PSMN2R2-40PS [NEXPERIA]

N-channel 40 V 2.1 mΩ standard level MOSFETProduction;
PSMN2R2-40PS
型号: PSMN2R2-40PS
厂家: Nexperia    Nexperia
描述:

N-channel 40 V 2.1 mΩ standard level MOSFETProduction

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PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
22 February 2013  
Product data sheet  
1. General description  
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product  
is designed and qualified for use in a wide range of industrial, communications and  
domestic equipment.  
2. Features and benefits  
High efficiency due to low switching and conduction losses  
Suitable for standard level gate drive sources  
3. Applications  
DC-to-DC convertors  
Load switching  
Motor control  
Server power supplies  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
40  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tmb = 25 °C; VGS = 10 V; Fig. 3; Fig. 1  
-
-
-
-
-
-
100  
306  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 12  
[1]  
-
-
1.75  
25  
2.1  
-
mΩ  
nC  
VGS = 10 V; ID = 80 A; VDS = 20 V;  
Fig. 14; Fig. 15  
[1] Measured 3 mm from package.  
 
 
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
5. Pinning information  
Table 2.  
Pin  
Pinning information  
Symbol Description  
Simplified outline  
Graphic symbol  
mb  
D
S
1
G
D
S
D
gate  
2
drain  
source  
drain  
G
3
mbb076  
mb  
1
2 3  
TO-220AB (SOT78)  
6. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PSMN2R2-40PS  
TO-220AB  
plastic single-ended package; heatsink mounted; 1 mounting  
hole; 3-lead TO-220AB  
SOT78  
7. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
PSMN2R2-40PS  
PSMN2R2-40PS  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
40  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ  
-
VDGR  
VGS  
-
40  
V
-20  
20  
V
ID  
VGS = 10 V; Tmb = 100 °C; Fig. 1  
-
-
-
100  
100  
1122  
A
VGS = 10 V; Tmb = 25 °C; Fig. 3; Fig. 1  
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3  
A
IDM  
peak drain current  
A
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
2 / 13  
 
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
Symbol  
Ptot  
Parameter  
Conditions  
Min  
-
Max  
306  
175  
175  
Unit  
W
total power dissipation  
storage temperature  
junction temperature  
Tmb = 25 °C; Fig. 2  
Tstg  
-55  
-55  
°C  
Tj  
°C  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
-
-
100  
A
A
ISM  
pulsed; tp ≤ 10 µs; Tmb = 25 °C  
1122  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;  
Vsup ≤ 40 V; unclamped; RGS = 50 Ω  
-
1.24  
J
avalanche energy  
003aak896  
03aa16  
300  
250  
200  
150  
100  
50  
120  
I
D
(A)  
P
der  
(%)  
80  
40  
(1)  
0
0
0
50  
100  
150  
T (°C)  
200  
0
50  
100  
150  
200  
j
T
(°C)  
mb  
(1) Capped at 100 A due to package  
Fig. 2. Normalized total power dissipation as a  
function of mounting base temperature  
Fig. 1. Continuous drain current as a function of  
mounting base temperature  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
3 / 13  
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
003aad316  
104  
ID  
(A)  
Limit RDSon = VDS / ID  
103  
102  
10  
t = 10  
p
s
µ
100 µs  
(1)  
DC  
1 ms  
10 ms  
100 ms  
1
10-1  
1
10  
102  
VDS (V)  
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
9. Thermal characteristics  
Table 6.  
Symbol  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-mb)  
thermal resistance  
from junction to  
mounting base  
Fig. 4  
-
0.25  
0.5  
K/W  
003aad100  
1
Zth (j-mb)  
(K/W)  
10-1  
10-2  
10-3  
10-4  
= 0.5  
δ
0.2  
0.1  
0.05  
0.02  
tp  
δ =  
P
T
single shot  
t
tp  
T
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
1
10  
tp (s)  
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
4 / 13  
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
10. Characteristics  
Table 7.  
Characteristics  
Tested to JEDEC standards where applicable.  
Symbol  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
36  
40  
-
-
-
-
-
V
V
V
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;  
4.6  
voltage  
Fig. 10  
ID = 1 mA; VDS = VGS; Tj = 175 °C;  
Fig. 10  
1
2
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;  
Fig. 11; Fig. 10  
3
4
IDSS  
drain leakage current  
gate leakage current  
VDS = 40 V; VGS = 0 V; Tj = 25 °C  
VDS = 40 V; VGS = 0 V; Tj = 125 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
-
10  
µA  
µA  
nA  
nA  
mΩ  
-
200  
100  
100  
2.85  
IGSS  
-
-
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 100 °C;  
Fig. 12; Fig. 13  
2.4  
VGS = 10 V; ID = 25 A; Tj = 175 °C;  
Fig. 12; Fig. 13  
-
-
-
3.25  
1.75  
1
3.9  
2.1  
-
mΩ  
mΩ  
Ω
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 12  
[1]  
RG  
internal gate  
f = 1 MHz  
resistance (AC)  
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 0 A; VDS = 0 V; VGS = 10 V  
-
-
-
-
110  
130  
42  
-
-
-
-
nC  
nC  
nC  
nC  
ID = 80 A; VDS = 20 V; VGS = 10 V;  
Fig. 14; Fig. 15  
QGS  
gate-source charge  
QGS(th)  
pre-threshold gate-  
source charge  
24  
QGS(th-pl)  
post-threshold gate-  
source charge  
-
18  
-
nC  
QGD  
gate-drain charge  
-
-
25  
-
-
nC  
V
VGS(pl)  
gate-source plateau  
voltage  
ID = 80 A; VDS = 20 V; Fig. 14; Fig. 15  
4.95  
Ciss  
input capacitance  
output capacitance  
VDS = 20 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; Fig. 16  
-
-
8423  
1671  
-
-
pF  
pF  
Coss  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
5 / 13  
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Crss  
reverse transfer  
capacitance  
-
814  
-
pF  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 20 V; RL = 0.25 Ω; VGS = 10 V;  
RG(ext) = 1.5 Ω  
-
-
-
-
33.2  
40.4  
66.6  
25.2  
-
-
-
-
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
Source-drain diode  
VSD source-drain voltage  
trr  
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17  
-
-
0.85  
53.7  
1.2  
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;  
VDS = 20 V  
ns  
Qr  
recovered charge  
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;  
VDS = 20 V; Tj = 25 °C  
-
80.75  
-
nC  
[1] Measured 3 mm from package.  
003aad116  
003aad118  
300  
ID  
250  
ID  
20  
10  
6
VGS (V) = 5.5  
(A)  
250  
(A)  
200  
150  
100  
50  
8
200  
150  
100  
50  
5
175  
C
25 C  
°
°
4.5  
0
0
0
1
2
3
4
0
1.5  
3
4.5  
6
VDS (V)  
VGS (V)  
Fig. 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 6. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
6 / 13  
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
003aad122  
003aad123  
12000  
250  
Ciss  
gfs  
(S)  
C
(pf)  
10000  
8000  
6000  
4000  
200  
150  
100  
50  
Crss  
2000  
10-1  
0
1
10  
0
50  
100  
150  
200  
VGS (V)  
ID (A)  
Fig. 7. Input and reverse transfer capacitances as a  
function of gate-source voltage; typical values  
Fig. 8. Forward transconductance as a function of  
drain current; typical values  
003aad124  
003aad280  
5
30  
RDS(on)  
V
GS(th)  
(V)  
(m  
)
Ω
25  
20  
15  
10  
5
4
max  
3
2
1
0
typ  
min  
0
0
5
10  
15  
20  
- 60  
0
60  
120  
180  
VGS (V)  
T (°C)  
j
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Gate-source threshold voltage as a function of  
of gate-source voltage; typical values  
junction temperature  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
7 / 13  
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
03aa35  
003aad117  
- 1  
10  
6
I
VGS (V) =  
5
5.5  
D
RDSon  
(A)  
(m  
)
Ω
min  
typ  
max  
- 2  
10  
5
- 3  
10  
4
3
2
1
- 4  
10  
6
8
- 5  
10  
20  
10  
- 6  
10  
0
50  
100  
150  
200  
250  
300  
0
2
4
6
ID (A)  
V
(V)  
GS  
Fig. 11. Sub-threshold drain current as a function of  
gate-source voltage  
Fig. 12. Drain-source on-state resistance as a function  
of drain current; typical values  
03aa27  
2
V
DS  
a
I
D
1.5  
V
GS(pl)  
V
GS(th)  
GS  
1
0.5  
0
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
Fig. 14. Gate charge waveform definitions  
- 60  
0
60  
120  
180  
T ( C)  
°
j
Fig. 13. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
8 / 13  
 
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
003aad120  
003aad121  
12000  
10  
VGS  
C
(V)  
(pF)  
8
6
4
2
VDS = 10 V  
Ciss  
8000  
VDS = 20V  
4000  
Coss  
Crss  
0
0
0
10-1  
1
10  
102  
50  
100  
150  
VDS (V)  
QG (nC)  
Fig. 16. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
Fig. 15. Gate-source voltage as a function of gate  
charge; typical values  
003aad119  
100  
IS  
(A)  
80  
60  
40  
20  
0
25 C  
°
T = 175  
C
°
j
0
0.2  
0.4  
0.6  
0.8  
1
Vsd (V)  
Fig. 17. Source current as a function of source-drain voltage; typical values  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
9 / 13  
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
11. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
D
1
base  
D
(1)  
(1)  
L
L
1
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
Fig. 18. Package outline TO-220AB (SOT78)  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
10 / 13  
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
12. Legal information  
12.1 Data sheet status  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Right to make changes — Nexperia reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Suitability for use — Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
12.2 Definitions  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Customers are responsible for the design and operation of their  
applications and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the Nexperia product is suitable and fit for the  
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associated with their applications and products.  
Draft — The document is a draft version only. The content is still under  
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modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
Nexperia does not accept any liability related to any default,  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications  
and the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
short data sheet, the full data sheet shall prevail.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Terms and conditions of commercial sale — Nexperia  
12.3 Disclaimers  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
11 / 13  
 
 
 
 
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor  
tested in accordance with automotive testing or application requirements.  
Nexperia accepts no liability for inclusion and/or use of non-  
automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
12 / 13  
 
Nexperia  
PSMN2R2-40PS  
N-channel 40 V 2.1 mΩ standard level MOSFET  
13. Contents  
1
General description ............................................... 1  
2
Features and benefits ............................................1  
Applications ........................................................... 1  
Quick reference data ............................................. 1  
Pinning information ...............................................2  
Ordering information .............................................2  
Marking ...................................................................2  
Limiting values .......................................................2  
Thermal characteristics .........................................4  
Characteristics .......................................................5  
Package outline ................................................... 10  
3
4
5
6
7
8
9
10  
11  
12  
Legal information .................................................11  
Data sheet status ............................................... 11  
Definitions ...........................................................11  
Disclaimers .........................................................11  
Trademarks ........................................................ 12  
12.1  
12.2  
12.3  
12.4  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 22 February 2013  
©
PSMN2R2-40PS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
22 February 2013  
13 / 13  

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