PSMN2R2-40BS_技术文档

PSMN2R2-40BS

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

Rev. 1 — 20 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC convertors

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

40

Unit

V

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

-

[1]

I_D

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

100

A

P_tot

T_j

total power dissipation

junction temperature

T_mb= 25 °C; see Figure 2

-

306

175

W

-55

°C

Static characteristics

R_DSon

drain-source on-state resistance V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 6

-

2.73

1.88

3.2

2.2

mΩ

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 6; see Figure 13

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 20 V;

see Figure 14; see Figure 15

-

25

-

nC

Q_G(tot)

130

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 100 A; V_sup≤ 40 V; unclamped;

R_GS= 50 Ω

-

1.24

J

[1] Continuous current is limited by package

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

G

D

S

D

gate

mb

D

S

2

drain^[1]

source

drain

3

G

mb

mbb076

2

1

3

SOT404 (D2PAK)

[1] It is not possible to make connection to pin 2

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PSMN2R2-40BS

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

4. Marking

Table 4.

Marking codes

Type number

PSMN2R2-40BS

Marking code

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

2 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

40

Unit

V

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_j≥ 25 °C; T_j≤ 175 °C; R_GS= 20 kΩ

-

V_DGR

V_GS

-

40

V

-20

20

V

[1]

I_D

V_GS= 10 V; T_mb= 100 °C; see Figure 1

V_GS= 10 V; T_mb= 25 °C; see Figure 1

pulsed; t_p≤ 10 µs; T_mb= 25 °C; see Figure 3

T_mb= 25 °C; see Figure 2

-

100

962

306

175

260

A

-

A

I_DM

peak drain current

-

A

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

peak soldering temperature

-

W

°C

-55

-

T_sld(M)

Source-drain diode

[1]

I_S

source current

peak source current

T_mb= 25 °C

-

100

962

A

I_SM

pulsed; t_p≤ 10 µs; T_mb= 25 °C

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-source

avalanche energy

V_GS= 10 V; T_j(init)= 25 °C; I_D= 100 A;

V_sup≤ 40 V; unclamped; R_GS= 50 Ω

-

1.24

J

[1] Continuous current is limited by package

003aag903

03aa16

120

300

I

D

(A)

250

P

(%)

der

80

200

150

100

40

(1)

50

0

50

100

150

200

0

50

100

150

200

T

( C)

°

T

(°C)

mb

Fig 1. Continuous drain current as a function of

mounting base temperature.

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

3 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

003aad316

10⁴

I_D

(A)

Limit R_DSon= V_DS/ I_D

10³

10²

10

t = 10

s

μ

p

100 μs

(1)

DC

1 ms

10 ms

100 ms

1

10^-1

1

10

10²

V_DS(V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

4 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

6. Thermal characteristics

Table 6.

Symbol

R_th(j-mb)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from junction to

mounting base

see Figure 4

-

0.25

0.5

K/W

R_th(j-a)

thermal resistance from junction to

ambient

Minimum foot print; mounted in a

printed circuit board

-

50

-

K/W

003aad100

1

Z_{th (j-mb)}

(K/W)

10^-1

10^-2

10^-3

10^-4

= 0.5

δ

0.2

0.1

0.05

0.02

t_p

δ =

P

T

single shot

t

t_p

T

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

1

10

t_p(s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

5 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

7. Characteristics

Table 7.

Tested to JEDEC standards where applicable.

Symbol Parameter Conditions

Static characteristics

Characteristics

Min

Typ

Max

Unit

V_(BR)DSS

drain-source breakdown voltage I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

36

40

-

V

-

V_GS(th)

gate-source threshold voltage

I_D= 1 mA; V_DS= V_GS; T_j= -55 °C;

see Figure 11

4.6

I_D= 1 mA; V_DS= V_GS; T_j= 175 °C;

see Figure 11

1

2

-

V

I_D= 1 mA; V_DS= V_GS; T_j= 25 °C;

see Figure 12; see Figure 11

3

4

I_DSS

drain leakage current

gate leakage current

V_DS= 40 V; V_GS= 0 V; T_j= 25 °C

V_DS= 40 V; V_GS= 0 V; T_j= 125 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

-

0.02

-

10

µA

nA

mΩ

200

100

3.2

I_GSS

10

R_DSon

drain-source on-state resistance V_GS= 10 V; I_D= 25 A; T_j= 100 °C;

see Figure 6

2.73

V_GS= 10 V; I_D= 25 A; T_j= 175 °C;

see Figure 13; see Figure 6

-

3.76

1.88

1

4.4

2.2

-

mΩ

Ω

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

see Figure 6; see Figure 13

R_G

internal gate resistance (AC)

f = 1 MHz

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

-

110

130

42

-

nC

I_D= 25 A; V_DS= 20 V; V_GS= 10 V;

see Figure 14; see Figure 15

Q_GS

gate-source charge

Q_GS(th)

pre-threshold gate-source

charge

24

Q_GS(th-pl)

post-threshold gate-source

charge

-

18

-

nC

Q_GD

gate-drain charge

-

25

-

nC

V

V_GS(pl)

gate-source plateau voltage

I_D= 25 A; V_DS= 20 V; see Figure 14;

see Figure 15

4.95

C_iss

C_oss

C_rss

t_d(on)

t_r

input capacitance

output capacitance

reverse transfer capacitance

turn-on delay time

rise time

V_DS= 20 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C; see Figure 16

-

8423

1671

814

-

pF

ns

V_DS= 20 V; R_L= 0.25 Ω; V_GS= 10 V;

R_G(ext)= 1.5 Ω

33.2

40.4

66.6

25.2

t_d(off)

t_f

turn-off delay time

fall time

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

6 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

Table 7.

Characteristics …continued

Tested to JEDEC standards where applicable.

Symbol

Source-drain diode

V_SDsource-drain voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_S= 25 A; V_GS= 0 V; T_j= 25 °C;

see Figure 17

-

0.85

53.7

80.75

1.2

V

t_rr

reverse recovery time

recovered charge

I_S= 25 A; dI_S/dt = -100 A/µs;

V_GS= 0 V; V_DS= 20 V

-

ns

nC

Q_r

I_S= 25 A; dI_S/dt = -100 A/µs;

V_GS= 0 V; V_DS= 20 V; T_j= 25 °C

003aad116

003aad117

300

I_D

6

20

10

6

V_GS(V) = 5.5

V_GS(V) =

5

5.5

R_DSon

(A)

250

(m

)

Ω

5

8

200

150

100

50

4

3

2

1

5

6

8

4.5

20

10

0

1

2

3

4

0

50

100

150

200

250

300

_D(A)

V

_DS(V)

I

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

7 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

003aad118

003aad122

12000

250

I_D

C_iss

C

(A)

(pf)

10000

200

150

100

50

8000

C_rss

175

C

25 C

°

6000

4000

2000

0

1.5

3

4.5

6

10^-1

1

10

V_GS(V)

V

_GS(V)

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

003aad123

003aad124

250

30

g_fs

R_DS(on)

(S)

(m

)

Ω

25

20

15

10

5

200

150

100

50

0

50

100

150

200

0

5

10

15

20

I_D(A)

V_GS(V)

Fig 9. Forward transconductance as a function of

drain current; typical values

Fig 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

8 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

003aad280

03aa35

−1

5

10

I

V

D

GS(th)

(V)

(A)

min

typ

max

−2

−3

−4

−5

−6

4

10

max

3

2

1

typ

min

0

−60

0

60

120

180

0

2

4

6

T (°C)

j

V

(V)

GS

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Sub-threshold drain current as a function of

gate-source voltage

003aad326

2.5

V

DS

a

2

I

D

V

GS(pl)

1.5

1

V

GS(th)

GS

V

Q

GS1

GS2

Q

GD

GS

0.5

0

Q

G(tot)

003aaa508

-60

0

60

120

180

T_j(°C)

Fig 13. Normalized drain-source on state resistance

factor as a function of junction temperature

Fig 14. Gate charge waveform definitions

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

9 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

003aad120

003aad121

10

V_GS

12000

C

(V)

(pF)

8

6

4

2

V_DS= 10 V

C_iss

8000

V_DS= 20V

4000

C_oss

C_rss

0

10^-1

0

1

10

10²

50

100

150

V_DS(V)

Q

_G(nC)

Fig 15. Gate-source voltage as a function of gate

charge; typical values

Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aad119

100

I_S

(A)

80

60

40

20

0

25 C

°

T = 175

C

°

j

0

0.2

0.4

0.6

0.8

1

V

_sd(V)

Fig 17. Source current as a function of source-drain voltage; typical values

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

10 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

8. Package outline

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

A

E

1

mounting

base

D

1

D

H

D

2

L

p

1

3

c

b

e

Q

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

D

E

A

b

UNIT

c

D

e

L

H

Q

1

p

D

max.

4.50

4.10

1.40

1.27

0.85

0.60

0.64

0.46

1.60

1.20

10.30

9.70

2.90 15.80 2.60

2.10 14.80 2.20

mm

11

2.54

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

05-02-11

06-03-16

SOT404

Fig 18. Package outline SOT404 (D2PAK)

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

11 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

9. Revision history

Table 8.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PSMN2R2-40BS v.1

20120320

Product data sheet

-

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

12 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

10. Legal information

10.1 Data sheet status

Document status^{[1] [2]}

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Right to make changes — Nexperia reserves the right to make

10.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

10.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with theTerms and conditions of commercial sale of Nexperia.

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

13 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

10.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. Nexperia

accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Nexperia’s warranty of the

11. Contact information

For more information, please visit:http://www.nexperia.com

For sales office addresses, please send an email to:salesaddresses@nexperia.com

PSMN2R2-40BS

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 1 — 20 March 2012

14 of 15

PSMN2R2-40BS

Nexperia

N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK

12. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

2

3

4

5

6

7

8

9

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

10

Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

10.1

10.2

10.3

10.4

11

Contact information. . . . . . . . . . . . . . . . . . . . . .14

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 20 March 2012


型号：	PSMN2R2-40BS
厂家：	Nexperia
描述：	N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAKProduction
文件：	总15页 (文件大小：812K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PSMN2R2-40BS [NEXPERIA]

相关型号：

PSMN2R2-40BS_15

PSMN2R2-40PS

PSMN2R2-40PS

PSMN2R2-40YSD

PSMN2R3-100SSE

PSMN2R3-80SSF

PSMN2R4-30MLD

PSMN2R4-30YLD

PSMN2R5-30YL

PSMN2R5-30YL,115

PSMN2R5-30YL_09

PSMN2R5-30YL_11