933818500113 [NXP]
2.08A, 600V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 933818500113 |
| 厂家： | 
NXP |
| 描述： | 2.08A, 600V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2 超快软恢复二极管 快速软恢复二极管 局域网 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BYM26 series
Fast soft-recovery
controlled avalanche rectifiers
1996 May 24
Product specification
Supersedes data of February 1994
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
construction. This package is
FEATURES
DESCRIPTION
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
• Glass passivated
Rugged glass SOD64 package,
using a high temperature alloyed
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Guaranteed avalanche energy
absorption capability
MAM104
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYM26A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYM26B
BYM26C
600
BYM26D
800
BYM26E
1000
1200
1400
BYM26F
BYM26G
VR
continuous reverse voltage
BYM26A
−
−
−
−
−
−
−
200
400
V
V
V
V
V
V
V
BYM26B
BYM26C
600
BYM26D
800
BYM26E
1000
1200
1400
BYM26F
BYM26G
IF(AV)
average forward current
BYM26A to E
BYM26F and G
Ttp = 55 °C; lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
2.30
2.40
A
A
IF(AV)
average forward current
BYM26A to E
Tamb = 65 °C; PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
−
−
1.05
1.00
A
A
BYM26F and G
1996 May 24
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IFRM
repetitive peak forward current
BYM26A to E
Ttp = 55 °C; see Figs 6 and 7
−
−
19
21
A
A
BYM26F and G
IFRM
repetitive peak forward current
BYM26A to E
Tamb = 65 °C; see Figs 8 and 9
−
−
−
8.0
8.5
45
A
A
A
BYM26F and G
IFSM
non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
−
10 mJ
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175 °C
+175 °C
see Figs 12 and 13
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 2 A; Tj = Tj max
MIN.
TYP.
MAX.
UNIT
VF
;
see Figs 14 and 15
BYM26A to E
BYM26F and G
forward voltage
BYM26A to E
−
−
−
−
1.34
1.34
V
V
VF
IF = 2 A;
see Figs 14 and 15
−
−
−
−
2.65
2.30
V
V
BYM26F and G
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYM26A
BYM26B
300
500
−
−
−
−
−
−
−
−
−
−
V
V
BYM26C
700
−
V
BYM26D
900
−
V
BYM26E
1100
1300
1500
−
−
V
BYM26F
−
V
BYM26G
reverse current
−
V
IR
VR = VRRMmax
see Fig.16
;
;
10
µA
VR = VRRMmax
−
−
150
µA
Tj = 165 °C; see Fig.16
trr
reverse recovery time
BYM26A to C
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.20
−
−
−
−
−
−
30
75
ns
ns
ns
BYM26D and E
BYM26F and G
150
1996 May 24
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
SYMBOL
PARAMETER
diode capacitance
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cd
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
BYM26A to C
BYM26D and E
BYM26F and G
−
−
−
85
75
65
−
−
−
pF
pF
pF
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
maximum slope of reverse recovery
current
dIR
--------
dt
BYM26A to C
BYM26D and E
BYM26F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
see Fig.21
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
25
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
K/W
K/W
75
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
GRAPHICAL DATA
MSA875
MBD421
2.4
3
handbook, halfpage
handbook, halfpage
I
F(AV)
I
F(AV)
(A)
(A)
1.8
20 15 10 lead length (mm)
lead length 10 mm
2
1.2
0.6
1
0
0
0
o
0
100
200
100
200
T
( C)
o
tp
T
tp
( C)
BYM26A to E
BYM26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Fig.2 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3 Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
MLB490
MBD416
2.0
2.0
handbook, halfpage
handbook, halfpage
I
I
F(AV)
F(AV)
(A)
(A)
1.6
1.6
1.2
0.8
0.4
0
1.2
0.8
0.4
0
0
100
200
0
100
200
o
o
T
( C)
T
( C)
amb
amb
BYM26A to E
BYM26F and G
a = 1.42; VR = VRRMmax; δ = 0.5.
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.5 Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 24
5
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
MSA879
20
I
FRM
(A)
= 0.05
δ
16
12
0.1
0.2
8
4
0
0.5
1
2
1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
BYM26A to E
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD449
25
I
FRM
(A)
20
= 0.05
δ
15
10
5
0.1
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM26F and G
Ttp = 55°C; Rth j-tp = 25 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24
6
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
MSA878
10
I
FRM
(A)
8
= 0.05
δ
6
4
2
0
0.1
0.2
0.5
1
2
1
2
3
4
10
10
1
10
10
10
10
t
(ms)
p
BYM26A to E
Tamb = 65 °C; Rth j-a = 75 K/W.
RRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.
V
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MBD443
10
I
FRM
(A)
8
= 0.05
δ
6
0.1
4
2
0.2
0.5
1
0
10
2
1
2
3
4
10
1
10
10
10
10
t
(ms)
p
BYM26F and G
Tamb = 65 °C; Rth j-a = 75 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 May 24
7
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
MSA876
MBD430
5
5
4
3
P
(W)
P
(W)
a = 3
2.5
2
1.57
1.42
a = 3
2.5
2
1.57 1.42
4
3
2
1
0
2
1
0
0
0.6
1.2
1.8
I
2.4
(A)
0
0.6
1.2
1.8
I
2.4
(A)
F(AV)
F(AV)
BYM26A to E
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
BYM26F and G
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
MSA873
MLB601
200
200
handbook, halfpage
handbook, halfpage
T
j
(°C)
T
o
j
( C)
100
100
A
B
C
D
E
F
G
0
0
0
400
800
1200
0
1000
2000
V
(V)
V
(V)
R
R
BYM26A to E
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
BYM26F and G
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
MSA877
MBD426
10
10
handbook, halfpage
handbook, halfpage
I
I
F
(A)
F
(A)
8
8
6
4
2
0
6
4
2
0
0
0
2
4
6
2
4
V
(V)
V
(V)
F
F
BYM26A to E
BYM26F and G
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
Fig.15 Forward current as a function of forward
voltage; maximum values.
MGC549
MSA874
3
2
10
10
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
BYM26A,B,C
(pF)
2
10
10
BYM26D,E
10
1
1
3
2
0
100
200
1
10
10
10
T (°C)
V
(V)
j
R
BYM26A to E
f = 1 MHz; Tj = 25 °C.
VR = VRRMmax
.
Fig.16 Reverse current as a function of junction
temperature; maximum values.
Fig.17 Diode capacitance as a function of reverse
voltage; typical values.
1996 May 24
9
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
MBD435
2
10
50
25
handbook, halfpage
handbook, halfpage
C
d
(pF)
7
50
10
2
3
1
2
3
1
10
10
10
MGA200
V
(V)
R
BYM26F and G
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage; typical values.
Fig.19 Device mounted on a printed-circuit board.
DUT
I
F
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.20 Test circuit and reverse recovery time waveform and definition.
10
1996 May 24
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
I
ndbook, halfpage
F
dI
F
dt
t
rr
t
10%
dI
R
dt
100%
I
R
MGC499
Fig.21 Reverse recovery definitions.
1996 May 24
11
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
PACKAGE OUTLINE
k
a
1.35
max
4.5
max
MBC049
28 min
5.0 max
28 min
Dimensions in mm.
The marking band indicates the cathode.
Fig.22 SOD64.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24
12
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