AFV10700GS [NXP]
RF Power LDMOS Transistors;
| 型号： | AFV10700GS |
| 厂家： | 
NXP |
| 描述： | RF Power LDMOS Transistors |
| 文件： | 总19页 (文件大小：709K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: AFV10700H
Rev. 1, 01/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistors
AFV10700H
AFV10700HS
AFV10700GS
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at
1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at
reduced power. These devices are suitable for use in defense and commercial
pulse applications with large duty cycles and long pulses, such as IFF,
secondary surveillance radars, ADS--B transponders, DME and other complex
pulse chains.
1030–1090 MHz, 700 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Typical Performance: In 1030–1090 MHz reference circuit, I
= 100 mA
DQ(A+B)
V
(V)
P
out
(W)
Frequency
(MHz)
G
(dB)
D
(%)
DD
ps
(1)
Signal Type
1030
1090
1030
1090
50
800 Peak
700 Peak
850 Peak
770 Peak
17.5
19.0
17.5
19.2
52.1
56.1
51.7
56.1
Pulse
(128 sec,
10% Duty Cycle)
52
NI--780H--4L
AFV10700H
Typical Performance: In 1030 MHz narrowband production test fixture,
= 100 mA
I
DQ(A+B)
V
(V)
P
out
(W)
Frequency
(MHz)
G
(dB)
(%)
DD
ps
D
Signal Type
(2)
1030
50
730 Peak
19.2
58.5
Pulse
NI--780S--4L
AFV10700HS
(128 sec,
10% Duty Cycle)
Narrowband Load Mismatch/Ruggedness
Frequency
P
(W)
Test
Voltage
in
Signal Type
VSWR
(MHz)
Result
(2)
1030
Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at
All Phase
Angles
17.2 Peak
(3 dB
Overdrive)
50
No Device
Degradation
NI--780GS--4L
AFV10700GS
1. Measured in 1030–1090 MHz reference circuit (page 5).
2. Measured in 1030 MHz narrowband production test fixture (page 9).
Features
Internally input and output matched for broadband operation and ease of use
Device can be used in a single--ended, push--pull or quadrature configuration
Qualified up to a maximum of 55 VDD operation
Gate A
Gate B
Drain A
Drain B
3
4
1
2
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation and gate voltage pulsing
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
(Top View)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2017–2018 NXP B.V.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +105
–6.0, +10
55, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–55 to +150
–55 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Total Device Dissipation @ T = 25C
P
526
W
C
D
Derate above 25C
2.63
W/C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Impedance, Junction to Case
Z
0.030
C/W
JC
Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, I
= 100 mA, 1030 MHz
DQ(A+B)
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
2, passes 2000 V
C3, passes 2000 V
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Gate--Source Leakage Current
I
—
105
—
—
—
—
—
1
—
1
Adc
Vdc
GSS
(V = 5 Vdc, V = 0 Vdc)
GS
DS
Drain--Source Breakdown Voltage
(V = 0 Vdc, I = 10 A)
V
(BR)DSS
GS
D
Zero Gate Voltage Drain Leakage Current
(V = 50 Vdc, V = 0 Vdc)
I
Adc
Adc
DSS
DSS
DS
GS
Zero Gate Voltage Drain Leakage Current
I
—
10
(V = 105 Vdc, V = 0 Vdc)
DS
GS
On Characteristics
(4)
Gate Threshold Voltage
(V = 10 Vdc, I = 260 Adc)
V
V
1.3
1.6
—
1.8
2.1
2.3
2.6
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 50 Vdc, I
= 100 mAdc, Measured in Functional Test)
DQ(A+B)
DD
(4)
Drain--Source On--Voltage
V
0.28
(V = 10 Vdc, I = 2.6 Adc)
GS
D
(4,5)
Dynamic Characteristics
Reverse Transfer Capacitance
(V = 50 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
C
rss
—
1.16
—
pF
DS
GS
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
(continued)
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
2
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) V = 50 Vdc, I
= 100 mA, P = 730 W Peak
DD
DQ(A+B)
out
(73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain
G
18.0
19.2
58.5
21.0
—
dB
%
ps
D
Drain Efficiency
Input Return Loss
54.5
—
IRL
–15
–9
dB
Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) I
= 100 mA
DQ(A+B)
Frequency
(MHz)
Signal
Type
P
in
(W)
VSWR
Test Voltage, V
Result
DD
1030
Pulse
> 20:1 at All Phase Angles
17.2 Peak
50
No Device Degradation
(128 sec,
(3 dB Overdrive)
10% Duty Cycle)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
AFV10700HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--780H--4L
NI--780S--4L
NI--780GS--4L
AFV10700HSR5
AFV10700GSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
100
10
1.11
1.08
Measured with 30 mV (rms) ac @ 1 MHz
= 0 Vdc
V
= 50 Vdc
DD
V
GS
I
= 100 mA
DQ(A+B)
1.05
500 mA
1.02
0.99
0.96
0.93
0.90
1000 mA
C
rss
1
0
10
V
20
30
40
50
–75
–50
–25
0
25
50
75
100
, DRAIN--SOURCE VOLTAGE (VOLTS)
T , CASE TEMPERATURE (C)
DS
C
Note: Each side of device measured separately.
I
(mA)
Slope (mV/C)
DQ
100
–2.73
Figure 2. Capacitance versus Drain--Source Voltage
500
–2.39
–2.09
1500
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
9
10
V
= 50 Vdc
DD
I
D
= 19.67 Amps
28.40 Amps
8
10
10
7
24.39 Amps
6
5
4
10
10
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 4. MTTF versus Junction Temperature – Pulse
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
4
1030–1090 MHz REFERENCE CIRCUIT – 2.0 3.0 (5.1 cm 7.6 cm)
Table 6. 1030–1090 MHz Performance (In NXP Reference Circuit, 50 ohm system) I
= 100 mA
DQ(A+B)
V
(V)
P
(W)
G
Frequency
(MHz)
D
DD
out
ps
Signal Type
(dB)
17.5
19.0
17.5
19.2
(%)
52.1
56.1
51.7
56.1
1030
1090
1030
1090
Pulse
50
800 Peak
700 Peak
850 Peak
770 Peak
(128 sec, 10% Duty Cycle)
52
NOTE: Size of the matching area: 1.3 2.6 (3.3 cm 6.6 cm)
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
5
1030–1090 MHz REFERENCE CIRCUIT – 2.0 3.0 (5.1 cm 7.6 cm)
C12*
C17
C18
C5
C8*
C13
C6* C7*
C15
C14*
C16*
C2*
R1
Q1
C1*
C11*
C3*
C9* C10*
C4*
D85937
*C1, C2, C3, C4, C6, C7, C8, C9, C10, C11, C12, C14 and C16 are mounted vertically.
Figure 5. AFV10700H Reference Circuit Component Layout – 1030–1090 MHz
Table 7. AFV10700H Reference Circuit Component Designations and Values – 1030–1090 MHz
Part
Description
Part Number
Manufacturer
ATC
C1
1.5 pF Chip Capacitor
ATC800B1R5BT500XT
C2, C8, C14
C3, C4
C5, C15
C6, C12
C7
39 pF Chip Capacitor
ATC800B390JT500XT
ATC800B4R3CT500XT
C3225X7R2A225K230AB
ATC800B102JT50XT
ATC800B101JT500XT
ATC800B4R7CT500XT
ATC800B3R3CT500XT
GRM31CR72A105KA01L
ATC800B511JT200XT
MCGPR63V477M13X26--RH
AFV10700H
ATC
4.3 pF Chip Capacitor
ATC
2.2 F Chip Capacitor
TDK
1000 pF Chip Capacitor
100 pF Chip Capacitor
4.7 pF Chip Capacitor
ATC
ATC
C9
ATC
C10, C11
C13
3.3 pF Chip Capacitor
ATC
1.0 F Chip Capacitor
Murata
ATC
C16
510 pF Chip Capacitor
470 F, 63 V Electrolytic Capacitor
RF High Power LDMOS Transistor
10 , 1/8 W Chip Resistor
C17, C18
Q1
Multicomp
NXP
R1
RK73H2ATTD10R0F
D85937
KAO Speer
MTL
PCB
Rogers RO3010 0.025, = 11.2
r
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
6
TYPICAL CHARACTERISTICS – 1030–1090 MHz
REFERENCE CIRCUIT
21
70
60
1090 MHz
1090 MHz
1030 MHz
20
19
18
17
G
ps
D
50
40
30
20
1030 MHz
16
15
V
= 50 Vdc, I
= 100 mA
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
10
0
100 200 300 400 500 600 700 800 900 1000
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 6. Power Gain and Drain Efficiency versus
Output Power – 50 V
70
21
1090 MHz
1030 MHz
1090 MHz
60
50
40
30
20
10
20
19
G
ps
D
1030 MHz
18
17
16
15
V
= 52 Vdc, I
= 100 mA
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
0
200
400
600
800
1000
1200
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 7. Power Gain and Drain Efficiency versus
Output Power – 52 V
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
7
1030–1090 MHz REFERENCE CIRCUIT
Z = 5
o
f = 1090 MHz
Z
load
f = 1030 MHz
f = 1030 MHz
Z
source
f = 1090 MHz
f
Z
Z
load
source
MHz
1030
1090
2.3 – j1.7
2.0 – j1.9
0.91 – j0.76
0.88 – j0.47
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50
50
Z
Z
load
source
Figure 8. Series Equivalent Source and Load Impedance – 1030–1090 MHz
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
8
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0 5.0 (10.2 cm 12.7 cm)
C1
C3
C25 C27
AFV10700H
Rev. 0
B1
C17
L1
C5
C7
D89532
C12
R1
Coax1
Coax3
C14*
C19*
C20*
C21*
C11
C9
C10
C16
C22*
C23*
C24*
C15*
L2
Coax2
Coax4
R2
C13
C8
C6
C2
C18
C4
B2
C26
C28
*C14, C15, C19, C20, C21, C22, C23 and C24 are mounted vertically.
Figure 9. AFV10700H Narrowband Test Circuit Component Layout – 1030 MHz
Table 8. AFV10700H Narrowband Test Circuit Component Designations and Values – 1030 MHz
Part
Description
Part Number
Manufacturer
B1, B2
C1, C2
C3, C4
C5, C6
Short RF Bead
2743019447
Fair--Rite
22 F, 35 V Tantalum Capacitor
2.2 F Chip Capacitor
T491X226K035AT
Kemet
Kemet
AVX
C1825C225J5RAC
0.1 F Chip Capacitor
CDR33BX104AKWS
ATC100B430JT500XT
ATC100B3R3CT500XT
ATC100B0R7BT500XT
ATC100B360JT500XT
ATC100B5R1CT500XT
ATC100B5R6CT500XT
C1825C103K1GACTU
C7, C8, C19, C20, C21, C22, C23, C24
43 pF Chip Capacitor
ATC
C9, C10
3.3 pF Chip Capacitor
ATC
C11
0.7 pF Chip Capacitor
ATC
C12, C13
36 pF Chip Capacitor
ATC
C14, C15
5.1 pF Chip Capacitor
ATC
C16
5.6 pF Chip Capacitor
ATC
C17, C18
0.01 F Chip Capacitor
470 F, 63 V Electrolytic Capacitor
35 Semi Rigid Coax 1.98 Shield Length
12 nH Inductor, 3 Turns
5.6 1/4 W Chip Resistor
Kemet
Multicomp
Hongsen Cable
Coilcraft
Vishay
MTL
C25, C26, C27, C28
MCGPR63V477M13X26--RH
HSF--141--35--C
GA3094--ALC
Coax1, Coax2, Coax3, Coax4
L1, L2
R1, R2
PCB
CRCW12065R60FKEA
D89532
Arlon, AD255A, 0.03, = 2.55
r
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
9
TYPICAL CHARACTERISTICS – 1030 MHz, TC = 25_C
PRODUCTION TEST FIXTURE
22
90
21.0
V
= 50 Vdc, f = 1030 MHz
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DD
DD
DQ(A+B)
80
70
60
50
40
30
20
10
Pulse Width = 128 sec, Duty Cycle = 10%
20.5
20.0
Pulse Width = 128 sec, Duty Cycle = 10%
21
20
19
18
17
I
= 1000 mA
DQ(A+B)
19.5
19.0
18.5
18.0
17.5
17.0
G
ps
500 mA
D
100 mA
50
100
P
200
300
500 700
1000
50
100
500
, OUTPUT POWER (WATTS) PEAK
1000
P
, OUTPUT POWER (WATTS) PEAK
out
out
Figure 10. Power Gain and Drain Efficiency
versus Output Power
Figure 11. Power Gain versus Output Power and
Quiescent Drain Current
1200
1000
800
24
22
I
= 100 mA, f = 1030 MHz
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DQ(A+B)
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
Pulse Width = 128 sec, Duty Cycle = 10%
T
= –55_C
C
25_C
85_C
20
18
16
14
12
600
50 V
400
200
0
45 V
40 V
35 V
500
V
= 30 V
DD
10
50
32
28
30
34
36
38
40
42
44
100
P
200
1000
P , INPUT POWER (dBm) PEAK
, OUTPUT POWER (WATTS) PEAK
in
out
Figure 12. Power Gain versus Output Power
and Drain Voltage
f
P1dB
(W)
P3dB
(W)
(MHz)
740
883
1030
Figure 13. Output Power versus Input Power
80
26
V
= 50 Vdc, I
= 100 mA, f = 1030 MHz
DD
DQ(A+B)
Pulse Width = 128 sec, Duty Cycle = 10%
70
24
22
20
18
16
14
12
D
T
= 25_C
–55_C
C
60
50
40
30
20
10
85_C
T
= –55_C
C
G
ps
25_C
85_C
0
200
400
600
800
1000
1200
P
, OUTPUT POWER (WATTS) PEAK
out
Figure 14. Power Gain and Drain Efficiency versus
Output Power
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
10
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
Z
Z
load
source
MHz
1030
4.0 – j6.9
3.9 – j1.4
Z
Z
=
=
Test circuit impedance as measured from
gate to gate, balanced configuration.
source
Test circuit impedance as measured
from drain to drain, balanced configuration.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
--
+
50
50
+
--
Z
Z
load
source
Figure 15. Series Equivalent Source and Load Impedance – 1030 MHz
AFV10700H AFV10700HS AFV10700GS
11
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
12
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
13
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
14
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
15
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
16
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
17
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
1
May 2017
Jan. 2018
Initial release of data sheet
Added part number AFV10700GS, p. 1
Production test fixture, Typical Characteristic graphs: clarified temperature condition, p. 10
Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 16–17
AFV10700H AFV10700HS AFV10700GS
RF Device Data
NXP Semiconductors
18
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implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
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that may be provided in NXP data sheets and/or specifications can and do vary in
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E 2017–2018 NXP B.V.
Document Number: AFV10700H
Rev. 1, 01/2018
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