AFT27S012N [NXP]
RF Power LDMOS Transistor;
| 型号： | AFT27S012N |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistor |
| 文件： | 总10页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFT27S012N
Rev. 0, 07/2017
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
AFT27S012NT1
This 1.26 W RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 2700 MHz.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.(1)
728–2700 MHz, 1.26 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
2100 MHz
G
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
2110 MHz
2140 MHz
2170 MHz
2200 MHz
(dB)
20.8
20.9
20.9
20.8
(%)
22.0
22.6
22.8
22.9
9.8
9.6
9.4
9.3
–41.1
–40.7
–40.8
–40.4
–9
–10
–10
–9
PLD--1.5W
PLASTIC
1. All data measured in fixture with device soldered to heatsink.
Features
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
Universal broadband driven device with internal RF feedback
RF /V
in GS
RF /V
out DS
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
Figure 1. Pin Connections
2017 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
--0.5, +65
--6.0, +10
32, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
--65 to +150
--40 to +150
--40 to +150
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
3.4
C/W
JC
Case Temperature 77C, 1.3 W CW, 28 Vdc, I = 110 mA, 2450 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
C3
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 32 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 15.4 Adc)
V
V
0.8
1.5
0.1
1.2
1.8
0.2
1.6
2.3
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 90 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 154 mAdc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
AFT27S012NT1
RF Device Data
NXP Semiconductors
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, P = 1.26 W Avg., f = 2170 MHz, Single--Carrier
DD
DQ
out
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ 5 MHz Offset.
Power Gain
G
20.0
18.5
—
20.9
22.8
--40.8
-- 1 2
—
—
dB
%
ps
D
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
ACPR
IRL
–37.9
–9
dBc
dB
—
Load Mismatch (In NXP Test Fixture, 50 ohm system) I = 90 mA, f = 2140 MHz
DQ
VSWR 10:1 at 32 Vdc, 16.6 W CW Output Power
No Device Degradation
(3 dB Input Overdrive from 125 mW CW Rated Power)
(1)
Typical Performance (In NXP Test Fixture, 50 ohm system) V = 28 Vdc, I = 90 mA, 2110--2200 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
—
—
13
—
—
W
out
AM/PM
–13
(Maximum value measured at the P3dB compression point across
the 2110--2200 MHz frequency range.)
Gain Flatness in 90 MHz Bandwidth @ P = 1.26 W Avg.
G
—
—
0.20
—
—
dB
out
F
Gain Variation over Temperature
G
0.004
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.010
—
dB/C
(--30C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
Package
AFT27S012NT1
T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel
PLD--1.5W
1. All data measured in fixture with device soldered to heatsink.
AFT27S012NT1
RF Device Data
NXP Semiconductors
3
V
V
DD
GG
C7
C6
C13
C12
C8
R1
C5*
C1*
C4
C3
Q1
C2
C9
C10
C11
AFT27S010N
Rev. 2
2100MHz
D53402
V
DD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heatsink. AFT27S012N uses the AFT27S0101N production fixture;
board and parts list are identical.
Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2200 MHz
Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2200 MHz
Part
Description
9.1 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C5, C6, C8, C9
ATC100B9R1JT500XT
C2
1.1 pF Chip Capacitor
2.0 pF Chip Capacitor
1.0 pF Chip Capacitor
10 F Chip Capacitors
RF Power LDMOS Transistor
2.37 Chip Resistor
ATC100B1R1JT500XT
ATC100B2R0JT500XT
ATC100B1R0JT500XT
GRM32ER61H106KA12L
AFT27S010N
ATC
C3
ATC
C4
ATC
C7, C10, C11, C12, C13
Murata
NXP
Q1
R1
CRCW12062R37FKEA
D53402
Vishay
MTL
PCB
Rogers RO4350B, 0.020, = 3.66
r
AFT27S012NT1
RF Device Data
NXP Semiconductors
4
0.28
7.11
0.165
4.91
0.089
2.26
0.155
3.94
Solder pad with thermal via
structure. All dimensions in mm.
0.085
2.16
Figure 3. PCB Pad Layout for PLD--1.5W
AFS12
N( )A
WLYWWZ
Figure 4. Product Marking
AFT27S012NT1
RF Device Data
NXP Semiconductors
5
PACKAGE DIMENSIONS
AFT27S012NT1
RF Device Data
NXP Semiconductors
6
AFT27S012NT1
RF Device Data
NXP Semiconductors
7
AFT27S012NT1
RF Device Data
NXP Semiconductors
8
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2017
Initial release of data sheet
AFT27S012NT1
RF Device Data
NXP Semiconductors
9
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
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E 2017 NXP B.V.
Document Number: AFT27S012N
Rev. 0, 07/2017
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