NTE6409 [NTE]
Unijunction Transistor; 单结晶体管
| 型号： | NTE6409 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Unijunction Transistor |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE6409
Unijunction Transistor
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 2µA Max
D Low Emitter Reverse Current: 200nA Max
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2. Capacitor discharge: 10µF or less, 30V or less
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
Interbase Resistance
Symbol
η
Test Conditions
VB2B1 = 10V, Note 3
VB2B1 = 3V, IE = 0
Min Typ Max Unit
0.68
4.7
–
7.0
–
0.82
9.1
rBB
kΩ
Interbase Resistance
αrBB
VB2B1 = 3V, IE = 0, TA = –55° to +125°C 0.1
0.9 %/°C
Temperature Coefficient
Emitter Saturation Voltage VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4
Modulated Interbase Current IB2(mod) VB2B1 = 10V, IE = 50mA
–
–
–
–
8
6
3.5
15
–
–
V
mA
µA
µA
mA
V
Emitter Reverse Current
Peak Point Emitter Current
Valley Point Current
IEB2O VB2E = 30V, IB1 = 0
0.005 0.2
IP
IV
VB2B1 = 25V
1
10
7
2
18
–
VB2B1 = 20V, RB2 = 100Ω, Note 4
Base–One Peak Pulse
VOB1
Voltage
Note 3. Intrinsic Standoff Ratio, η, is defined by the equation:
VP – VF
η =
VB2B1
Where: VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base–One Junction Diode Drop ([ 0.45V @ 10µA)
Note 4. Use pulse techniques: PW [ 300µs, Duty Cycle ≤ 2% to avoid internal heating due to inter-
base modulation which may result in erroneous readings.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base 1
Emitter
45°
Base 2/Case
.041 (1.05)
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