PBSS5320T-Q [NEXPERIA]
20 V, 3 A PNP low VCEsat transistorProduction;型号: | PBSS5320T-Q |
厂家: | Nexperia |
描述: | 20 V, 3 A PNP low VCEsat transistorProduction |
文件: | 总10页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
21 June 2022
Product data sheet
1. General description
PNP low VCEsat transistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBSS4320T
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
•
•
•
•
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out (LDO).
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-20
V
IC
collector current
-
-
-
-
-2
-3
A
A
ICRM
repetitive peak collector δ ≤ 0.25; Operated under pulsed
current
conditions; tp ≤ 100 ms
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
75
105
mΩ
Nexperia
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
3
B
E
C
C
2
emitter
3
collector
B
E
1
2
sym132
SOT23
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS5320T-Q
SOT23
plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
ZH%
PBSS5320T-Q
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
-20
-20
-5
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
-2
A
ICRM
repetitive peak collector δ ≤ 0.25; Operated under pulsed
-3
A
current
conditions; tp ≤ 100 ms
ICM
IB
peak collector current
base current
single pulse; tp ≤ 1 ms
-
-5
A
-
-0.5
300
480
540
1.2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
mW
mW
mW
W
[2]
-
[3]
-
[1] [4]
-
Tj
junction temperature
ambient temperature
-
150
150
°C
°C
Tamb
-65
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Product data sheet
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Nexperia
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
Symbol
Parameter
Conditions
Min
Max
Unit
Tstg
storage temperature
-65
150
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
-
-
-
-
-
-
417
260
230
104
[2]
[3]
[1] [4]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
-100
-50
Unit
nA
ICBO
collector-base cut-off
current
VCB = -20 V; IE = 0 A; Tamb = 25 °C
VCB = -20 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
hFE
emitter-base cut-off
current
-100
nA
DC current gain
VCE = -2 V; IC = -100 mA; Tamb = 25 °C
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
220
220
200
-
-
-
-
-
-
VCE = -2 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
150
100
-
-
-
-
VCE = -2 V; IC = -3 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA; Tamb = 25 °C
IC = -1 A; IB = -50 mA; Tamb = 25 °C
-
-
-
-
-
-
-70
mV
mV
mV
-130
-230
IC = -2 A; IB = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-
-
-
-
-210
-300
105
-1.1
-1.2
mV
mV
mΩ
V
IC = -3 A; IB = -300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
75
-
base-emitter saturation IC = -2 A; IB = -100 mA; pulsed; tp ≤
voltage
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
V
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Product data sheet
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Nexperia
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-1.2
-
-
V
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
-
-
MHz
pF
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
50
mld876
aaa-035146
-40.5 mA
-31.5 mA
1000
5
I
= -45.0 mA
B
I
C
h
FE
(A)
-36.0 mA
-27.0 mA
800
4
3
2
1
0
(1)
-22.5 mA
-13.5 mA
600
400
200
0
-18.0 mA
-9.0 mA
(2)
(3)
-4.5 mA
- 1
2
3
4
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
0
0.4
0.8
1.2
1.6
V
2.0
(V)
I
C
CE
VCE = -2 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 2. Collector current as a function of collector-
emitter voltage; typical values
Fig. 1. DC current gain as a function of collector
current; typical values
mld877
mld878
- 1200
- 1400
V
BEsat
V
BE
(mV)
(mV)
(1)
- 800
- 1000
(1)
(2)
(2)
(3)
(3)
- 400
- 600
0
- 10
- 200
- 1
2
3
I
4
- 1
2
3
I
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
C
C
VCE = -2 V
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 3. Base-emitter voltage as a function of collector Fig. 4. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
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Product data sheet
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Nexperia
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
mld879
mld880
3
- 1400
- 10
V
(mV)
BEsat
V
(mV)
CEsat
2
- 1000
- 10
(1)
(2)
(1)
(2)
- 600
- 200
(3)
- 10
(3)
-1
- 10
- 1
2
- 10
3
I
4
- 1
2
3
I
4
- 10
- 1
- 10
- 10
- 10
(mA)
-1
-10
-10
-10
-10
(mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 5. Base-emitter saturation voltage as a function of Fig. 6. Collector-emitter saturation voltage as a
collector current; typical values
function of collector current; typical values
mld881
mld882
3
3
- 10
- 10
V
V
CEsat
CEsat
(mV)
(mV)
2
2
- 10
- 10
(1)
(3)
(2)
(1)
(3)
(2)
- 10
- 10
- 1
- 10
- 1
- 10
- 1
2
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 20
IC/IB = 50
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS5320T-Q
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Nexperia B.V. 2022. All rights reserved
Product data sheet
21 June 2022
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Nexperia
PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
mld883
mld884
3
2
- 10
10
R
CEsat
(Ω)
V
(mV)
CEsat
10
2
1
- 10
(1)
- 1
10
10
(1)
(2)
(3)
(3) (2)
- 2
- 10
- 10
- 1
2
3
4
- 1
2
3
I
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
I
C
C
IC/IB = 100
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 10. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 11. Package outline SOT23
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PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 12. Reflow soldering footprint for SOT23
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 13. Wave soldering footprint for SOT23
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Product data sheet
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PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
PBSS5320T-Q v.2
Modifications:
Release date
20220621
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBSS5320T-Q v.1
•
Characteristics: Figure 2 added
PBSS5320T-Q v.1
20220505
Product data sheet
-
-
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PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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Nexperia does not accept any liability related to any default, damage, costs
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and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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PBSS5320T-Q
20 V, 3 A PNP low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................3
11. Test information..........................................................6
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 June 2022
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