BFG10W [NXP]
UHF power transistor; 超高频功率晶体管
| 型号： | BFG10W |
| 厂家： | 
NXP |
| 描述： | UHF power transistor |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
1995 Sep 22
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
FEATURES
DESCRIPTION
•
High efficiency
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
page
• Small size discrete power amplifier
4
1
3
• 900 MHz and 1.9 GHz operating
areas
PINNING
• Gold metallization ensures
2
excellent reliability.
PIN
1
DESCRIPTION
collector
Top view
MBK523
APPLICATIONS
2
emitter
base
• Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
3
Marking code: T5.
4
emitter
Fig.1 SOT343.
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
1.9
0.9
0.9
3.6
6
200
650
360
≥5
≥50
≥50
≥50
≥10
6
≥12.5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open base
−
10
V
V
open collector
−
2.5
−
250
250
400
+150
175
mA
mA
mW
°C
IC(AV)
Ptot
−
up to Ts = 102 °C; note 1
−
Tstg
Tj
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 102 °C; note 1;
Ptot = 400 mW
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
MAX.
UNIT
V(BR)CBO collector-base breakdown voltage
open emitter; IC = 0.1 mA
−
−
−
V
V
V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA
10
2.5
−
V(BR)EBO emitter-base breakdown voltage
open collector; IE = 0.1 mA
VCE = 6 V; VBE = 0
ICES
hFE
Cc
collector cut-off current
DC current gain
100
−
µA
IC = 50 mA; VCE = 5 V
25
−
collector capacitance
feedback capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCE = 6 V; f = 1 MHz
3
pF
pF
Cre
−
2
MBG431
3
10
Z
th j-a
(K/W)
δ = 1
0.75
2
10
0.5
0.33
0.2
0.1
0.05
0.02
0.01
t
p
10
P
=
δ
T
t
t
p
T
1
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
t
(s)
1
p
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
MLC819
2.0
handbook, halfpage
C
c
(pF)
1.5
1.0
0.5
0
0
2
4
6
8
10
(V)
V
CB
Fig.3 Collector capacitance as a function of
collector-base voltage.
1995 Sep 22
4
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit.
f
MODE OF OPERATION
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms
1.9
0.9
3.6
6
200
650
≥5; typ. 7
≥10
≥50; typ. 60
≥50
≥12.5
≥50
0.9
6
360
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
MBG194
10
100
16
80
60
handbook, halfpage
handbook, halfpage
η
η
c
(%)
G
p
(dB)
8
G
c
p
η
G
c
(%)
p
c
(dB)
12
80
η
G
p
6
4
60
40
8
4
40
20
20
2
20
0
500
(mW)
0
0.3
0
0
100
200
300
400
0.5
0.7
0.9
1.1
P (mW)
L
P
L
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL = 200 mW.
VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 600 mW.
Fig.4 Power gain and efficiency as functions
of load power; typical values.
Fig.5 Power gain and efficiency as functions
of load power; typical values.
1995 Sep 22
5
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
TR1
DESCRIPTION
VALUE
note 1
DIMENSIONS
CATALOGUE No.
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
C1, C4, C7
C2
120 pF
6.8 pF
C3
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C6
capacitor; note 2
1.9 pF
C8
Philips multilayer capacitor
Philips capacitor
1 nF, 10 V
1500 µF, 10 V
C9
2222 032 14152
4312 020 36690
L1
6 turns enamelled 0.7 mm copper wire
2 turns enamelled 0.7 mm copper wire
RF choke, Philips
length 3.5 mm
length 3 mm
L4
L2, L3
R1
metal film resistor
275 Ω
100 Ω
10 Ω
R2
metal film resistor
R3
metal film resistor
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
+V
+V
CC
bias
R1
R2
C9
L3
R3
TR1
C8
L2
C4
L4
L1
C1
C7
DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
6
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
note 1
DIMENSIONS CATALOGUE No.
TR1
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
C1, C6, C7, C8
C2
24 pF
0.4 pF
C3
capacitor; note 2
2.4 pF
C4
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C9, C10
L1, L2
R1, R2
R3, R4
Philips capacitor
1500 µF, 10 V
2222 032 14152
4330 030 36301
RF choke, Philips
metal film resistor
75 Ω
10 Ω
metal film resistor
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
L1
R1
R2
+V
bias
L2
+V
TR1
CC
C9
C10
C7
C8
C6
C1
DUT
C2
C3
C4
C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
7
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
PACKAGE OUTLINE
1.00
max
0.4
0.2
0.2
A
0.2
B
M
M
0.1
max
0.2
4
3
A
2.2
2.0
1.35
1.15
0.3
0.1
1
2
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB374
Dimensions in mm.
Fig.8 SOT343.
1995 Sep 22
8
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 22
9
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