NESG2031M16-T3YFB-A [NEC]
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN;型号: | NESG2031M16-T3YFB-A |
厂家: | NEC |
描述: | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN 晶体 晶体管 |
文件: | 总12页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2031M16
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
•
•
•
Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
<R>
Part Number
Order Number
Package
Quantity
Supplying Form
NESG2031M16
NESG2031M16-A
6-pin lead-less minimold 50 pcs
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
(M16, 1208 PKG)
(Pb-Free)
(Non reel)
10 kpcs/reel
NESG2031M16-T3 NESG2031M16-T3-A
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
13.0
Unit
V
5.0
V
1.5
V
35
mA
mW
°C
°C
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
175
Tj
150
Tstg
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10394EJ03V0DS (3rd edition)
Date Published September 2009 NS
Printed in Japan
2003, 2009
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG2031M16
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
IEBO
VCB = 5 V, IE = 0 mA
−
−
−
−
100
100
260
nA
nA
−
VEB = 1 V, IC = 0 mA
VCE = 2 V, IC = 5 mA
Note 1
hFE
130
190
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
20
16.0
−
25
18.0
0.8
−
−
GHz
dB
⏐S21e⏐2 VCE = 3 V, IC = 20 mA, f = 2 GHz
VCE = 2 V, IC = 5 mA, f = 2 GHz,
NF
1.1
dB
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
NF
Noise Figure (2)
−
15.0
−
1.3
−
−
−
dB
dB
dB
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 2 GHz,
Ga
Associated Gain (1)
Associated Gain (2)
17.0
10.0
ZS = ZSopt, ZL = ZLopt
VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
Ga
ZS = ZSopt, ZL = ZLopt
Note 2
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
19.0
−
0.15
21.5
13
0.25
−
pF
dB
MSGNote 3 VCE = 3 V, IC = 20 mA, f = 2 GHz
Gain 1 dB Compression Output Power
PO (1 dB) VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
−
dBm
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
−
23
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
S21
S12
3. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
zF
<R>
Marking
hFE Value
130 to 260
2
Data Sheet PU10394EJ03V0DS
NESG2031M16
<R>
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
300
250
0.3
0.2
0.1
Mounted on Glass Epoxy PCB
f = 1 MHz
(1.08 cm2 × 1.0 mm (t) )
200
175
150
100
50
0
25
50
75
100
125
(°C)
150
1.0
1.0
0
2
4
6
8
10
Ambient Temperature T
A
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
100
10
1
V
CE = 1 V
V
CE = 2 V
0.1
0.1
0.01
0.001
0.01
0.001
0.0001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
35
30
25
20
15
10
5
V
CE = 3 V
200
180
160
140
μ
μ
μ
μ
A
A
A
A
120
μ
A
100
80
μ
μ
μ
A
A
A
0.1
0.01
0.001
60
40
μ
A
I
B
= 20
5
μ
A
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
0
1
2
3
4
6
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
3
Data Sheet PU10394EJ03V0DS
NESG2031M16
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
1 000
100
10
V
CE = 1 V
VCE = 2 V
0.1
1
10
(mA)
100
0.1
1
10
(mA)
100
Collector Current I
C
Collector Current I
C
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
100
10
V
CE = 3 V
0.1
1
10
(mA)
100
Collector Current I
C
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10394EJ03V0DS
NESG2031M16
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
25
20
15
30
25
20
15
10
V
CE = 1 V,
V
CE = 2 V,
f = 2 GHz
f = 2 GHz
10
5
5
0
0
1
10
100
1
10
100
Collector Current I
C
(mA)
Collector Current I (mA)
C
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
V
CE = 1 V,
V
CE = 3 V,
I
C
= 10 mA
f = 2 GHz
30
25
20
15
10
5
25
MSG
MAG
20
15
10
2
|S21e
|
5
0
0
1
10
100
0.1
1
10
100
Frequency f (GHz)
Collector Current I (mA)
C
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
CE = 2 V,
V
CE = 3 V,
I
C
= 10 mA
I
C
= 10 mA
MSG
MSG
MAG
MAG
MAG
MAG
2
2
MSG
|S21e
|
MSG
|S21e
|
0
0.1
0
0.1
1
10
100
1
10
100
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
5
Data Sheet PU10394EJ03V0DS
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
30
25
20
15
10
5
V
CE = 1 V,
V
CE = 1 V,
MSG
MAG
f = 1 GHz
f = 2 GHz
MSG
MAG
2
|S21e
|
2
|S21e
|
10
5
0
0
1
10
Collector Current I
100
1
10
100
C
(mA)
Collector Current I (mA)
C
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
V
CE = 1 V,
V
CE = 1 V,
f = 3 GHz
f = 5 GHz
25
MSG
MAG
20
15
10
MSG
MAG
2
|S21e
|
2
|S21e
|
5
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 2 V,
V
CE = 2 V,
f = 2 GHz
f = 1 GHz
MSG
MAG
MSG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
6
Data Sheet PU10394EJ03V0DS
NESG2031M16
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
30
25
20
15
10
V
CE = 2 V,
V
CE = 2 V,
f = 3 GHz
f = 5 GHz
25
MSG
MAG
20
15
10
MSG
MAG
2
|S21e
|
2
|S21e
|
5
0
5
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
25
20
15
10
5
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 3 V,
f = 1 GHz
f = 2 GHz
MSG
MSG
MAG
2
2
|S21e
|
|S21e
|
0
0
1
10
Collector Current I
100
100
1
10
Collector Current I
C
(mA)
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
30
25
20
15
10
5
V
CE = 3 V,
V
CE = 3 V,
f = 3 GHz
f = 5 GHz
25
MSG
MAG
20
15
10
5
MSG
MAG
2
|S21e
|
2
|S21e
|
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
7
Data Sheet PU10394EJ03V0DS
NESG2031M16
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
20
15
10
5
50
40
30
20
10
0
50
40
30
20
10
0
20
15
10
5
V
CE = 3 V, f = 1 GHz,
V
CE = 3 V, f = 2 GHz,
Icq = 20 mA
Icq = 20 mA
Pout
Pout
I
C
I
C
0
0
–5
–25
–5
–30
–25
–20
–15
–10
–5
–20
–15
–10
–5
0
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
50
40
30
20
10
0
50
40
30
20
10
0
20
15
10
5
20
15
10
5
V
CE = 3 V, f = 3 GHz,
V
CE = 3 V, f = 5.2 GHz,
Icq = 20 mA
Icq = 20 mA
P
out
P
out
IC
IC
0
0
–5
–20
–5
–15
–15
–10
–5
0
5
–10
–5
0
5
10
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
8
Data Sheet PU10394EJ03V0DS
NESG2031M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
30
25
20
15
10
5
5
4
3
2
1
0
30
25
20
15
10
5
G
a
Ga
NF
NF
V
CE = 1 V,
V
CE = 2 V,
f = 1 GHz
f = 1 GHz
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
30
25
20
15
10
5
5
4
3
30
25
20
15
G
a
G
a
2
1
0
10
5
NF
NF
V
CE = 1 V,
V
CE = 2 V,
f = 2 GHz
f = 2 GHz
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
25
20
15
10
5
5
4
3
2
1
0
25
20
15
10
5
G
a
G
a
NF
NF
V
CE = 1 V,
V
CE = 2 V,
f = 5.2 GHz
f = 5.2 GHz
0
0
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
Remark The graphs indicate nominal characteristics.
9
Data Sheet PU10394EJ03V0DS
NESG2031M16
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
30
25
20
15
10
5
5
4
3
2
1
0
30
25
20
15
10
5
Ga
G
a
NF
NF
V
CE = 3 V,
V
CE = 3 V,
f = 1 GHz
f = 2 GHz
1
10
Collector Current I
100
1
10
Collector Current I (mA)
100
C
(mA)
C
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
5
4
3
2
1
0
25
20
15
10
5
G
a
NF
V
CE = 3 V,
f = 5.2 GHz
0
1
10
Collector Current I
100
C
(mA)
Remark The graphs indicate nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
10
Data Sheet PU10394EJ03V0DS
NESG2031M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
1.0 0.05
+0.07
0.8
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance
and heat sinking.
11
Data Sheet PU10394EJ03V0DS
NESG2031M16
•
The information in this document is current as of September, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
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purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
•
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
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(1)
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"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
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