2SK4081 [NEC]
SWITCHING N-CHANNEL POWER MOS FET; 切换N沟道功率MOS FET
| 型号： | 2SK4081 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 文件： | 总8页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4081
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance
RDS(on) = 5 Ω MAX. (VGS = 10 V, ID = 1.0 A)
• Low gate charge
QG = 7.2 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
• Gate voltage rating: ±30 V
• Avalanche capability ratings
<R>
ORDERING INFORMATION
PART NUMBER
2SK4081-S15-AY Note
2SK4081(1)-S27-AY Note
2SK4081-ZK-E1-AY Note
2SK4081-ZK-E2-AY Note
LEAD PLATING
PACKING
Tube 70 p/tube
Tube 75 p/tube
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
(TO-251)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
600
V
V
±30
±2.0
A
±8.0
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note2
30
W
W
°C
°C
A
PT2
1.0
Channel Temperature
Tch
150
(TO-252)
Storage Temperature
Tstg
−55 to +150
1.4
Single Avalanche Current Note3
Single Avalanche Energy Note3
IAS
EAS
117
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2007
Document No. D18785EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4081
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
IDSS
TEST CONDITIONS
VDS = 600 V, VGS = 0 V
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
10
±100
3.5
μA
nA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 1.0 A
VGS = 10 V, ID = 1.0 A
VDS = 10 V,
2.5
3.0
0.35
S
4.2
230
95
5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V,
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
11
td(on)
tr
VDD = 150 V, ID = 1.0 A,
VGS = 10 V,
11
Rise Time
7
Turn-off Delay Time
td(off)
tf
RG = 10 Ω
13
Fall Time
13.5
7.2
2.9
3.0
0.87
175
550
Total Gate Charge
QG
VDD = 450 V,
VGS = 10 V,
ID = 2.0 A
Gate to Source Charge
QGS
QGD
VF(S-D)
trr
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
IF = 2.0 A, VGS = 0 V
IF = 2.0 A, VGS = 0 V,
di/dt = 100 A/μs
1.5
ns
nC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
V
GS
0
R
L
PG.
GS = 20 → 0 V
90%
V
GS
Wave Form
V
GS
VDD
50 Ω
10%
90%
RG
V
PG.
V
DD
DS
90%
BVDSS
I
AS
V
DS
V
0
GS
V
DS
10% 10%
VDS
0
I
D
Wave Form
VDD
τ
t
d(on)
t
r
td(off)
t
f
τ = 1 s
μ
Duty Cycle ≤ 1%
t
on
t
off
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG
= 2 mA
RL
PG.
V
DD
50 Ω
2
Data Sheet D18785EJ2V0DS
2SK4081
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Tch - Channel Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs. CASE TEMPERATURE
100
10
2.5
2
I
I
D(pulse)
D(DC)
1
1.5
1
0.1
0.01
0.001
0.5
0
T
C
= 25°C
Single Pulse
0.1
1
10
100
1000
0
25
50
75
100
125
150
VDS - Drain to Source Voltage - V
TC - Case Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 125°C/Wi
Rth(ch-C) = 4.167°C/Wi
1
0.1
0.01
Single Pulse
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D18785EJ2V0DS
2SK4081
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
6
5
4
3
2
1
0
10
1
V
DS = 10 V
Pulsed
V
GS = 20 V
10 V
T
ch = −55°C
−40°C
−25°C
25°C
75°C
125°C
150°C
0.1
0.01
Pulsed
30
0
5
10
15
20
25
35
0
4
8
12
16
20
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
6
10
1
V
DS = 10 V
Pulsed
5
4
3
2
1
0
T
ch = −55°C
25°C
75°C
125°C
−40°C
−25°C
150°C
0.1
V
DS = 10 V
= 1 mA
I
D
0.01
-75
-25
25
75
125
175
0.01
0.1
1
10
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
12
12
10
8
10
8
6
6
I
D
= 2.0 A
1.0 A
VGS = 10 V
4
4
20 V
2
2
Pulsed
Pulsed
0
0
0
5
10
15
20
0.01
0.1
1
10
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
Data Sheet D18785EJ2V0DS
2SK4081
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
12
10
8
10000
1000
100
10
V
GS = 10 V
Pulsed
I
D
= 2.0 A
1.0 A
C
iss
C
oss
6
4
C
rss
1
2
V
GS = 0 V
f = 1 MHz
0.1
0
0.1
1
10
100
1000
-75
-25
25
75
125
175
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
600
500
400
300
200
100
0
12
10
8
V
V
DD = 150 V
GS = 10 V
V
DD = 450 V
300 V
150 V
R = 10 Ω
G
t
f
t
d(off)
V
GS
6
t
d(on)
4
t
r
V
DS
2
I
D
= 2.0 A
7
1
0
0.1
1
10
0
1
2
3
4
5
6
8
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1000
100
10
V
GS = 10 V
1
0 V
0.1
0.01
di/dt = 100 A/μs
VGS = 0 V
Pulsed
1.5
0
0.5
1
0.1
1
10
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D18785EJ2V0DS
2SK4081
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
10
120
100
80
60
40
20
0
V
R
V
I
DD = 150 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 1.4 A
G
I
AS = 1.4 A
1
EAS = 117 mJ
V
R
V
DD = 150 V
= 25 Ω
GS = 20 → 0 V
Starting Tch = 25°C
G
0.1
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D18785EJ2V0DS
2SK4081
<R>
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
6.6 0.2
5.3 TYP.
Mold Area
2.3 0.1
0.5 0.1
4.3 MIN.
2.3 0.1
6.6 0.2
5.3 TYP.
4
0.5 0.1
4
1
2
3
1
2
3
No Plating
1.14 MAX.
1.14 MAX.
0.76 0.12
2.3 TYP.
0.5 0.1
2.3 TYP.
0.5 0.1
0.76 0.1
2.3 TYP.
2.3 TYP.
1.Gate
2.Drain
1. Gate
3.Source
2. Drain
4.Fin (Drain)
3. Source
4. Fin (Drain)
3) TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
Drain
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
Body
Diode
4
Gate
Source
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
7
Data Sheet D18785EJ2V0DS
2SK4081
•
The information in this document is current as of June, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
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circuits, software and information in the design of a customer's equipment shall be done under the full
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customers or third parties arising from the use of these circuits, software and information.
•
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redundancy, fire-containment and anti-failure features.
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
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determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
8
Data Sheet D18785EJ2V0DS
相关型号：
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