BFG11W/X-T [NXP]
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BFG11W/X-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 晶体 晶体管 |
| 文件： | 总12页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X
NPN 2 GHz RF power transistor
1995 Apr 07
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
FEATURES
DESCRIPTION
• High power gain
NPN silicon planar epitaxial transistors encapsulated in a
plastic, 4-pin dual-emitter SOT143 package.
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability.
MARKING
TYPE NUMBER
BFG11
BFG11/X
CODE
N72
N73
APPLICATIONS
• Common emitter class-AB operation in hand-held radio
equipment at 1.9 GHz.
PINNING
PIN
DESCRIPTION
4
3
BFG11 (see Fig.1)
1
2
3
4
collector
base
1
2
emitter
emitter
Top view
MSB014
BFG11/X (see Fig.1)
1
2
3
4
collector
emitter
base
Fig.1 SOT143.
emitter
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
400
≥4
≥50
1995 Apr 07
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
open base
8
open collector
2.5
500
500
400
+150
175
mA
mA
mW
°C
IC(AV)
Ptot
up to Ts = 60 °C; note 1; see Fig.2
Tstg
Tj
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
up to Ts = 60 °C; note 1;
290
Ptot = 400 mW
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MLC818
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
1995 Apr 07
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 0.1 mA; IE = 0
−
−
−
V
V
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA; IB = 0
8
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA; IC = 0 2.5
ICES
hFE
Cc
collector cut-off current
DC current gain
VCE = 8 V; VBE = 0
−
100
−
µA
IC = 100 mA; VCE = 5 V
25
−
collector capacitance
feedback capacitance
IE = ie = 0; VCB = 3.6 V; f = 1 MHz
IC = 0; VCE = 3.6 V; f = 1 MHz
4
pF
pF
Cre
−
3
MLC848
4
handbook, halfpage
C
c
(pF)
3
2
1
0
0
2
4
6
8
10
(V)
V
CB
IC = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
1995 Apr 07
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
≥4
≥50
Pulsed, class-AB, duty cycle < 1 : 8
1.9
3.6
1
400
typ. 5
typ. 70
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC849
MLC850
8
100
η
800
handbook, halfpage
handbook, halfpage
G
c
p
P
L
(mW)
(%)
(dB)
6
η
c
80
60
40
20
600
G
p
4
2
400
200
0
0
0
0
200
400
600
800
100
200
300
P
(mW)
D
P
(mW)
L
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 400 mW.
Fig.4 Power gain and collector efficiency as
functions of load power; typical values.
Fig.5 Load power as a function of drive power;
typical values.
1995 Apr 07
5
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
SPICE parameters for the BFG11 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
SEQUENCE No. PARAMETER VALUE
UNIT
mV
1
IS
3.338
97.14
0.988
31.40
51.45
23.53
2.386
13.73
0.989
2.448
100.0
54.10
1.224
1.740
1.000
1.740
59.65
0.124
0.000
1.110
3.000
9.555
0.600
0.315
12.96
400.0
0.866
5.940
0.000
4.274
0.650
0.392
0.150
0.000
0.000
fA
−
36(1)
37(1)
38
VJS
MJS
FC
750.0
0.000
0.742
2
BF
−
−
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
A
1. These parameters have not been extracted, the
default values are shown.
6
pA
−
7
8
BR
−
9
NR
−
C
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34(1)
35(1)
VAR
IKR
ISC
NC
V
A
L
B
L1
L2
fA
−
B
B'
C'
C
E'
C
C
RB
Ω
µA
Ω
mΩ
Ω
−
be
ce
IRB
RBM
RE
L
E
MBC964
L3
RC
E
XTB
EG
eV
−
XTI
CJE
VJE
MJE
TF
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
pF
V
Fig.6 Package equivalent circuit SOT143.
−
ps
−
List of components (see Fig.6)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
Cbe
Ccb
Cce
L1
84
17
fF
A
fF
PTF
CJC
VJC
MJC
XCJC
TR
deg
pF
V
191
fF
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
L2
−
L3
−
LB
ns
F
LE
CJS
1995 Apr 07
6
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
Test circuit information
R2
V
bias
V
S
R1
T1
C14
C15
C11, C12,
C13
L11
L10
L8
L7
C10
C9
L9
L3
DUT
L5
50 Ω
input
50 Ω
output
C1
C8
L1
L2
L4
L6
C2
C3, C4,
C5
C6, C7
MLC851
Fig.7 Common-emitter test circuit for class-AB operation at 1900 MHz.
1995 Apr 07
7
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
List of components used in test circuit (see Fig.8)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE N0.
C1, C8, C9, C10
C2
multilayer ceramic chip capacitor; note 1 24 pF
multilayer ceramic chip capacitor; note 1 0.4 pF
multilayer ceramic chip capacitor; note 1 0.6 pF
multilayer ceramic chip capacitor; note 1 1 pF
multilayer ceramic chip capacitor; note 1 1.5 pF
multilayer ceramic chip capacitor; note 1 10 nF
C3
C4, C7
C5, C6,
C11, C12,C13
C14, C15
L1
electrolytic capacitor
stripline; note 2
10 V; 470 µF
2222 031 34471
length 4 mm
width 0.93 mm
L2
L3
L4
L5
L6
L7
L8
L9
L10
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 26 mm
width 0.93 mm
length 1.9 mm
width 0.93 mm
length 3.1 mm
width 0.93 mm
length 1.8 mm
width 0.93 mm
length 26.4 mm
width 0.93 mm
length 10 mm
width 0.93 mm
length 4.4 mm
width 0.4 mm
length 19.3 mm
width 0.93 mm
length 19.7 mm
width 0.4 mm
L11
T1
micro choke
BD228
R1
R2
metal film resistor
metal film resistor
20 Ω; 0.4 W
2322 157 10209
2322 157 12651
265 Ω; 0.4 W
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6).
1995 Apr 07
8
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
60
Base
Collector
70
V
bias
R2
T1
R1
L11
C14
C15
C12
C13
C11
L10
C10
V
S
L9
L8
C9
L7
C4
C5
C6
C8
C1 C2
L2
C3
L1
L3 L4 L5 C7
MLC852
L6
Base
Collector
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
9
1995 Apr 07
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 07
10
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG11; BFG11/X
NOTES
1995 Apr 07
11
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123055/1500/03/pp12
Date of release: 1995 Apr 07
9397 750 00017
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Philips Semiconductors
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