AFV09P350-04NR3 [NXP]
RF Power LDMOS Transistors;
| 型号： | AFV09P350-04NR3 |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总20页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFV09P350--04N
Rev. 0, 1/2014
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
AFV09P350--04NR3
AFV09P350--04GNR3
N--Channel Enhancement--Mode Lateral MOSFETs
These 100 W symmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications covering the frequency range of
720 to 960 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
720–960 MHz, 100 W AVG., 48 V
AIRFAST RF POWER LDMOS
TRANSISTORS
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
19.5
19.5
19.2
(%)
48.5
49.5
48.0
7.2
7.1
7.0
–29.2
–32.0
–35.7
OM--780--4L
PLASTIC
AFV09P350--04NR3
Features
Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
OM--780G--4L
PLASTIC
AFV09P350--04GNR3
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.
Carrier
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
Peaking
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +105
–6.0, +10
55, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
0.45
C/W
JC
Case Temperature 86C, 102 W W--CDMA, 48 Vdc, I
= 860 mA, V
= 0.9 Vdc, 940 MHz
GSB
DQA
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
A
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 105 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 48 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
(4)
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 460 Adc)
V
V
1.3
2.0
0.1
1.8
2.5
2.3
3.0
0.3
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 860 mAdc, Measured in Functional Test)
DD
DA
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
0.21
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/
Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
= 860 mA, V = 0.9 Vdc,
GSB
Max
Unit
(1,2,3)
Functional Tests
(In Freescale Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
DD
DQA
P
= 100 W Avg., f = 920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
G
18.5
45.0
6.6
19.5
48.5
7.2
21.5
—
dB
%
ps
D
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
—
dB
dBc
ACPR
—
–29.2
–27.0
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
= 860 mA, V
= 0.9 Vdc, f = 940 MHz
GSB
DQA
VSWR 10:1 at 52 Vdc, 500 W Pulsed Output Power
(3 dB Input Overdrive from 200 W Pulsed Rated Power)
No Device Degradation
(2)
Typical Performances (In Freescale Doherty Test Fixture, 50 ohm system) V = 48 Vdc, I
= 860 mA, V
= 0.9 Vdc, 920--960 MHz
GSB
DD
DQA
Bandwidth
P
P
@ 1 dB Compression Point, CW
P1dB
P3dB
—
200
500
–21
—
—
—
W
W
out
out
(4)
@ 3 dB Compression Point
—
—
AM/PM
(Maximum value measured at the P3dB compression point across
the 920--960 MHz frequency range)
VBW Resonance Point
VBW
—
43
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 100 W Avg.
G
—
—
0.3
—
—
dB
out
F
Gain Variation over Temperature
G
0.01
dB/C
(--30C to +85C)
Output Power Variation over Temperature
P1dB
—
0.0075
—
dB/C
(--30C to +85C)
1. Part internally input matched.
2. Measurement made with device in a symmetrical Doherty configuration.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
4. P3dB = P + 7.0 dB where P is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
3
V
V
DDA
GGA
C16
C14
C5
C4
C15
R1
C
D47369
C26
C17
C21
C11
C18
C3
C8
Z1
R3
C12
C19
C13
C20
C1
C6
C2
C7
C25
C27
P
R2
AFV09P350--4N
Rev. 0
C23
C9
C10
C22
--
C24
V
V
DDB
GGB
Figure 2. AFV09P350--04NR3 Test Circuit Component Layout
Table 6. AFV09P350--04NR3 Test Circuit Component Designations and Values
Part
Description
33 pF Chip Capacitors
Part Number
Manufacturer
ATC
C1, C6, C13, C20
ATC100B330JT500XT
C2, C7, C17, C21
C3, C8
4.3 pF Chip Capacitors
ATC100B4R3CT500XT
ATC100B6R8CT500XT
ATC100B470JT500XT
ATC
6.8 pF Chip Capacitors
ATC
C4, C9. C14, C22
C5, C10
C11, C18
C12, C19
C15, C23
C16, C24
C25
47 pF Chip Capacitors
ATC
2.2 F Chip Capacitors
C3225X7R1H225K250AB
ATC100B120JT500XT
ATC100B8R2CT500XT
C5750X7S2A106M230KB
TDK
12 pF Chip Capacitors
ATC
8.2 pF Chip Capacitors
ATC
10 F Chip Capacitors
TDK
220 F, 100 V Electrolytic Capacitors
0.5 pF Chip Capacitor
MCGPR100V227M16X26-RH
ATC100B0R5BT500XT
ATC100B0R3BT500XT
ATC100B0R8BT500XT
RC1206FR-071R5L
RFP-375375N6Z50-2
X3C09P1-03S
Multicomp
ATC
C26
0.3 pF Chip Capacitor
ATC
C27
0.8 pF Chip Capacitor
ATC
R1, R2
1.5 , 1/4 W Chip Resistors
50 , 30 W Termination
800--1000 MHz Band, 90, 3 dB Hybrid Coupler
Yageo
Anaren
Anaren
MTL
R3
Z1
PCB
Rogers RO4350B, 0.020, = 3.66
D47369
r
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
4
TYPICAL CHARACTERISTICS
20
19
18
17
16
15
14
13
12
11
10
60
50
40
D
V
= 48 Vdc, P = 100 W (Avg.)
out
DD
30
I
= 860 mA, V
= 0.9 Vdc
DQA
GSB
20
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
G
ps
-- 2 1
-- 2 4
-- 2 7
-- 3 0
-- 3 3
-- 3 6
-- 2
-- 3
-- 4
-- 5
-- 6
-- 7
PARC
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
ACPR
940
820
840
860
880
900
920
960
980
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 100 Watts Avg.
-- 1 5
V
V
= 48 Vdc, P = 136 W (PEP), I
= 860 mA
DD
out
DQA
= 0.9 Vdc, Two--Tone Measurements
GSB
(f1 + f2)/2 = Center Frequency of 940 MHz
-- 2 5
-- 3 5
-- 4 5
-- 5 5
-- 6 5
IM3--L
IM3--U
IM5--U
IM5--L
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 1 5
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
22
20
18
16
14
12
10
1
0
60
V
= 48 Vdc, I
= 860 mA, V
= 0.9 Vdc
GSB
DD
DQA
D
f = 940 MHz, Single--Carrier W--CDMA
50
–1 dB = 41.4 W
G
ps
-- 1
-- 2
40
30
20
10
0
–2 dB = 78 W
ACPR
PARC
-- 3
-- 4
–3 dB = 108.7 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
-- 5
30
50
70
90
110
130
P
, OUTPUT POWER (WATTS)
out
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
24
60
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
-- 7 0
V
V
= 48 Vdc, I
= 860 mA
DD
DQA
940 MHz
920 MHz
960 MHz
= 0.9 Vdc, Single--Carrier
GSB
22
20
18
50
40
30
20
10
0
W--CDMA, 3.84 MHz Channel
Bandwidth
G
ps
960 MHz
940 MHz
920 MHz
16 960 MHz
14
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
ACPR
D
12
1
10
, OUTPUT POWER (WATTS) AVG.
100
300
P
out
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
V
P
= 48 Vdc
= 0 dBm
DD
in
18
16
14
I
= 860 mA,
= 0.9 Vdc
DQA
Gain
V
GSB
12
10
8
650
700
750
800
850
900
950
1000 1050
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
6
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
V
= 48 Vdc, I = 862 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
59.9
59.9
59.8
Gain (dB)
21.3
(dBm)
54.1
(W)
260
258
(MHz)
920
2.39 – j3.65
2.54 – j4.03
2.90 – j4.64
2.32 + j3.41
1.84 + j0.12
1.85 + j0.11
1.77 + j0.13
–14
–14
–15
940
960
2.49 + j3.84
2.76 + j4.31
21.3
54.1
21.2
54.1
259
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
61.1
60.8
60.6
Gain (dB)
19.1
(dBm)
54.8
(W)
301
299
(MHz)
920
940
960
2.39 – j3.65
2.29 + j3.66
2.11 – j0.03
2.04 – j0.03
1.97 – j0.01
–19
–18
–19
2.54 – j4.03
2.90 – j4.64
2.45 + j4.12
2.74 + j4.63
19.2
54.8
19.1
54.8
300
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 48 Vdc, I = 862 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
DQ
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
71.8
71.9
71.6
Gain (dB)
(dBm)
(W)
(MHz)
920
2.39 – j3.65
2.54 – j4.03
2.90 – j4.64
2.11 + j3.81
1.51 + j1.85
1.43 + j1.84
1.46 + j1.61
24.3
51.5
140
–20
–21
–20
940
960
2.27 + j4.24
2.60 + j4.68
24.3
23.8
51.4
52.2
138
164
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
71.6
71.8
72.0
Gain (dB)
(dBm)
(W)
(MHz)
920
940
960
2.39 – j3.65
2.22 + j3.95
1.92 + j1.53
1.74 + j1.57
1.59 + j1.48
21.5
53.2
207
–25
–27
–27
2.54 – j4.03
2.90 – j4.64
2.38 + j4.45
2.66 + j4.94
21.7
21.5
52.9
53.1
197
206
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
7
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
V
= 48 Vdc, V
= 0.9 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Output Power
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
66.5
66.9
66.5
Gain (dB)
16.8
(dBm)
54.7
(W)
294
291
(MHz)
920
940
960
2.39 – j3.65
2.33 + j3.43
1.52 + j0.07
1.44 + j0.21
1.58 + j0.24
–25
–25
–25
2.54 – j4.03
2.90 – j4.64
2.44 + j3.87
2.64 + j4.34
16.9
54.6
17.0
54.5
283
Max Output Power
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
66.8
68.0
66.8
Gain (dB)
14.7
(dBm)
55.3
(W)
335
332
(MHz)
920
2.39 – j3.65
2.28 + j3.69
1.68 – j0.06
1.60 + j0.13
1.71 + j0.14
–29
–30
–30
940
960
2.54 – j4.03
2.90 – j4.64
2.40 + j4.15
2.61 + j4.66
14.9
55.2
14.9
55.1
325
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
V
= 48 Vdc, V
= 0.9 Vdc, Pulsed CW, 10 sec(on), 10% Duty Cycle
DD
GSB
Max Drain Efficiency
P1dB
(1)
Z
AM/PM
()
f
Z
Z
in
()
load
()
D
source
()
(%)
78.9
81.4
81.6
Gain (dB)
(dBm)
(W)
(MHz)
920
940
960
2.39 – j3.65
2.22 + j3.39
1.81 + j1.79
1.35 + j2.23
1.24 + j2.22
17.5
52.4
174
–29
–35
–36
2.54 – j4.03
2.90 – j4.64
2.27 + j3.80
2.43 + j4.27
17.6
17.6
51.2
51.2
131
131
Max Drain Efficiency
P3dB
(2)
Z
()
AM/PM
()
f
Z
Z
()
load
D
source
()
in
(%)
77.1
78.9
78.7
Gain (dB)
(dBm)
(W)
(MHz)
920
2.39 – j3.65
2.20 + j3.66
2.07 + j1.45
1.86 + j1.49
1.70 + j1.64
15.5
53.6
231
–33
–36
–37
940
960
2.54 – j4.03
2.90 – j4.64
2.31 + j4.12
2.50 + j4.62
15.7
15.8
53.6
53.4
231
218
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
Z
Z
= Measured impedance presented to the input of the device at the package reference plane.
= Impedance as measured from gate contact to ground.
= Measured impedance presented to the output of the device at the package reference plane.
source
in
load
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
Z
in
Z
load
source
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
8
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 940 MHz
3
3
50.5
51.5
50
56
58
51
2.5
2
2.5
2
52
E
E
60
66
1.5
1
1.5
1
52.5
70
64
68
62
53
0.5
0
0.5
0
P
P
58
54
53.5
56
-- 0 . 5
-- 1
-- 0 . 5
-- 1
53
52.5
1.5
2
2.5
3
1.5
2
2.5
3
1
3.5
1
3.5
REAL ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
3
3
-- 1 0
-- 1 2
25
24.5
2.5
2
2.5
2
23.5
23
24
E
E
-- 2 4
1.5
1
1.5
1
-- 1 6
-- 1 8
-- 1 4
-- 2 2
-- 2 0
22.5
22
0.5
0
0.5
0
21.5
21
P
P
-- 0 . 5
-- 1
-- 0 . 5
-- 1
1.5
2
2.5
3
1.5
2
2.5
3
1
3.5
1
3.5
REAL ()
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
Figure 10. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 940 MHz
3
3
56
58
2.5
2
2.5
52
53
51.5
60
51
52.5
2
1.5
1
E
E
1.5
1
53.5
68
58
70
66
64
0.5
0
0.5
0
54
62
P
P
60
54.5
56
-- 0 . 5
-- 1
-- 0 . 5
-- 1
53.5
1.5
2
2.5
3
1.5
2
2.5
3
1
3.5
1
3.5
REAL ()
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
3
3
2.5
2.5
2
22
21.5
21
2
1.5
1
22.5
-- 2 2
-- 2 0
E
E
1.5
1
20.5
20
-- 3 0
-- 2 8
-- 2 6
-- 2 4
-- 1 8
0.5
0
0.5
0
19.5
P
P
19
18.5
-- 1 6
-- 0 . 5
-- 1
-- 0 . 5
-- 1
1.5
2
2.5
3
1.5
2
2.5
3
1
3.5
1
3.5
REAL ()
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
Figure 14. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
10
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 940 MHz
3
3
50.5
51.5
52
51
2.5
2
2.5
2
E
E
78
80
52.5
76
74
1.5
1
1.5
1
68
72
70
66
0.5
0
0.5
0
54.5
53
P
P
54
53.5
-- 0 . 5
-- 1
-- 0 . 5
-- 1
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 16. P1dB Load Pull Output Power Contours (dBm)
Figure 17. P1dB Load Pull Efficiency Contours (%)
3
3
16.5
-- 2 0
-- 3 4
E
2.5
2.5
2
E
-- 3 2
-- 3 0
-- 3 6
2
18
-- 2 4
-- 2 2
-- 2 6
1.5
1.5
1
17.5
18.5
-- 2 4
-- 2 8
1
0.5
0.5
0
P
17
P
0
-- 0 . 5
-- 1
16.5
16
-- 0 . 5
-- 1
15.5
15
14.5
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 19. P1dB Load Pull AM/PM Contours ()
Figure 18. P1dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFV09P350--04NR3 AFV09P350--04GNR3
11
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 940 MHz
3
3
51
51.5
52
52.5
2.5
2
2.5
2
53
53.5
54
1.5
1
1.5
1
E
E
78 76
74
54.5
72
68
66
70
64
0.5
0
0.5
0
55
P
P
62
-- 0 . 5
-- 1
-- 0 . 5
-- 1
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 20. P3dB Load Pull Output Power Contours (dBm)
Figure 21. P3dB Load Pull Efficiency Contours (%)
3
3
2.5
2.5
2
-- 3 4
-- 3 6
-- 3 8
-- 4 2
-- 4 0
2
16
-- 2 8
-- 2 6
1.5
1
1.5
1
E
E
15.5
15
-- 3 2
-- 3 0
0.5
0
0.5
0
P
P
14.5
14
-- 0 . 5
-- 1
-- 0 . 5
-- 1
12
13.5
13
12.5
1.5
2
2.5
3
1.5
2
2.5
3
0.5
1
3.5
0.5
1
3.5
REAL ()
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
Figure 22. P3dB Load Pull Gain Contours (dB)
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
12
PACKAGE DIMENSIONS
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
13
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
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AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
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AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
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AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
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AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
18
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2014
Initial Release of Data Sheet
AFV09P350--04NR3 AFV09P350--04GNR3
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2014 Freescale Semiconductor, Inc.
Document Number: AFV09P350--04N
Rev. 0, 1/2014
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