PBSS5320D [NEXPERIA]
20 V low VCEsat PNP transistorProduction;型号: | PBSS5320D |
厂家: | Nexperia |
描述: | 20 V low VCEsat PNP transistorProduction 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:337K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
age
PBSS5320D
20 V low VCEsat PNP transistor
Product data sheet
2002 Jun 12
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capability
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−20
−3
V
• Improved device reliability due to reduced heat
generation
A
ICM
−5
A
RCEsat
133
mΩ
APPLICATIONS
PINNING
PIN
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
DESCRIPTION
1
2
3
4
5
6
collector
collector
base
• Heavy duty battery powered equipment (motor and lamp
drivers).
emitter
collector
collector
DESCRIPTION
PNP low VCEsat transistor in a SOT457 (SC-74) plastic
package.
6
5
2
4
3
MARKING
1, 2, 5, 6
TYPE NUMBER
PBSS5320D
MARKING CODE
3
52
4
1
Top view
MAM466
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
2002 Jun 12
2
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current
open base
−20
−5
open collector
−3
ICM
−5
IB
−500
600
750
+150
150
+150
mA
mW
mW
°C
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
208
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to
ambient
note 1
note 2
160
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
2002 Jun 12
3
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base cut-off current VCB = −20 V; IE = 0
VCB = −20 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
CONDITIONS
MIN.
MIN.
MAX.
UNIT
nA
ICBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−50
−100
−
μA
IEBO
hFE
emitter-base cut-off current
DC current gain
nA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
200
200
−
VCE = −2 V; IC = −1000 mA; note 1 200
VCE = −2 V; IC = −2000 mA; note 1 150
−
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −5 mA
−
−
−
−
−
−
−
−
−130
−80
−160
−400
−250
−400
133
−1.2
mV
mV
mV
mV
mV
mV
mΩ
V
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −20 mA; note 1
IC = −2 A; IB = −200 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −3 A; IB = −300 mA; note 1
IC = −2 A; IB = −200 mA; note 1
RCEsat
VBEsat
equivalent on-resistance
85
base-emitter saturation
voltage
−
VBEon
Cc
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1
−1.2
−
−
−
−
−
V
collector capacitance
transition frequency
VCB = −10 V; IE = Ie = 0; f = 1 MHz
50
−
pF
FT
IC = −200 mA; VCE = −10 V;
100
MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Jun 12
4
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2002 Jun 12
5
NXP Semiconductors
Product data sheet
20 V low VCEsat PNP transistor
PBSS5320D
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
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infringement and limitation of liability, unless explicitly
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published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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of an NXP Semiconductors product can reasonably be
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 12
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
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Printed in The Netherlands
613514/01/pp7
Date of release: 2002 Jun 12
Document order number: 9397 750 09759
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