2N7002P [NXP]
60 V, 0.3 A N-channel Trench MOSFET; 60 V ， 0.3 A N沟道沟槽MOSFET
| 型号： | 2N7002P |
| 厂家： | 
NXP |
| 描述： | 60 V, 0.3 A N-channel Trench MOSFET |
| 文件： | 总16页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002P
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 19 April 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
60
Unit
V
VDS
VGS
ID
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
-
-
-
-
-
gate-source voltage
drain current
±20
300
V
Tamb = 25 °C;
mA
VGS = 10 V
RDSon
drain-source on-state
resistance
Tj = 25 °C;
-
1
1.6
Ω
VGS = 10 V;
ID = 500 mA
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
S
D
D
3
2
source
drain
3
G
1
2
mbb076
S
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
2N7002P
TO-236AB plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
2N7002P
LW*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
VDS
VGS
ID
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
-
60
gate-source voltage
drain current
±20
V
VGS = 10 V
Tamb = 25 °C
Tamb = 100 °C
-
-
-
300
180
1.2
mA
mA
A
IDM
peak drain current
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
2N7002P_1
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Product data sheet
Rev. 01 — 19 April 2010
2 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
250
Unit
mW
mW
mW
°C
[1]
[2]
Ptot
total power dissipation
Tamb = 25 °C
-
-
-
350
Tsp = 25 °C
830
Tj
junction temperature
ambient temperature
storage temperature
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
Source-drain diode
IS
source current
peak source current
Tamb = 25 °C
-
-
300
1.2
mA
A
ISM
Tamb = 25 °C;
single pulse; tp ≤ 10 μs
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa001
017aaa002
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
(°C)
−25
25
75
125
T
amb
175
(°C)
T
amb
Ptot
-----------------------
ID
-------------------
Pder
=
× 100 %
Ider
=
× 100 %
Ptot(25°C)
ID(25°C)
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
3 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa014
10
I
D
(A)
1
(1)
(2)
−1
10
10
10
(3)
(4)
(5)
(6)
−2
−3
10
−1
2
1
10
10
V
DS
(V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 °C
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
thermal resistance from
junction to ambient
in free air
-
-
-
325
500
350
150
K/W
K/W
K/W
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
4 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa015
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0
0.05
0.02
0.01
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
2
0.33
0.2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
5 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown ID = 10 μA; VGS = 0 V
voltage
60
-
-
V
V
gate-source threshold
voltage
ID = 250 μA; VDS = VGS
1.1
1.75 2.4
drain leakage current
VDS = 60 V; VGS = 0 V
Tj = 25 °C
-
-
-
-
-
-
1
μA
μA
nA
Tj = 150 °C
10
100
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
[1]
[1]
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 500 mA
VDS = 10 V; ID = 200 mA
-
1.3
1
2
Ω
-
1.6
-
Ω
gfs
forward
0.2
-
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
-
-
-
-
-
-
0.5
0.1
0.3
0.6
nC
nC
nC
pF
pF
pF
-
-
VGS = 0 V; VDS = 10 V;
f = 1 MHz
30.2 50
Coss
Crss
6.6
3.8
-
-
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDD = 50 V;
RL = 250 Ω;
VGS = 10 V;
RG = 6 Ω
-
-
-
-
3
20
-
ns
ns
ns
ns
4
turn-off delay time
fall time
10
5
20
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V
0.47 0.88 1.3
V
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
6 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa017
017aaa018
−3
−4
−5
−6
0.7
D
(A)
0.6
10
V
GS
= 4.5 V
I
4.0 V
I
D
(A)
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
3.5 V
3.0 V
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0
1
2
3
(V)
V
(V)
DS
GS
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa019
017aaa020
10.0
6.0
R
(Ω)
DSon
R
(Ω)
DSon
(1)
(2)
7.5
5.0
2.5
0.0
4.0
2.0
0.0
(1)
(2)
(3)
(5)
(4)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
GS
10.0
(V)
I
(A)
D
Tamb = 25 °C
I
D = 500 mA
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
7 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa021
017aaa022
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
−60
0
60
120
180
(°C)
T
amb
GS
VDS > ID × RDSon
RDSon
-----------------------------
RDSon(25°C)
a =
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
017aaa023
017aaa024
2
3.0
10
V
GS(th)
(V)
(1)
(2)
(3)
(1)
C
(pF)
2.0
1.0
0.0
(2)
10
(3)
1
10
−1
2
−60
0
60
120
180
(°C)
1
10
10
T
amb
V
DS
(V)
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) Ciss
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
8 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
017aaa025
5.0
V
GS
(V)
4.0
V
DS
I
D
3.0
2.0
1.0
0.0
V
GS(pl)
V
GS(th)
V
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
0.0
0.2
0.4
0.6
Q
G
(nC)
003aaa508
ID = 300 mA; VDD = 6 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa026
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
SD
(V)
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
9 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
10 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
11 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 19. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 20. Wave soldering footprint SOT23 (TO-236AB)
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
12 of 16
2N7002P
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60 V, 0.3 A N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002P_1
20100419
Product data sheet
-
-
2N7002P_1
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 19 April 2010
13 of 16
2N7002P
NXP Semiconductors
60 V, 0.3 A N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
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suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
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Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
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may be subject to export control regulations. Export might require a prior
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
2N7002P_1
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Product data sheet
Rev. 01 — 19 April 2010
14 of 16
2N7002P
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60 V, 0.3 A N-channel Trench MOSFET
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002P_1
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60 V, 0.3 A N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 April 2010
Document identifier: 2N7002P_1
相关型号：
2N7002S
SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
ETC
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