MRF641 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | MRF641 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF641
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF641 is Designed for
Class C, FM Land Mobile Applications
up to 512 MHz.
PACKAGE STYLE .500 6L FLG
FEATURES:
A
C
• Internal Input Matching Network
• PG = 7.8 dB at 15 W/470 MHz
• Omnigold™ Metalization System
2x ØN
FULL R
D
B
E
.725/18,42
F
G
MAXIMUM RATINGS
M
K
3.0 A
36 V
IC
H
I
L
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
VCBO
VCEO
VEBO
PDISS
TJ
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
16 V
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
4.0 V
43 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.0 OC/W
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
K
L
TSTG
θJC
M
N
.120 / 3.05
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 20 mA
IE = 5.0 mA
16
V
36
BVCES
BVEBO
ICES
V
4.0
V
V
CE = 15 V
CE = 5.0 V
5
mA
---
V
IC = 1.0 A
30
150
hFE
V
CB = 12.5 V
f = 1.0 MHz
f = 470 MHz
40
60
COB
pF
7.8
55
8.5
60
PG
dB
%
VCC = 12.5 V
POUT = 15 W
ηC
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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