933817060112 [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933817060112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 晶体管 |
| 文件： | 总12页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245
VHF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
FEATURES
PIN CONFIGURATION
• High power gain
fpage
• Low noise figure
1
4
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
d
s
g
MBB072
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
2
3
MSB057
Fig.1 Simplified outline and symbol.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
Matched gate-source voltage (VGS
groups are available on request.
)
WARNING
PINNING - SOT123
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN
1
DESCRIPTION
drain
2
source
gate
3
4
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a class-B test circuit.
f
MODE OF OPERATION
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
CW, class-B
175
28
30
> 13
> 50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
65
UNIT
VGS = 0
VDS = 0
−
−
−
−
V
±VGS
ID
gate-source voltage
DC drain current
20
6
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
68
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-mb
thermal resistance from
junction to mounting base
Tmb = 25 °C; Ptot = 68 W
2.6 K/W
Rth mb-h
thermal resistance from
Tmb = 25 °C; Ptot = 68 W
0.3 K/W
mounting base to heatsink
MRA921
MGP167
10
100
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
80
(1)
(2)
(2)
60
40
20
1
(1)
−1
10
0
0
2
1
10
10
40
80
120
160
V
(V)
T
(°C)
DS
h
(1) Current is this area may be limited by RDS(on)
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
VGS = 0; ID = 10 mA
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
65
−
−
−
−
−
−
−
V
IDSS
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 10 mA; VDS = 10 V
2
mA
µA
V
IGSS
−
1
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 10 mA; VDS = 10 V
matched devices
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 1.5 A; VDS = 10 V
1.2
−
1.9
0.4
10
125
75
7
−
S
RDS(on)
IDSX
Cis
ID = 1.5 A; VGS = 10 V
0.75
−
Ω
VGS = 10 V; VDS = 10 V
−
A
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
−
−
pF
pF
pF
dB
Cos
Crs
output capacitance
−
−
feedback capacitance
noise figure (see Fig.14)
−
−
F
input and output power matched for: −
ID = 1 A; VDS = 28 V; PL = 30 W;
2
−
R1 = 1 kΩ; Th = 25 °C; f = 175 MHz
MGP169
MGP168
6
12
handbook, halfpage
T.C.
handbook, halfpage
T = 25 °C
j
(mV/K)
I
D
4
(A)
125 °C
8
2
0
−2
−4
4
0
−6
10
2
3
4
10
10
10
0
10
20
V
(V)
I
(mA)
GS
D
VDS = 10 V; valid for Tj = 25 to 125 °C.
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP170
MGP171
0.8
240
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS(on)
(Ω)
200
0.6
160
120
0.4
0.2
0
C
C
is
os
80
40
0
0
40
80
120
160
10
20
30
40
T (°C)
V
(V)
j
DS
VGS = 10 V;
ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
function of junction temperature, typical
values.
MRA920
20
handbook, halfpage
C
rs
(pF)
10
0
0
10
20
30
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 1 kΩ.
RF performance in CW operation in a common source class-B test circuit.
Zi
(Ω)
(note 1)
f
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
ZL
(Ω)
MODE OF OPERATION
(MHz)
CW, class-B
175
175
28
50
50
30
12
> 13
typ. 15.5
< 50
typ. 67
2.0 − j2.7
3.9 + j4.4
3.8 + j1.3
12.5
typ. 12
typ. 66
2.4 − j2.5
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under
the following conditions:
Th = 25 °C; Rth mb-h = 0.3 K/W; at rated load power.
MGP172
MEA736
20
100
60
handbook, halfpage
handbook, halfpage
P
L
η
G
p
(dB)
(W)
50
D
G
p
(%)
η
D
40
10
50
30
20
0
0
10
0
10
20
30
40
50
0.6
1.2
1.8
2.4
P
(W)
L
P
(W)
IN
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.9 Power gain and efficiency as functions of
load power, typical values.
Fig.10 Load power as a function of input power,
typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP173
MEA737
20
20
100
handbook, halfpage
handbook, halfpage
G
p
(dB)
η
P
L
(W)
D
(%)
η
D
G
p
10
50
10
0
0
0
0
0.6
1.2
1.8
2.4
0
10
20
P
L (W)
P
(W)
IN
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
Class-B operation; VDS = 12.5 V; IDQ = 50 mA;
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
f = 175 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain and efficiency as functions of
load power, typical values.
Fig.12 Load power as a function of input power,
typical values.
C7
C9
Z
i
L3
D.U.T.
L6
50 Ω
output
C1
L2
L1
50 Ω
input
C8
C10
C2
L4
R1
C3
C5
C6
R2
R3
C4
L5
+V
GG
+V
DD
MGP174
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
List of components (class-B test circuit)
COMPONENT
C1
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
film dielectric trimmer
4 to 40 pF
5 to 60 pF
100 pF
2222 809 07008
2222 809 07011
2222 854 13101
2222 852 47104
2222 680 10101
C2, C8
C3
film dielectric trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
C4, C6
C5
100 nF
100 pF
C7
multilayer ceramic chip capacitor
(note 1)
18 pF
C9
multilayer ceramic chip capacitor
(note 1)
27 pF
C10
L1
multilayer ceramic chip capacitor
(note 1)
24 pF
3 turns enamelled 0.5 mm copper
wire
13.5 nH
length 3.5 mm
int. dia. 2 mm
leads 2 × 2 mm
L2, L3
L4
stripline (note 2)
30 Ω
10 × 6 mm
6 turns enamelled 1.5 mm copper
wire
98 nH
length 12.5 mm
int. dia. 5 mm
leads 2 × 2 mm
L5
L6
grade 3B Ferroxcube RF choke
4312 020 36640
2 turns enamelled 1.5 mm copper
wire
24.5 nH
length 4 mm
int. dia. 5 mm
leads 2 × 2 mm
R1
R2
R3
metal film resistor
metal film resistor
metal film resistor
1 kΩ
1 MΩ
10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 inch.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
135
copper straps
rivets
72
copper strap
copper straps
+V
GG
L5
+V
DD
C3
R2
C4
C5
C6
R3
C8
L4
R1
L1
C1
C2
L2
L3
C9
C7
L6
C10
MGP175
The circuit and components are situated on one side of the epoxy fiber-glass board; the other side is unetched
copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper
straps under the sources and around the edges, to provide a direct contact between the copper on the
component side and the ground plane.
Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
MGP177
MGP178
40
16
handbook, halfpage
handbook, halfpage
Z
Z
i
L
(Ω)
(Ω)
30
12
R
X
L
20
8
4
−x
i
L
10
r
i
0
0
20
40
60
80
100
120
20
40
60
80
100
120
f (MHz)
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency
(series components), typical values.
Fig.16 Load impedance as a function of frequency
(series components), typical values.
MGP179
40
handbook, halfpage
G
p
(dB)
30
20
10
0
handbook, halfpage
Z
Z
L
MBA379
i
20
40
60
80
100
120
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W.
Fig.17 Definition of MOS impedance.
Fig.18 Power gain as a function of frequency,
typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12
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