2N7002P,235 [NXP]
60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin;
| 型号： | 2N7002P,235 |
| 厂家： | 
NXP |
| 描述： | 60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified
Trench MOSFET technology
Very fast switching
Logic-level compatible
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tamb = 25 °C
-
-
-
-
60
V
VGS
ID
gate-source
voltage
-20
-
20
V
[1]
drain current
VGS = 10 V; Tamb = 25 °C
360 mA
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 500 mA;
Tj = 25 °C; pulsed; tp ≤ 300 µs;
δ ≤ 0.01
-
1
1.6
Ω
on-state
resistance
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
3
D
2
source
drain
3
G
1
2
mbb076
S
SOT23 (TO-236AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2N7002P
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
2N7002P
Marking code[1]
LW%
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tamb = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
360
280
1.2
mA
mA
A
-
IDM
Ptot
peak drain current
-
[2]
[1]
total power dissipation
-
350
420
1140
150
150
150
mW
mW
mW
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
°C
°C
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
360
mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
2 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001
017aaa002
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
T
175
(°C)
−25
25
75
125
175
(°C)
amb
T
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
017aaa014
10
I
D
(A)
1
(1)
(2)
−1
10
10
10
(3)
(4)
(5)
−2
−3
(6)
−1
2
10
1
10
10
V
DS
(V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 °C
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
310
260
Max
370
300
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
115
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa015
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0
0.05
0.02
0.01
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa016
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
2
0.33
0.2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
4 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.1
1.75
2.4
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
Ω
-
10
100
100
2
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
1.3
VGS = 10 V; ID = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
-
-
1
1.6
-
Ω
gfs
forward
VDS = 10 V; ID = 200 mA; pulsed;
400
mS
transconductance
tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = 300 mA; VDS = 30 V; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.6
0.2
0.2
30
7
0.8
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VGS = 0 V; VDS = 10 V; f = 1 MHz;
Tj = 25 °C
50
-
Coss
Crss
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 50 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
3
6
-
ns
ns
ns
ns
4
turn-off delay time
fall time
10
5
20
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.75
1.1
V
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
017aaa017
017aaa018
−3
−4
−5
−6
0.7
10
V
= 4.0 V
GS
I
D
(A)
0.6
3.5 V
I
D
(A)
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
3.25 V
3.0 V
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0
1
2
3
(V)
V
(V)
GS
DS
Tamb = 25 °C
Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa019
017aaa020
10.0
6.0
R
(Ω)
DSon
R
DSon
(1)
(Ω)
7.5
5.0
2.5
0.0
(2)
4.0
2.0
0.0
(1)
(2)
(3)
(5)
(4)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
10.0
(V)
I
(A)
D
GS
T
amb = 25 °C
ID = 500 mA
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
6 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
017aaa021
017aaa022
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
(2)
(1)
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
−60
0
60
120
180
(°C)
T
GS
amb
VDS > ID × RDSon
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of ambient temperature; typical
values
017aaa023
017aaa024
2
3.0
10
V
GS(th)
(V)
(1)
(2)
(3)
(1)
C
(pF)
2.0
1.0
0.0
(2)
10
(3)
1
10
−1
2
−60
0
60
120
180
(°C)
1
10
10
T
V
(V)
DS
amb
f = 1 MHz; VGS = 0 V
(1) Ciss
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
7 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
017aaa025
5.0
V
DS
V
GS
(V)
I
4.0
D
V
GS(pl)
3.0
2.0
1.0
0.0
V
V
GS(th)
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0.0
0.2
0.4
0.6
0.8
Q
(nC)
G
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa026
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
8 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
9 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 18. Package outline SOT23 (TO-236AB)
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
10 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
11 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
2N7002P v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100729
Product data sheet
-
2N7002P_1
• Correction of thermal values.
• Correction of various characteristics values including related graphs.
20100419 Product data sheet
2N7002P_1
-
-
2N7002P
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
12 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
2N7002P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
13 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002P
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
14 of 15
2N7002P
NXP Semiconductors
60 V, 360 mA N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 July 2010
Document identifier: 2N7002P
相关型号：
2N7002S
SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
ETC
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