NESG204619 [NEC]

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION; NEC的NPN硅锗晶体管，低噪声，高增益放大


型号：	NESG204619
厂家：	NEC
描述：	NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION NEC的NPN硅锗晶体管，低噪声，高增益放大晶体晶体管
文件：	总3页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PRELIMINARY DATA SHEET

NEC's NPN SiGe TRANSISTOR

FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

NESG204619

FEATURES

•

IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:

NF = 0.8 dB TYP., G^a= 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ

HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS:

V^CEO(ABSOLUTE MAXIMUM RATINGS) = 5.0 V

3-PIN SUPER MINIMOLD (19) PACKAGE

ORDERING INFORMATION

PART NUMBER

NESG204619-A

QUANTITY

SUPPLYING FORM

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

50 pcs (Non reel)

3 kpcs/reel

NESG204619-T1-A

Remark To order evaluation samples, contact your nearby sales ofﬁce.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

V^CEO

V^EBO

RATINGS

UNIT

1.5

I^C

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PCB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

NESG204619

ELECTRICAL CHARACTERISTICS (TA =+25ºC)

PARAMETER

DC Characteristics

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

−

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I^CBO

I^EBO

VCB = 5 V, IE = 0 mA

100

220

−

VEB = 0.5 V, IC = 0 mA

VCE = 1 V, IC = 2 mA

Note 1

hFE

140

180

RF Characteristics

−

Gain Bandwidth Product

Insertion Power Gain

f^T

VCE = 1 V, IC = 15 mA, f = 2 GHz

−

GHz

|S21e|²

V^CE= 1 V, IC = 3 mA, f = 2 GHz,

0.8

1.5

Noise Figure

ZS = ZSopt, ZL = ZLopt

−

G^a

VCE = 1 V, IC = 3 mA, f = 2 GHz,

ZS = ZSopt, ZL = ZLopt

9.0

11.0

0.2

Associated Gain

Note 2

−

Reverse Transfer Capacitance

C^re

VCB = 1 V, IE = 0 mA, f = 1 MHz

0.4

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter is grounded.

hFE CLASSIFICATION

RANK

Marking

hFE Value

140 to 220

NESG204619

PACKAGE DIMENSIONS

3-PIN SUPER MINIMOLD (19 PACKAGE) (UNIT: mm)

1.6 0.1

0.8 0.1

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably

be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and

agree to fully indemnify CEL for all damages resulting from such improper use or sale.

09/09/2004

A Business Partner of NEC Compound Semiconductor Devices, Ltd.