
0
2
4
6
8
V
12
0
20
40
60
80 100 120 mA 160
IC
VCE
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
21
ma
ms
V
= Parameter
V
= Parameter
CE
CE
30
30
IC=100mA
IC=100mA
dB
20
15
10
5
dB
20
15
10
G
S21
10V
2V
10V
0.7
1V
2V
5
0
0
1V
0.7V
-5
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
0.0
0.5
1.0
1.5
2.0
GHz
f
3.0
Semiconductor Group
6
Dec-16-1996
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