MRF6402 [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF6402 |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总4页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF6402/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The MRF6402 is designed for 1.8 GHz Personal Communications Network
(PCN) base stations applications. It incorporates high value emitter ballast
resistors, gold metallizations and offers a high degree of reliability and
ruggedness. For ease of design, this transistor has an internally matched input.
•
•
To be used in Class AB for PCN and Cellular Radio Applications
4.5 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
Specified 26 V, 1.88 GHz Characteristics
Output Power — 4.5 Watts
Gain — 10 dB Typ
Efficiency — 45% Typ
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 319–07, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
40
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CER
V
CBO
V
EBO
45
3.5
0.7
Collector–Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
15
0.2
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T
–65 to +150
200
°C
°C
stg
T
J
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
Symbol
Max
Unit
R
5
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mA, R = 75 Ω)
V
V
V
40
—
—
—
—
Vdc
Vdc
(BR)CER
(BR)EBO
(BR)CBO
C
BE
Emitter–Base Breakdown Voltage
(I = 5 mAdc)
3.5
E
Collector–Base Breakdown Voltage (I = 10 mAdc)
40
—
—
—
—
5
Vdc
C
Collector–Emitter Leakage (V
CE
= 26 V, R
= 75 Ω)
I
mA
BE
CER
(1) Thermal resistance is determined under specified RF operating condition.
(continued)
REV 7
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 0.1 Adc, V
h
FE
50
—
200
—
= 20 Vdc)
CE
C
DYNAMIC CHARACTERISTICS
Output Capacitance
C
—
6
—
pF
ob
(V
CB
= 26 V, I = 0, f = 1 MHz)
E
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
9
10
43
—
—
dB
%
p
(V
CC
= 26 V, P
= 4 W, I
= 40 mA, f = 1.88 GHz)
out
CQ
Collector Efficiency
η
40
(V
CC
= 26 V, P
= 4 W, f = 1.88 GHz)
out
out
Load Mismatch
(V = 26 V, P
Ψ
= 4.5 W, I
= 40 mA, f = 1.88 GHz,
CQ
No Degradation in Output Power
CC
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
1.84
Z
1.75
in
f = 1.95 GHz
1.75
Z
*
OL
Z
= 50 Ω
o
f = 1.95 GHz
f
Z
in
(Ω)
Z
OL
(Ω)
*
(GHz)
Z
OL
*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
1.75
1.84
1.95
0.12 + j0.18
0.13 + j0.2
0.15 + j0.16
0.06 + j0.05
0.06 + j0.04
0.06 + j0.02
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ V = 26 V, I = 40 mA, P = 4.5 W
CE
CQ
out
MRF6402
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
0
V
f
= 26 V
CE
= 1.88
V
= 26 V
– 10
– 20
– 30
– 40
– 50
– 60
– 70
CE
6
5
4
3
2
1
0
1
f
I
= 1.8801 GHz
= 40 mA
2
CQ
3rd Order
24 V
5th
7th
f = 1.88 GHz
= 40 mA
I
CQ
0
0.1
0.2
0.3
0.4
0.5
0.6
0
1
2
3
4
5
6
P
, Input Power (Watts)
P
, Output Power (Watts) PEP
in
out
Figure 2. Typical Output Power
versus Input Power
Figure 3. IMD versus Output Power
T
R4
D1
D2
R3
P1
C10
C6
C8
C11
C4
L2
L1
R2
C7
C9
C5
R1
RF Output
RF Input
C3
C2
C1
C1, C2
1 to 5 pF, Trimmer Capacitor, Johanson
100A, 68 pF, Chip Capacitor, ATC
100A, 82 pF, Chip Capacitor, ATC
15 nF, Chip Capacitor, 0805
330 pF, Chip Capacitor, 0805
4.7 µF, 35 V, Capacitor
L1
2 Turns, Wire 0.5 mm, ID 2 mm
Ferrite Bead, SMD Fair–Rite
10 kΩ, Trimmer
2.2 Ω, Chip Resistor, 0805
56 Ω, Chip Resistor, 1206
1.2 kΩ, 1/4 W, 5%, Resistor
100 Ω, 3 W, Power Resistor
Transistor, BD135
C3, C4
C5, C6
C7, C8
C9, C10
C11
L2
P1
R1
R2
R3
R4
T
D1, D2
Diode, 1N4148
Figure 4. 1.80–1.88 GHz Test Circuit Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF6402
3
C10
C8
T
R3
P1
L2
C6
C11
D1
R4
L1
D2
C5
R2 C7 C9
Output
R1
C3
C4
RF Input
RF Output
C2
C1
Input
Figure 5. Test Circuit Components View and Parts List
PACKAGE DIMENSIONS
Q 2 PL
-A-
L
M
M
M
0.15 (0.006)
T
A
N
IDENTIFICATION
NOTCH
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
6
1
5
4
3
INCHES
MIN
MILLIMETER
-N-
DIM
A
B
C
D
E
MAX
0.985
0.375
0.260
0.125
0.114
0.085
0.170
0.006
0.110
MIN
24.52
9.02
5.85
2.93
2.59
1.91
4.07
0.11
2.29
MAX
25.01
9.52
6.60
3.17
2.90
2.15
4.31
0.15
2.79
0.965
0.355
0.230
0.115
0.102
0.075
0.160
0.004
0.090
2
K
F
F
H
J
K
L
D 2 PL
0.38 (0.015)
M
M
M
T
A
N
0.725 BSC
18.42 BSC
N
Q
0.225
0.125
0.241
0.135
5.72
3.18
6.12
3.42
M
M
M
B
0.38 (0.015)
T
A
N
STYLE 2:
PIN 1. EMITTER (COMMON)
2. BASE (INPUT)
J
3. EMITTER (COMMON)
4. EMITTER (COMMON)
5. COLLECTOR (OUTPUT)
6. EMITTER (COMMON)
C
H
E
SEATING
PLANE
-T-
CASE 319–07
ISSUE M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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