2SK4080-ZK-E1-AY [NEC]
Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN;
| 型号： | 2SK4080-ZK-E1-AY |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件： | 总8页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4080
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous
rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low QGD: QGD = 6.3 nC TYP.
• 4.5 V drive available
(TO-251)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4080(1)-S27-AY Note
2SK4080-ZK-E1-AY Note
2SK4080-ZK-E2-AY Note
<R>
TO-251 (MP-3-b)
TO-252 (MP-3ZK)
TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
±20
±48
±144
29
V
V
A
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
W
W
°C
PT2
1.0
Channel Temperature
Tch
150
Storage Temperature
Tstg
IAS
–55 to +150
°C
A
Single Avalanche Current Note2
Single Avalanche Energy Note2
21
EAS
44.1
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18214EJ2V0DS00 (2nd edition)
Date Published March 2007 NS CP(K)
Printed in Japan
2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4080
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±100
2.5
μA
nA
V
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 24 A
VGS = 4.5 V, ID = 24 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
7
2.0
14
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
S
7.0
10.2
1670
290
150
10
9.0
15
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 15 V
ID = 30 A
5.3
42
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = 12 V
RG = 3 Ω
6.1
32
Total Gate Charge
QG1
VDD = 15 V, VGS = 12 V, ID = 30 A
VDD = 15 V, VGS = 4.5 V, ID = 30 A
VDD = 15 V
QG2
13
Gate to Source Charge
Gate to Drain Charge
Gate Resistance
QGS
QGD
RG
4.6
6.3
2.4
0.94
29
ID = 30 A
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
VF(S-D)
trr
IF = 30 A, VGS = 0 V
IF = 30 A, VGS = 0 V
di/dt = 100 A/μs
1.5
V
ns
nC
Qrr
23
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
DS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
I
D
τ
t
d(on)
t
r
t
d(off)
t
f
V
DD
t
on
t
off
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
R
L
50 Ω
PG.
V
DD
2
Data Sheet D18214EJ2V0DS
2SK4080
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
60
1000
100
10
I
D(DC)
I
D(pulse)
50
40
30
20
10
0
100 μs
RDS(ON) Limited
(at VGS = 10 V)
1 ms
Power Dissipation Limited
= 25°C
Single pulse
1
T
C
10 ms
0.1
0.1
1
10
100
0
25
50
75
100 125 150
VDS - Drain to Source Voltage - V
TC - Case Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-a) = 125°C/W
Rth(ch-c) = 4.3°C/W
1
Single Pulse
100 1000
0.1
100 μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D18214EJ2V0DS
2SK4080
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
200
150
100
50
100
10
T
ch = −55°C
−25°C
25°C
V
GS = 10 V
75°C
125°C
150°C
1
4.5 V
1.5
0.1
0.01
VDS = 10 V
Pulsed
2.5
Pulsed
0
0
0.5
1
2
3
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
100
Tch = 150°C
125°C
V
DS = 10 V
= 1 mA
I
D
75°C
10
25°C
−25°C
−55°C
1.5
1
1
V
DS = 10 V
0.5
0
Pulsed
0.1
0.1
1
10
100
-75
-25
25
75
125
175
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATERESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
30
Pulsed
Pulsed
25
20
15
10
5
15
10
5
I
D
= 48 A
24 A
V
GS = 4.5 V
9.6 A
10 V
0
0
0
5
10
15
20
1
10
100
1000
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D18214EJ2V0DS
2SK4080
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
25
10000
1000
100
C
C
iss
20
15
10
5
V
GS = 4.5 V
oss
10 V
C
rss
V
GS = 0 V
D
I = 24 A
f = 1 MHz
Pulsed
0
10
-75
-25
25
75
125
175
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
30
25
20
15
10
5
12
10
8
V
DD = 24 V
15 V
t
d(off)
6 V
t
f
t
d(on)
10
6
V
GS
4
t
r
V
V
R
DD = 15 V
GS = 12 V
V
DS
2
ID = 30 A
G
= 3 Ω
1
0
0
0.1
1
10
100
0
10
20
30
40
ID - Drain Current - A
QG - Gate Chage - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
10
V
GS = 10 V
100
10
4.5 V
0 V
1
0.1
0.01
di/dt = 100 A/
GS = 0 V
μs
Pulsed
V
1
0
0.5
1
1.5
0.1
1
10
100
ID - Drain Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D18214EJ2V0DS
2SK4080
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100
80
60
40
20
0
100
10
1
V
R
V
DD = 15 V
= 25 Ω
GS = 20
21 A
G
→ 0 V
I
AS = 21 A
I
AS
≤
E
AS = 44.1 mJ
V
V
R
DD = 15 V
GS = 20 → 0 V
G
= 25 Ω
Starting Tch = 25°C
25
50
75
100
125
150
0.01
0.1
1
10
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
Data Sheet D18214EJ2V0DS
2SK4080
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-b)
2) TO-252 (MP-3ZK)
<R>
2.3 0.1
6.6 0.2
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
5.3 TYP.
0.5 0.1
0.5 0.1
4
No Plating
4
1
2
3
1
2
3
1.14 MAX.
No Plating
0.76 0.12
0.76 0.12
2.3 TYP.
0.5 0.1
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
2.3 TYP.
1.0
1. Gate
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D18214EJ2V0DS
2SK4080
•
The information in this document is current as of March, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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•
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•
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M8E 02. 11-1
相关型号：
2SK4080-ZK-E2-AY
Small Signal Field-Effect Transistor, 48A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, TO-252, MP-3ZK, 3 PIN
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RENESAS
2SK4081-ZK-E1-AY
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RENESAS
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