2SK3457 [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET
| 型号： | 2SK3457 |
| 厂家： | 
NEC |
| 描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply.
PART NUMBER
2SK3457
PACKAGE
Isolated TO-220
FEATURES
• Low gate charge
QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
• Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
800
±30
V
V
±5.0
A
±20
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Channel Temperature
2.0
W
W
°C
°C
A
PT2
50
Tch
150
Storage Temperature
Tstg
–55 to +150
5.0
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
73.8
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
©
Document No.
Date Published June 2002 NS CP(K)
Printed in Japan
D14754EJ1V0DS00 (1st edition)
2SK3457
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
TEST CONDITIONS
VDS = 800 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A
VDS = 10 V
MIN.
TYP.
MAX.
100
UNIT
IDSS
µA
nA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
±100
3.5
2.5
2.0
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
1.8
1220
170
16
2.2
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 150 V, ID = 3.0 A
VGS = 10 V
17
Rise Time
7
Turn-off Delay Time
43
RG = 10 Ω
Fall Time
11
Total Gate Charge
QG
VDD = 450 V
24
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
5
ID = 5.0 A
10
IF = 5.0 A, VGS = 0 V
IF = 5.0 A, VGS = 0 V
di/dt = 50 A/ µs
1.0
1310
6.6
ns
µC
Qrr
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
VGS
10%
0
R
G
PG.
PG.
50 Ω
V
DD
V
DD
R = 10 Ω
G
V
GS = 20 → 0 V
I
D
90%
90%
10%
I
D
V
0
GS
BVDSS
10%
I
D
0
Wave Form
I
AS
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1
µ
s
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
V
DD
2
Data Sheet D14754EJ1V0DS
2SK3457
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
60
50
40
30
20
10
0
100
80
60
40
20
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
ID(DC)
10
1
Limited
RDS(on)
300 ms
DC
Power Dissipation Limited
0.1
T
C
= 25˚C
Single Pulse
0.01
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
R
th(ch-A) = 62.5˚C/W
R
th(ch-C) = 2.5˚C/W
1
0.1
0.01
Single Pulse
10 µ
100 µ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D14754EJ1V0DS
2SK3457
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
Pulsed
DS
V
= 10 V
VGS = 10 V
1
A
T
= −50°C
−25°C
25°C
0.1
75°C
125°C
150°C
0.01
0.001
0
5
10
15
0
5
10
15
20
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
A
−
50°C
−25°C
25°C
75°C
125°C
150°C
T
=
1
0.1
0.1
1
10
100
-50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
ID = 6.0 A
3.0 A
GS
V
= 10 V
1.2 A
0.1
1
10
100
0
5
10
15
20
25
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D14754EJ1V0DS
2SK3457
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
5.0
10000
1000
100
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
iss
C
D
I
= 6.0 A
3.0 A
oss
C
GS
V
= 0 V
rss
C
f = 1 MHz
1
-50
0
50
100
150
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
700
1000
100
10
14
12
10
8
ID = 5.0 A
600
500
400
300
200
100
0
VDD = 450 V
300 V
150 V
td(off)
6
VGS
td(on)
tf
4
2
VDS
tr
1
0
0.1
1
10
100
0
5
10
15
20
25
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
10000
1000
100
100
10
1
VGS = 10 V
0.1
0.01
0 V
di/dt = 50 A/ µs
GS
V
= 0 V
10
0.1
1
10
100
0
0.5
1
1.5
IF - Drain Current - A
VSD - Source to Drain Voltage - V
5
Data Sheet D14754EJ1V0DS
2SK3457
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
100
80
60
40
20
0
VDD = 150 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
IAS ≤ 5.0 A
AS
I
= 5.0 A
AS
E
= 73.8 mJ
VDD = 150 V
G
R
V
= 25
Ω
GS
→
0 V
= 20
ch
Starting T = 25°C
0.1
25
50
75
100
125
150
100 µ
1 m
10 m
100 m
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D14754EJ1V0DS
2SK3457
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
4.5±0.2
10.0±0.3
3.2±0.2
2.7±0.2
EQUIVALENT CIRCUIT
Drain (D)
Body
Gate (G)
Diode
2.5±0.1
0.65±0.1
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
Source (S)
2.54 TYP.
1. Gate
2. Drain
3. Source
1
2 3
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
7
Data Sheet D14754EJ1V0DS
2SK3457
•
The information in this document is current as of June, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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•
•
•
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M8E 00. 4
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