BFG10/XT/R [NXP]
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal;
| 型号： | BFG10/XT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal 放大器 光电二极管 晶体管 |
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BFG10; BFG10/X
NPN 2 GHz RF power transistor
Rev. 05 — 22 November 2007
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• High efficiency
BFG10 (see Fig.1)
4
3
• Small size discrete power amplifier
• 1.9 GHz operating area
1
2
3
4
collector
base
emitter
emitter
• Gold metallization ensures
excellent reliability.
1
2
Top view
MSB014
BFG10/X (see Fig.1)
APPLICATIONS
1
2
3
4
collector
emitter
base
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
Fig.1 SOT143.
emitter
DESCRIPTION
MARKING
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
TYPE NUMBER
CODE
BFG10
%MS
%MT
BFG10/X
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
200
≥5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
−
20
V
V
V
open base
−
−
−
−
−
8
open collector
2.5
250
250
400
+150
175
mA
IC(AV)
Ptot
mA
mW
°C
up to Ts = 60 °C; see Fig.2; note 1
Tstg
Tj
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
Rev. 05 - 22 November 2007
2 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 60 °C; note 1;
Ptot = 400 mW
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
CONDITIONS
open emitter; IC = 0.1 mA
open base; IC = 5 mA
MIN.
MAX.
UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
20
−
V
8
−
V
open collector; IE = 0.1 mA
VCE = 5 V; VBE = 0
2.5
−
−
V
100
−
µA
hFE
IC = 50 mA; VCE = 5 V
25
−
Cc
collector capacitance
IE = ie = 0; VCB = 3.6 V; f = 1 MHz
IC = 0; VCE = 3.6 V; f = 1 MHz
3
pF
pF
Cre
feedback capacitance
−
2
MLC818
MLC819
500
2.0
handbook, halfpage
handbook, halfpage
P
tot
(mW)
400
C
c
(pF)
1.5
300
200
100
0
1.0
0.5
0
0
50
100
150
200
0
2
4
6
8
10
(V)
o
T
( C)
V
s
CB
IC = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve
Rev. 05 - 22 November 2007
3 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
>5
>50
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
200
typ. 7
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC820
MLC821
10
100
500
P
L
(mW)
handbook, halfpage
handbook, halfpage
η
G
p
(dB)
8
c
η
c
(%)
80
400
G
p
300
200
100
6
4
60
40
2
20
0
500
(mW)
0
0
0
0
100
200
300
400
50
100
150
P
(mW)
D
P
L
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
Fig.5 Load power as a function of drive
power; typical values.
Rev. 05 - 22 November 2007
4 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
C
1
IS
2.714
102.8
0.998
28.12
6.009
403.2
2.937
31.01
0.999
2.889
0.284
1.487
1.100
3.500
1.000
3.500
0.217
0.196
0.000
1.110
3.000
5.125
0.600
0.367
12.07
99.40
7.220
3.950
0.000
2.327
0.668
0.398
0.160
0.000
0.000
750.0
0.000
0.652
fA
−
handbook, halfpage
cb
2
BF
3
NF
−
L
B
L1
L2
4
VAF
IKF
ISE
NE
V
B
B'
C'
C
5
A
E'
C
C
be
ce
6
pA
−
7
L
E
8
BR
−
MBC964
9
NR
−
L3
10
11
VAR
IKR
ISC
NC
V
A
E
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34(1)
35(1)
36(1)
37(1)
38
fA
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
RB
Ω
µA
Ω
Ω
Ω
−
IRB
RBM
RE
Fig.6 Package equivalent circuit SOT143.
RC
List of components (see Fig.6)
XTB
EG
DESIGNATION
VALUE
UNIT
eV
−
Cbe
Ccb
Cce
L1
84
17
fF
XTI
CJE
VJE
MJE
TF
fF
pF
V
191
fF
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
−
L2
ps
−
L3
XTF
VTF
ITF
LB
V
LE
A
PTF
CJC
VJC
MJC
XCJC
TR
deg
pF
V
−
−
ns
F
CJS
VJS
MJS
FC
mV
−
−
Note
1. These parameters have not been extracted,
the default values are shown.
Rev. 05 - 22 November 2007
5 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
Test circuit information
R2
V
bias
V
S
R1
T1
C12
C13
C14, C15,
C16
L10
L9
L7
L6
C11
C10
L8
L2
DUT
L4
50 Ω
50 Ω
input
output
C1
C9
L1
L3
L5
C2, C3,
C4, C5
C6, C7,
C8
MLC822
Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.
Rev. 05 - 22 November 2007
6 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
List of components used in test circuit (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE No.
C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF
C2, C3, C4, C5,
C6, C7
multilayer ceramic chip capacitor; note 1 0.86 pF
multilayer ceramic chip capacitor; note 1 1.1 pF
C8
C12, C13
C14, C15, C16
L1
electrolytic capacitor
470 µF; 10 V
2222 031 34471
multilayer ceramic chip capacitor; note 1 10 nF
stripline; note 2
length 28.5 mm
width 0.93 mm
L2
L3
L4
L5
L6
L7
L8
L9
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 2.3 mm
width 0.93 mm
length 3.1 mm
width 0.93 mm
length 3.3 mm
width 0.93 mm
length 16.3 mm
width 0.93 mm
length 10 mm
width 0.93 mm
length 4.4 mm
width 0.4 mm
length 19.3 mm
width 0.93 mm
length 19.7 mm
width 0.4 mm
L10
T1
micro choke
BD228
R1
R2
metal film resistor
metal film resistor
20 Ω; 0.4 W
530 Ω; 0.4 W
2322 157 10209
2322 157 15301
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6).
Rev. 05 - 22 November 2007
7 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
60
Base
Collector
70
V
bias
R2
T1
R1
L10
C12
C13
C15
C16
C14
L9
C11
V
S
L8
L7
C10
L6
C3 C4
C5
C6
C2
C9
L5
L1
C1
L2 L3
L4 C7 C8
MLC823
Base
Collector
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
Rev. 05 - 22 November 2007
8 of 11
NXP Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
Rev. 05 - 22 November 2007
9 of 11
BFG10; BFG10/X
NXP Semiconductors
NPN 2 GHz RF power transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
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modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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with the same product type number(s) and title. A short data sheet is intended
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full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 05 - 22 November 2007
10 of 11
BFG10; BFG10/X
NXP Semiconductors
NPN 2 GHz RF power transistor
Revision history
Revision history
Document ID
BFG10X_N_5
Modifications:
BFG10X_4
Release date
20071122
Data sheet status
Change notice
Supersedes
Product data sheet
-
BFG10X_4
• Marking table on page 2; changed code
19950831
Product specification
-
-
-
-
BFG10X_3
BFG10X_2
BFG10X_1
-
BFG10X_3
19950307
-
-
-
BFG10X_2
-
-
BFG10X_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2007
Document identifier: BFG10X_N_5
相关型号：
BFG10T/R
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
NXP
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