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元器件品牌
NESG204619-T1-A
[CEL]
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION; NPN硅锗晶体管，低噪声，高增益放大
元器件型号：
NESG204619-T1-A
生产厂家：
CALIFORNIA EASTERN LABS
描述和应用：
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
NPN硅锗晶体管，低噪声，高增益放大
晶体 晶体管 光电二极管 放大器
PDF文件：
总4页 (文件大小：317K)
下载文档：
下载PDF数据表文档文件
型号参数：NESG204619-T1-A参数
查看货源
NESG204619-T1-AFB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
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NEC
NESG204619-T1-AFB
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, 19, SUPER MINIMOLD PACKAGE-3
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156
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0
NEC
NESG2046M33
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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19
CEL
NESG2046M33
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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13
NEC
NESG2046M33
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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13
NEC
NESG2046M33-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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3
NEC
NESG2046M33-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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27
NEC
NESG2046M33-A
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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25
CEL
NESG2046M33FB-A
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, M33, 0804, SUPER LEADLESS MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
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156
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0
NEC
NESG2046M33FB-T3-A
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon Germanium, NPN, M33, 0804, SUPER LEADLESS MINIMOLD PACKAGE-3
Warning
: Undefined variable $rtag in
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156
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0
NEC
NESG2046M33-T3
RF POWER AMP TRANSISTOR, FT > 300 MHZ,5V V(BR)CEO,40MA I(C),SOT-416VAR
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0
RENESAS
NESG2046M33-T3-A
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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23
CEL
NESG2046M33-T3-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
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14
NEC
NESG2046M33-T3-A
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
Warning
: Undefined variable $rtag in
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156
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3
NEC
NESG2101M05
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
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79
NEC
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