2N7002PT,115 [NXP]
2N7002PT - 60 V, 310 mA N-channel Trench MOSFET SC-75 3-Pin;
| 型号： | 2N7002PT,115 |
| 厂家： | 
NXP |
| 描述： | 2N7002PT - 60 V, 310 mA N-channel Trench MOSFET SC-75 3-Pin |
| 文件： | 总17页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 2 July 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Tamb = 25 C
Tamb = 25 C
Min
Typ
Max
60
Unit
V
VDS
VGS
ID
drain-source voltage
-
-
-
-
-
-
gate-source voltage
drain current
20
310
V
[1]
Tamb = 25 C;
mA
VGS = 10 V
RDSon
drain-source on-state
resistance
Tj = 25 C;
VGS = 10 V;
ID = 500 mA
-
1
1.6
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
S
D
D
3
2
source
drain
3
G
1
2
mbb076
S
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
2N7002PT
SC-75
plastic surface-mounted package; 3 leads
SOT416
4. Marking
Table 4.
Marking codes
Type number
Marking code
2N7002PT
Z1
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Tamb = 25 C
Tamb = 25 C
VGS = 10 V
Min
Max
Unit
V
VDS
VGS
ID
drain-source voltage
-
-
60
gate-source voltage
drain current
20
V
[1]
Tamb = 25 C
Tamb = 100 C
-
-
-
310
240
1.2
mA
mA
A
IDM
peak drain current
Tamb = 25 C;
single pulse; tp 10 s
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
2 of 16
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
250
Unit
mW
mW
mW
C
[2]
[1]
Ptot
total power dissipation
Tamb = 25 C
-
-
-
300
Tsp = 25 C
770
Tj
junction temperature
ambient temperature
storage temperature
150
Tamb
Tstg
55
65
+150
+150
C
C
Source-drain diode
IS source current
[1]
Tamb = 25 C
-
310
mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
017aaa002
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
(°C)
−25
25
75
125
175
(°C)
T
T
amb
amb
Ptot
-----------------------
ID
-------------------
Pder
=
100 %
Ider
=
100 %
Ptot25C
ID25C
Fig 1. Normalized total power dissipation as a
function of ambient temperature
Fig 2. Normalized continuous drain current as a
function of ambient temperature
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
3 of 16
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa030
10
I
D
(A)
1
(1)
(2)
−1
10
10
10
(3)
(4)
(5)
−2
(6)
−3
−1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
(1) tp = 100 s
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 C
(5) tp = 100 ms
(6) DC; Tamb = 25 C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
440
360
-
Max Unit
[1]
[2]
thermal resistance from
junction to ambient
in free air
-
-
-
510
415
160
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002PT
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 July 2010
4 of 16
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa031
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa032
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
0.25
10
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002PT
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 July 2010
5 of 16
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown ID = 10 A; VGS = 0 V
voltage
60
-
-
V
V
gate-source threshold
voltage
ID = 250 A; VDS = VGS
1.1
1.75 2.4
drain leakage current
VDS = 60 V; VGS = 0 V
Tj = 25 C
-
-
-
-
-
-
1
A
A
nA
Tj = 150 C
10
100
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V
[1]
[1]
RDSon
drain-source on-state
resistance
VGS = 5 V; ID = 50 mA
VGS = 10 V; ID = 500 mA
VDS = 10 V; ID = 200 mA
-
-
-
1.3
1
2
1.6
-
gfs
forward
400
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 300 mA;
VDS = 30 V;
VGS = 4.5 V
-
-
-
-
-
-
0.6
0.2
0.2
30
7
0.8
nC
nC
nC
pF
pF
pF
-
-
VGS = 0 V; VDS = 10 V;
f = 1 MHz
50
-
Coss
Crss
reverse transfer
capacitance
4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDD = 50 V;
RL = 250 ;
VGS = 10 V;
RG = 6
-
-
-
-
3
6
-
ns
ns
ns
ns
4
turn-off delay time
fall time
10
5
20
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V
0.47 0.75 1.1
V
[1] Pulse test: tp 300 s; 0.01.
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa017
017aaa018
−3
−4
−5
−6
0.7
10
V
= 4.0 V
GS
I
D
(A)
0.6
3.5 V
I
D
(A)
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
3.25 V
3.0 V
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0
1
2
3
(V)
V
(V)
GS
DS
Tamb = 25 C
Tamb = 25 C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical
values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa019
017aaa020
10.0
6.0
R
(Ω)
DSon
R
DSon
(1)
(Ω)
7.5
5.0
2.5
0.0
(2)
4.0
2.0
0.0
(1)
(2)
(3)
(5)
(4)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
10.0
(V)
I
(A)
D
GS
Tamb = 25 C
(1) VGS = 3.25 V
(2) GS = 3.5 V
I
D = 500 mA
(1) Tamb = 150 C
(2) amb = 25 C
V
T
(3) VGS = 4 V
(4) VGS = 5 V
(5)
VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa021
017aaa022
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
(2)
(1)
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
−60
0
60
120
180
(°C)
T
GS
amb
VDS > ID RDSon
RDSon
-----------------------------
RDSon25C
a =
(1) Tamb = 25 C
(2) Tamb = 150 C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
017aaa023
017aaa024
2
3.0
10
V
GS(th)
(V)
(1)
(2)
(3)
(1)
C
(pF)
2.0
1.0
0.0
(2)
10
(3)
1
10
−1
2
−60
0
60
120
180
(°C)
1
10
10
T
V
(V)
DS
amb
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
(1) Ciss
(1) maximum values
(2) typical values
(2) Coss
(3) Crss
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa025
5.0
V
GS
(V)
4.0
V
DS
I
D
3.0
2.0
1.0
0.0
V
GS(pl)
V
V
GS(th)
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
0.0
0.2
0.4
0.6
0.8
Q
(nC)
G
003aaa508
ID = 300 mA; VDS = 30 V; Tamb = 25 C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa026
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 C
(2) Tamb = 25 C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
2N7002PT
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Product data sheet
Rev. 1 — 2 July 2010
10 of 16
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NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
w
M
B
1
p
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT416
SC-75
Fig 18. Package outline SOT416 (SC-75)
2N7002PT
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Product data sheet
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60 V, 310 mA N-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of plastic surface-mounted package; 3 leads
SOT416
2.2
1.7
1
0.85
2
0.5
(3×)
0.6
(3×)
1.3
solder land plus solder paste
solder resist
occupied area
Dimensions in mm
sot416_fr
Fig 19. Reflow soldering footprint SOT416 (SC-75)
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60 V, 310 mA N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002PT v.1
20100702
Product data sheet
-
-
2N7002PT
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© NXP B.V. 2010. All rights reserved.
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60 V, 310 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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full information. For detailed and full information see the relevant full data
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Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
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Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
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Right to make changes — NXP Semiconductors reserves the right to make
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2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002PT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 2 July 2010
15 of 16
2N7002PT
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Quality information . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 July 2010
Document identifier: 2N7002PT
相关型号：
2N7002S
SURFACE MOUNT Dual N-Channel Enhancement MOS FET / VOLTAGE 60 Volts CURRENT 0.250 Ampere
ETC
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