933817070112 [NXP]
TRANSISTOR 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, CERAMIC PACKAGE-4, FET General Purpose Power;
| 型号： | 933817070112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 6 A, 65 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, CERAMIC PACKAGE-4, FET General Purpose Power 局域网 放大器 晶体管 |
| 文件： | 总12页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF145
HF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
FEATURES
PIN CONFIGURATION
• High power gain
k, halfpage
• Low noise figure
1
4
• Good thermal stability
• Withstands full load mismatch.
d
DESCRIPTION
g
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
s
MBB072
2
3
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123 flange envelope,
with a ceramic cap. All leads are
isolated from the flange. Matched
gate-source voltage (VGS) groups are
available on request.
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
PINNING - SOT123
PIN
1
DESCRIPTION
WARNING
drain
Product and environmental safety - toxic materials
2
source
gate
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
3
4
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
ηD
(%)
(note 1)
f
VDS
(V)
ID
(A)
PL
(W)
Gp
(dB)
d3
(dB)
MODE OF OPERATION
(MHz)
SSB, class-A
28
28
28
28
1.3
8 (PEP)
> 24
−
< −40
SSB, class-AB
−
30 (PEP)
typ. 20
typ. 40
typ. −35
Note
1. 2-tone efficiency.
September 1992
2
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDSS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
65
UNIT
−
−
−
−
V
±VGSS
ID
gate-source voltage
DC drain current
20
6
V
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
68
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
2.6 K/W
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
0.3 K/W
MRA901
MGP035
10
100
handbook, halfpage
handbook, halfpage
P
tot
I
D
(W)
(A)
(1)
(2)
80
(1)
1
60
40
(2)
−1
10
20
2
1
10
10
0
40
80
120
160
V
(V)
DS
T
(°C)
h
(1) Short-time operation during mismatch.
(2) Continuous operation.
(1) Current is this area may be limited by RDS(on)
.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
ID = 10 mA; VGS = 0
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
65
−
−
−
−
−
−
−
V
IDSS
VGS = 0; VDS = 28 V
±VGS = 20 V; VDS = 0
ID = 10 mA; VDS = 10 V
2
mA
µA
V
IGSS
−
1
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 10 mA; VDS = 10 V
matched devices
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 1.5 A; VDS = 10 V
1.2
−
−
−
S
RDS(on)
IDSX
Cis
ID = 1.5 A; VGS = 10 V
0.4
10
125
75
7
0.75
−
Ω
VGS = 10 V; VDS = 10 V
−
A
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
VGS = 0; VDS = 28 V; f = 1 MHz
−
−
pF
pF
pF
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
MGP036
MGP037
4
12
handbook, halfpage
T.C.
handbook, halfpage
T = 25 °C
j
(mV/K)
I
D
(A)
2
125 °C
8
0
−2
−4
4
0
−6
2
3
4
0
5
10
15
20
10
10
10
10
V
(V)
I
(mA)
GS
D
VDS = 10 V.
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
MGP039
MGP038
240
0.8
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS(on)
(Ω)
180
0.6
C
C
is
0.4
0.2
0
120
60
os
0
0
10
20
30
40
0
40
80
120
160
V
(V)
T (°C)
DS
j
ID = 1.5 A;
VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
MRA900
20
handbook, halfpage
C
rs
(pF)
10
0
0
10
20
30
V
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-A circuit.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
MODE OF
OPERATION
f
VDS
ID
PL
(W)
GP
(dB)
ZL
(Ω)
(MHz) (V) (A)
SSB, class-A
28
28
1.3
8 (PEP)
> 24
> −40
< −40
18.4 + j5.2
typ. 27
typ. −43
typ. −70
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MGP040
MGP041
30
−20
handbook, halfpage
handbook, halfpage
d
3
(dB)
G
p
(dB)
−30
28
−40
−50
26
24
0
−60
10
20
30
0
10
20
30
P
(W) PEP
P
(W) PEP
L
L
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
Class-A operation; VDS = 28 V; ID = 1.3 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
dotted line: Th = 70 °C.
Fig.9 Power gain as a function of load power,
typical values.
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
C5
C6
C9
L3
D.U.T.
L5
output
50 Ω
C2
C1
L2
L1
input
50 Ω
C10
R1
C4
C3
L4
C7
C8
R2
L6
+V
D
+V
G
C11
C12
MGP042
f = 28 MHz.
Fig.11 Test circuit for class-A operation.
List of components (class-A test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C3, C8, C9
C2, C10
film dielectric trimmer
7 to 100 pF
39 pF
2222 809 07015
multilayer ceramic chip capacitor
(note 1)
C4, C7
C5, C6
multilayer ceramic chip capacitor
100 nF
27 pF
2222 852 47104
multilayer ceramic chip capacitor
(note 1)
C11
C12
L1
multilayer ceramic chip capacitor
electrolytic capacitor
3 × 100 nF
2222 852 47104
2222 030 38228
2.2 µF, 63 V
12 turns enamelled 0.5 mm copper 307 nH
wire
length 8 mm;
int. dia. 4 mm
L2, L3
L4
stripline (note 2)
30 Ω
length 15 × 6 mm
14 turns enamelled 1 mm copper
wire
1039 nH
length 14 mm;
int. dia. 9 mm
L5
L6
9 turns enamelled 1 mm copper wire 305 nH
length 10 mm;
int. dia. 6 mm
grade 3B Ferroxcube wideband HF
choke
4312 020 36640
R1
R2
0.25 W metal film resistor
0.25 W metal film resistor
26 Ω
10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
September 1992
7
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 34 Ω; unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
MODE OF
OPERATION
f
VDS IDQ
PL
(W)
Gp
(dB)
ηD
(%)
ZL
( )
Ω
(MHz) (V) (A)
SSB, class-AB
Note
28
28 0.25 30 (PEP) typ. 20
typ. 40
typ. −35
typ. −40
8.9 + j1.0
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
PL = 30 W single tone under the following conditions:
VDS = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0.3 K/W at
rated load power.
MGP043
MGP044
22
60
handbook, halfpage
handbook, halfpage
G
p
(dB)
η
D
(%)
20
40
18
20
16
0
0
0
20
40
60
20
40
60
P
(W)
P
(W)
L
L
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
dotted line: Th = 70 °C.
Fig.12 Power gain as a function of load power,
typical values.
Fig.13 Two tone efficiency as a function of load
power, typical values.
September 1992
8
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
C4
C7
C9
L3
L5
D.U.T.
output
C1
L2
50 Ω
L1
input
50 Ω
C10
C5
R1
C3
C2
L4
C8
C6
R2
L6
+V
D
+V
G
C11
C12
MGP045
f = 28 MHz.
Fig.14 Test circuit for class-AB operation.
List of components (class-AB test circuit)
COMPONENT
C1, C2
DESCRIPTION
film dielectric trimmer
VALUE
DIMENSIONS
CATALOGUE NO.
5 to 60 pF
100 nF
27 pF
2222 809 07011
2222 852 47104
C3, C6
C4, C5
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
(note 1)
C7, C10
multilayer ceramic chip capacitor
(note 1)
39 pF
C8, C9
C11
film dielectric trimmer
7 to 100 pF
3 × 100 nF
2.2 µF, 63 V
2222 809 07015
2222 852 47104
2222 030 38228
multilayer ceramic chip capacitor
electrolytic capacitor
C12
L1
13 turns enamelled 0.5 mm copper 415 nH
wire
length 10 mm;
int. dia. 5 mm
L2, L3
L4
stripline (note 2)
30 Ω
length 15 × 6 mm
10 turns enamelled 1 mm copper
wire
390 nH
length 13 mm;
int. dia. 7 mm
L5
L6
9 turns enamelled 1 mm copper wire 245 nH
length 10 mm;
int. dia. 5 mm
grade 3B Ferroxcube wideband HF
choke
4312 020 36640
R1
R2
0.5 W metal film resistor
0.25 W metal film resistor
34 Ω
10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1⁄16 mm.
September 1992
9
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
MGP046
MGP047
−20
−20
handbook, halfpage
handbook, halfpage
d
3
d
5
(dB)
(dB)
−30
−30
−40
−50
−40
−50
0
20
40
60
0
20
40
60
P
(W)
P (W)
L
L
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
Rth mb-h = 0.3 K/W; f = 28 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
dotted line: Th = 70 °C.
Fig.15 Third order intermodulation distortion as a
function of load power, typical values.
Fig.16 Fifth order intermodulation distortion as a
function of load power, typical values.
Table 1
Input impedance as a function of frequency
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C;
MGP048
21
handbook, halfpage
Rth mb-h = 0.3 K/W; R1 = 34 Ω; ZL = 8.9 + j1 Ω.
G
p
(dB)
f
Zi
(MHz)
(Ω)
1.5
3.0
6.0
32.9 − j2.2
20
32.4 − j4.3
30.7 − j8.1
27.4 − j11.9
32.9 − j14.6
18.5 − j15.4
15.1 − j15.3
12.5 − j14.6
10
15
20
25
30
19
0
6
12
18
24
30
f (MHz)
Class-AB operation; VDS = 28 V; IDQ = 0.25 A;
PL = 30 W; Th = 25 °C; Rth mb-h = 0.3 K/W;
R1 = 34 Ω; ZL = 8.9 + j1 Ω.
Fig.17 Power gain as a function of frequency,
typical values.
September 1992
10
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
September 1992
11
Philips Semiconductors
Product specification
HF power MOS transistor
BLF145
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
12
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