2SK3458 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK3458 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SK3458
TO-263
Unit: mm
Features
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low gate charge
QG = 25 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
Gate voltage rating 30 V
Low on-state resistance
+0.1
-0.1
0.1max
1.27
RDS(on) = 2.2
MAX. (VGS = 10 V, ID = 3.0 A)
+0.1
0.81
-0.1
Avalanche capability ratings
2.54
1 Gate
+0.2
2.54
-0.2
Surface mount package available
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
800
Unit
V
Gate to source voltage
V
30
A
6.0
Drain current
Idp *
A
24
100
Power dissipation
TC=25
TA=25
PD
W
1.5
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Symbol
IDSS
IGSS
VGS(off)
Yfs
Testconditons
Min
Typ
Max
100
100
3.5
Unit
A
VDS=800V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=3.0A
VGS=10V,ID=3.0A
A
2.5
2.0
V
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
S
RDS(on)1
Ciss
Coss
Crss
ton
1.8
1220
170
16
2.2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
17
tr
7
ID=3.0A,VGS(on)=10V,RG=10
,VDD=150V
Turn-off delay time
Fall time
toff
43
tf
11
Total Gate Charge
QG
25
ID =6.0A, VDD =450V, VGS = 10 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
6
10
1
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