2SK3456-S [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3456-S |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3456
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3456 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, designed for high voltage applications such
as switching power supply, AC adapter.
PART NUMBER
2SK3456
PACKAGE
TO-220AB
TO-262
2SK3456-S
2SK3456-ZJ
TO-263
FEATURES
• Low gate charge
G
DD
GS
D
Q = 30 nC TYP. (V = 400 V, V = 10 V, I = 12 A)
• Gate voltage rating ±30 V
• Low on-state resistance
DS(on)
R
GS
D
= 0.60 Ω MAX. (V = 10 V, I = 6.0 A)
• Avalanche capability ratings
• Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
GS
DSS
GSS
Drain to Source Voltage (V = 0 V)
V
500
V
V
DS
Gate to Source Voltage (V = 0 V)
V
±30
±12
C
D(DC)
D(pulse)
T1
Drain Current (DC) (T = 25°C)
I
I
A
A
Drain Current (Pulse) Note1
±36
A
Total Power Dissipation (T = 25°C)
P
P
1.5
W
W
°C
°C
A
C
T2
Total Power Dissipation (T = 25°C)
100
ch
Channel Temperature
T
150
stg
Storage Temperature
T
−55 to +150
12
Single Avalanche Current Note2
Single Avalanche Energy Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
AS
I
AS
E
103
mJ
ch
DD
G
GS
2. Starting T = 25°C, V = 150 V, R = 25 Ω, V = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2002 NS CP(K)
Printed in Japan
D14753EJ1V0DS00 (1st edition)
2000
©
2SK3456
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 500 V, VGS = 0 V
MIN.
TYP.
MAX.
100
UNIT
µA
nA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 6.0 A
VGS = 10 V, ID = 6.0 A
VDS = 10 V
±100
3.5
2.5
2.0
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
0.48
1620
250
10
0.60
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 150 V, ID = 6.0 A
VGS = 10 V
24
Rise Time
18
Turn-off Delay Time
RG = 10 Ω
50
Fall Time
15
Total Gate Charge
QG
VDD = 400 V
30
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
9
ID = 12 A
11
IF = 12 A, VGS = 0 V
IF = 12 A, VGS = 0 V
di/dt = 50 A/ µs
1.0
1.5
11
µs
µC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
R
G
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
V
GS = 20→0V
I
D
90%
90%
10%
I
D
V
0
GS
BVDSS
I
D
0
Wave Form
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
µ
τ = 1
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D14753EJ1V0DS
2SK3456
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
35
100
10
Pulsed
V
GS = 20 V
30
25
20
15
10
5
10 V
T
A
=150˚C
125˚C
75˚C
1
25˚C
−25˚C
−50˚C
0.1
0.01
0.001
VDS = 10 V
Pulsed
0
0
10
20
30
40
0
5
10
15
V
DS - Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
100
10
4.0
3.0
2.0
1.0
0
V
DS = 10 V
V
DS = 10 V
= 1 mA
Pulsed
I
D
T
A
= −50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
1
0.1
0.01
150
−50
0
50
100
0.1
1
10
100
T
ch - Channel Temperature - ˚C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5
1.2
0.9
0.6
0.3
0
Pulsed
1.4
Pulsed
VGS = 10 V
1.2
1.0
0.8
0.6
0.4
0.2
0
20 V
I
D
= 12 A
6.0 A
2.4 A
0.1
1
10
100
0
5
10
15
20
I
D - Drain Current - A
V
GS - Gate to Source Voltage - V
3
Data Sheet D14753EJ1V0DS
2SK3456
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.6
100
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I = 6.0 A
D
V
GS = 10 V
12 A
1
0 V
0.1
0.01
V
GS = 10 V
Pulsed
1.5
Pulsed
0
0.5
1.0
−50
0
50
100
150
VSD - Source to Drain Voltage - V
T
ch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
100
10
1000
100
10
C
iss
t
f
t
d(off)
t
d(on)
Coss
t
r
1
1
V
V
DD = 150 V
GS = 10 V
V
GS = 0 V
Crss
R
G
= 10 Ω
f = 1 MHz
0.1
0.1
0.1
1
10
100
1000
0.1
1
10
100
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10000
1000
100
10
600
400
200
0
12
10
8
di/dt = 50 A/ s
µ
V
GS = 0 V
V
DD = 400 V
250 V
125 V
V
GS
6
4
2
V
DS
I
D
= 12 A
30
1
0
0.1
1
10
100
0
5
10
15
20
25
35
I
D
- Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D14753EJ1V0DS
2SK3456
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140 160
0
20 40 60 80 100 120 140 160
T
C
- Case Temperature - ˚C
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
1
PW = 10
I
D(pulse)
100
µ
s
ID(DC)
µ
s
1 ms
3 ms
10 ms
30 ms
100 ms
Power Dissipation Limited
T
C
= 25˚C
Single Pulse
0.1
1
10
100
1000
V
DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 83.3˚C/W
Rth(ch-C) = 1.25˚C/W
1
0.1
0.01
0.001
Single Pulse
100 1000
10 µ
100 µ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
5
Data Sheet D14753EJ1V0DS
2SK3456
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
100
80
60
40
20
0
100
10
V
R
V
DD = 150 V
= 25 Ω
GS = 20 → 0 V
G
I
AS ≤ 12 A
IAS = 12 A
1
VDD = 150 V
VGS = 20 → 0 V
RG = 25 Ω
Starting Tch = 25˚C
0.1
0.01
0.1
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - mH
6
Data Sheet D14753EJ1V0DS
2SK3456
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
1.3±0.2
φ
3.6±0.2
10 TYP.
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
1.Gate
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2.54 TYP.
2.Drain
3.Source
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4.8 MAX.
10 TYP.
4
1.3±0.2
EQUIVALENT CIRCUIT
Drain
1
2
3
1.4±0.2
Body
Diode
0.7±0.2
Gate
0.5±0.2
2.54 TYP.
2.54 TYP.
1.Gate
Source
2.Drain
3.Source
4.Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
7
Data Sheet D14753EJ1V0DS
2SK3456
•
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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•
•
•
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M8E 00. 4
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