BFG10X_15 [JMNIC]
NPN 2 GHz RF power transistor;
| 型号： | BFG10X_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | NPN 2 GHz RF power transistor |
| 文件： | 总10页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10; BFG10/X
NPN 2 GHz RF power transistor
1995 Aug 31
Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• High efficiency
BFG10 (see Fig.1)
4
3
• Small size discrete power amplifier
• 1.9 GHz operating area
1
2
3
4
collector
base
emitter
emitter
• Gold metallization ensures
excellent reliability.
1
2
Top view
MSB014
BFG10/X (see Fig.1)
APPLICATIONS
1
2
3
4
collector
emitter
base
• Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
Fig.1 SOT143.
emitter
DESCRIPTION
MARKING
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
TYPE NUMBER
CODE
BFG10
N70
N71
BFG10/X
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
200
≥5
≥50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
−
20
V
V
V
open base
−
−
−
−
−
8
open collector
2.5
250
250
400
+150
175
mA
IC(AV)
Ptot
mA
mW
°C
up to Ts = 60 °C; see Fig.2; note 1
Tstg
Tj
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Aug 31
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 60 °C; note 1;
Ptot = 400 mW
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
CONDITIONS
open emitter; IC = 0.1 mA
open base; IC = 5 mA
MIN.
MAX.
UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
20
−
V
8
−
V
open collector; IE = 0.1 mA
VCE = 5 V; VBE = 0
2.5
−
−
V
100
−
µA
hFE
IC = 50 mA; VCE = 5 V
25
−
Cc
collector capacitance
IE = ie = 0; VCB = 3.6 V; f = 1 MHz
IC = 0; VCE = 3.6 V; f = 1 MHz
3
pF
pF
Cre
feedback capacitance
−
2
MLC818
MLC819
500
2.0
handbook, halfpage
handbook, halfpage
P
tot
(mW)
400
C
c
(pF)
1.5
300
200
100
0
1.0
0.5
0
0
50
100
150
200
0
2
4
6
8
10
(V)
o
T
( C)
V
s
CB
IC = 0; f = 1 MHz.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve
1995 Aug 31
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).
f
VCE
(V)
ICQ
(mA)
PL
(mW)
Gp
(dB)
ηc
(%)
MODE OF OPERATION
(GHz)
>5
>50
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
1
200
typ. 7
typ. 60
Ruggedness in class-AB operation
The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC820
MLC821
10
100
500
P
L
(mW)
handbook, halfpage
handbook, halfpage
η
G
p
(dB)
8
c
η
c
(%)
80
400
G
p
300
200
100
6
4
60
40
2
20
0
500
(mW)
0
0
0
0
100
200
300
400
50
100
150
P
(mW)
D
P
L
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for PL = 200 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
Fig.5 Load power as a function of drive
power; typical values.
1995 Aug 31
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
C
1
IS
2.714
102.8
0.998
28.12
6.009
403.2
2.937
31.01
0.999
2.889
0.284
1.487
1.100
3.500
1.000
3.500
0.217
0.196
0.000
1.110
3.000
5.125
0.600
0.367
12.07
99.40
7.220
3.950
0.000
2.327
0.668
0.398
0.160
0.000
0.000
750.0
0.000
0.652
fA
−
handbook, halfpage
cb
2
BF
3
NF
−
L
B
L1
L2
4
VAF
IKF
ISE
NE
V
B
B'
C'
C
5
A
E'
C
C
be
ce
6
pA
−
7
L
E
8
BR
−
MBC964
9
NR
−
L3
10
11
VAR
IKR
ISC
NC
V
A
E
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34(1)
35(1)
36(1)
37(1)
38
fA
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 100 MHz.
RB
Ω
µA
Ω
Ω
Ω
−
IRB
RBM
RE
Fig.6 Package equivalent circuit SOT143.
RC
List of components (see Fig.6)
XTB
EG
DESIGNATION
VALUE
UNIT
eV
−
Cbe
Ccb
Cce
L1
84
17
fF
XTI
CJE
VJE
MJE
TF
fF
pF
V
191
fF
0.12
0.21
0.06
0.95
0.40
nH
nH
nH
nH
nH
−
L2
ps
−
L3
XTF
VTF
ITF
LB
V
LE
A
PTF
CJC
VJC
MJC
XCJC
TR
deg
pF
V
−
−
ns
F
CJS
VJS
MJS
FC
mV
−
−
Note
1. These parameters have not been extracted,
the default values are shown.
1995 Aug 31
5
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
Test circuit information
R2
V
bias
V
S
R1
T1
C12
C13
C14, C15,
C16
L10
L9
L7
L6
C11
C10
L8
L2
DUT
L4
50 Ω
50 Ω
input
output
C1
C9
L1
L3
L5
C2, C3,
C4, C5
C6, C7,
C8
MLC822
Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.
1995 Aug 31
6
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
List of components used in test circuit (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE No.
C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF
C2, C3, C4, C5,
C6, C7
multilayer ceramic chip capacitor; note 1 0.86 pF
multilayer ceramic chip capacitor; note 1 1.1 pF
C8
C12, C13
C14, C15, C16
L1
electrolytic capacitor
470 µF; 10 V
2222 031 34471
multilayer ceramic chip capacitor; note 1 10 nF
stripline; note 2
length 28.5 mm
width 0.93 mm
L2
L3
L4
L5
L6
L7
L8
L9
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
length 2.3 mm
width 0.93 mm
length 3.1 mm
width 0.93 mm
length 3.3 mm
width 0.93 mm
length 16.3 mm
width 0.93 mm
length 10 mm
width 0.93 mm
length 4.4 mm
width 0.4 mm
length 19.3 mm
width 0.93 mm
length 19.7 mm
width 0.4 mm
L10
T1
micro choke
BD228
R1
R2
metal film resistor
metal film resistor
20 Ω; 0.4 W
530 Ω; 0.4 W
2322 157 10209
2322 157 15301
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6).
1995 Aug 31
7
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
60
Base
Collector
70
V
bias
R2
T1
R1
L10
C12
C13
C15
C16
C14
L9
C11
V
S
L8
L7
C10
L6
C3 C4
C5
C6
C2
C9
L5
L1
C1
L2 L3
L4 C7 C8
MLC823
Base
Collector
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and
serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7.
1995 Aug 31
8
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
PACKAGE OUTLINE
3.0
2.8
0.150
B
1.9
0.090
A
B
M
0.75
0.2
A
0.60
4
3
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.9 SOT143.
1995 Aug 31
9
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
BFG10; BFG10/X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Aug 31
10
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