PBSS5330PA [NEXPERIA]
30 V, 3 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5330PA |
| 厂家： | 
Nexperia |
| 描述： | 30 V, 3 A PNP low VCEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an
ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4330PA.
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
•
•
•
•
•
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
3. Applications
Loadswitch
•
•
•
•
•
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-30
V
IC
collector current
-
-
-
-
-3
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
-5
A
RCEsat
collector-emitter
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
75
107
mΩ
saturation resistance
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
3
1
2
3
B
E
C
base
3
emitter
collector
1
2
sym013
1
2
Transparent top view
DFN2020-3 (SOT1061)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS5330PA
DFN2020-3
DFN2020-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
SOT1061
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5330PA
AJ
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
2 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-30
-30
-6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
V
open collector
-
V
-
-3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
-5
A
IB
-
-500
500
1
mA
mW
W
Ptot
total power dissipation
[1]
[2]
[3]
[4]
-
-
-
1.25
2.1
150
150
150
W
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aab999
2.5
P
tot
(W)
(1)
2.0
1.5
1.0
0.5
0.0
(2)
(3)
(4)
- 75
- 25
25
75
125
T
175
(°C)
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig. 1. Power derating curves
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
3 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
250
125
100
60
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[4]
-
-
-
-
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3]
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aab979
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
4 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
006aab980
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac000
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
1
0.02
0
0.01
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
5 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
006aab982
2
10
duty cycle = 1
Z
0.75
0.5
th(j-a)
(K/W)
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
6 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-50
Unit
nA
ICBO
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
VCB = -30 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C
current
-100
nA
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
-
nA
DC current gain
VCE = -2 V; IC = -0.5 A; pulsed;
200
320
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
175
280
210
160
-45
450
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed;
140
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -3 A; pulsed;
100
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
IC = -0.5 A; IB = -50 mA; pulsed;
-
-
-
-70
-130
-240
mV
mV
mV
saturation voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -50 mA; pulsed;
-90
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -2 A; IB = -100 mA; pulsed;
-170
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
-
-
-230
75
-320
107
mV
mΩ
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = -2 A; IB = -100 mA; pulsed;
-
-
-
-0.89 -1.1
-0.97 -1.2
-0.75 -1
V
V
V
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
td
tr
delay time
rise time
VCC = -9 V; IC = -2 A; IBon = -0.1 A;
IBoff = 0.1 A; Tamb = 25 °C
-
-
-
-
-
-
11
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
59
ton
ts
turn-on time
storage time
fall time
70
165
35
tf
toff
turn-off time
200
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
7 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
165
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
38
45
pF
006aac036
006aac037
800
- 5
I
(mA) = - 53
B
I
C
(A)
- 47.7
- 37.1
h
FE
- 42.4
- 31.8
- 4
(1)
(2)
600
- 26.5
- 15.9
- 21.2
- 10.6
- 3
- 2
400
(3)
- 5.3
200
0
- 1
0
- 1
2
- 10
3
4
- 10
- 1
- 10
- 10
- 10
(mA)
0
- 0.4
- 0.8
- 1.2
- 1.6
- 2.0
(V)
I
V
C
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7. Collector current as a function of collector-
emitter voltage; typical values
Fig. 6. DC current gain as a function of collector
current; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
8 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
006aac038
006aac039
- 1.2
- 1.4
V
V
(V)
BEsat
(V)
BE
(1)
(2)
- 0.8
- 1.0
(1)
(2)
(3)
(3)
- 0.4
- 0.6
- 0.2
0
- 10
- 1
2
- 10
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
(mA)
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 8. Base-emitter voltage as a function of collector Fig. 9. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
006aac040
006aac041
- 1
- 1
V
V
CEsat
(V)
CEsat
(V)
- 1
- 1
- 10
- 10
(1)
(2)
(1)
(2)
(3)
- 2
- 2
- 10
- 10
(3)
- 3
- 10
- 3
- 10
- 10
- 1
- 10
2
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
9 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
006aac042
006aac043
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
10
(1)
(2)
(3)
1
1
- 1
10
(1)
(2)
- 1
(3)
10
- 2
- 2
10
10
- 1
2
3
4
- 1
2
3
4
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 13. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
10 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
11. Test information
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 14. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mgd624
Fig. 15. Test circuit for switching times
©
PBSS5330PA
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Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
11 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
12. Package outline
1.3
0.65
max
0.35
0.25
0.45
0.35
1
2
1.05
0.95
2.1
1.9
1.1
0.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
09-11-12
Fig. 16. Package outline DFN2020-3 (SOT1061)
13. Soldering
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
1.05
0.6
0.55
2.3
0.25
1.1
1.2
0.25
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Fig. 17. Reflow soldering footprint for DFN2020-3 (SOT1061)
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
12 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
PBSS5330PA v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20150407
Product data sheet
-
PBSS5330PA v.1
Condition VCE changed for parameter ICES in Table 7, Characteristics
•
PBSS5330PA v.1
20100419 Product data sheet
-
-
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
13 / 16
Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
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Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Preliminary
[short] data
sheet
Qualification This document contains data from the
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Product
[short] data
sheet
Production
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specification.
[1] Please consult the most recently issued document before initiating or
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applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
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Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
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Nexperia
PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................7
Test information ...................................................11
Package outline ................................................... 12
Soldering .............................................................. 12
Revision history ...................................................13
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 07 April 2015
©
PBSS5330PA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
7 April 2015
16 / 16
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