MRF6404K [MOTOROLA]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF6404K |
| 厂家： | 
MOTOROLA |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总10页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF6404/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
•
Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
•
Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
•
•
To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
24
Unit
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
V
CEO
Vdc
Vdc
Vdc
Adc
V
60
CES
EBO
V
4
Collector–Current — Continuous
I
C
10
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
125
0.71
Watts
W/°C
C
Storage Temperature Range
Operating Junction Temperature
T
–65 to +150
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
Symbol
Max
Unit
R
1.4
°C/W
θJC
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I = 50 mA, I = 0)
V
V
24
4
29
5
—
—
—
—
10
Vdc
Vdc
Vdc
Vdc
mA
C
B
(BR)CEO
Emitter–Base Breakdown Voltage (I = 10 mAdc)
E
(BR)EBO
Collector–Base Breakdown Voltage (I = 50 mAdc)
V
V
60
40
—
68
56
—
C
(BR)CES
Collector–Base Breakdown Voltage (I = 50 mAdc, R
BE
= 75 Ω)
C
(BR)CER
Collector Cutoff Current (V
= 30 V, V
= 0)
I
CES
CE
BE
ON CHARACTERISTICS
DC Current Gain (I = 1 Adc, V
= 5 Vdc)
h
FE
20
50
120
—
C
CE
(1) Thermal resistance is determined under specified RF operating condition.
REV 2
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)
C
Characteristic
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 26 V, I = 0, f = 1 MHz)
Symbol
Min
Typ
Max
Unit
C
30
38
—
pF
ob
CB
E
For information only. This part is collector matched.
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
G
G
7.5
7
8.5
8
—
—
dB
dB
pe
pe
(V
CC
= 26 V, P
= 30 W, I
= 150 mA, f = 1.88 GHz)
CQ
out
Common–Emitter Amplifier Power Gain
(V = 26 V, P = 28 W, I = 150 mA)
CC
(f = 1.99 GHz)
out
CQ
Collector Efficiency
η
%
(V
CC
(V
CC
= 26 V, P
= 26 V, P
= 30 W, f = 1.88 GHz)
= 28 W, f = 1.99 GHz)
38
35
43
40
—
—
out
out
Output Power at 1 dBc
P
1dBc
Watts
(V
CC
(V
CC
= 26 V, f = 1.88 GHz)
= 26 V, f = 1.99 GHz)
30
28
35
33
—
—
Output Mismatch Stress: VSWR = 3:1 (all phase angles)
(V = 26 Vdc, P = 25 W, I = 150 mA, f = 1.88 GHz)
Ψ
No Degradation in Output Power
CC
out
CQ
DCS EVALUATION
f = 1.8 GHz
1.9 GHz
Z
in
f
Z
(Ω)
Z
OL
(Ω)
*
in
1.9 GHz
(GHz)
Z
= 20 Ω
o
Z
*
OL
1.8
1.85
1.9
4.3 + j6.1
4.6 + j5.3
4.8 + j5.0
2.7 – j1.0
2.9 + j0.3
3.0 + j1.2
f = 1.8 GHz
Z
OL
*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ V = 26 V, I = 150 mA, P = 30 W
CC
CQ
out
MRF6404 MRF6404K
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
40
f = 1.7 GHz
V
I
= 26 V
= 150 mA
CC
CQ
35
30
25
20
15
10
5
P
= 5 W
1.9 GHz
1.8 GHz
in
3 W
V
I
= 26 V
= 150 mA
CC
CQ
1 W
0
0
1.70
0
1
2
3
4
5
6
1.75
1.80
1.85
1.90
P
, INPUT POWER (WATTS)
f, FREQUENCY (GHz)
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
– 25
– 30
– 35
– 40
– 45
– 50
– 55
– 60
12
9
V
= 26 V
= 150 mA
CC
3rd Order
I
CQ
f = 1.88 GHz
6
3
5th
7th
0
– 3
– 6
– 9
V
= 26 V
CC
= 150 mA
I
CQ
f = 1.88 & 1.8801 GHz
0
4
8
12
16
20
24
28
32
36
40
0
10
20
30
40
P
, OUTPUT POWER (WATTS) PEP
P , OUTPUT POWER (WATTS)
out
out
Figure 4. Intermodulation versus Output Power
Figure 5. AM/PM Conversion
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
3
V
CC
T2
V
BB
+
C11
C10
R2
R3
+
R4
C7
T1
P1
L1
C13
C12
C9
C8
C5
C4
R1
BASE BIAS CIRCUIT
C20
C2
Z5,Θ
5
C1
Z6,Θ
6
Z7,Θ
7
Z8,Θ
8
Z10,Θ
10
Z12,Θ12
Z1,Θ
1
Z2,Θ2
TRF1
RF
OUTPUT
RF
Θ
B
INPUT
RF CIRCUIT
CT2
C21
CT3
Base Bias Circuit
Decoupling Base Bias Circuit
C12, C13 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
C4
68 pF, Chip Capacitor, ATC 100A
P1
R3
R4
T1,T2
1 KΩ, Trimmer
C5, C9
C7, C11
C8
C10
R1
330 pF, Chip Capacitor, Vitramon (0805 A331 JXB)
4.7 µF, 63 V, Electrolytic Capacitor
68 pF, Chip Capacitor, ATC 100A
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1.5 Ω, Chip Resistor, 0805
47 Ω, Chip Resistor, 0805
330 Ω, Chip Resistor, 0805
Motorola MJD 31C
R2
56 Ω, Chip Resistor, 1206
RF Circuit
C1, C2
68 pF, Chip Capacitor, ATC 100A
All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz
Z1 : 50 Ω Θ1 : 10°
C20, C21 1.3 pF, Chip Capacitor, ATC 100A
CT2
CT3
TRF1
Trimmer Capacitor, Gigatrim, Ref 37281
Trimmer Capacitor, Gigatrim, Ref 37291
MRF6404
Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5°
Z4 : 74 Ω Θ4 : 68°
Z5 : 12.8 Ω Θ5 : 21°
Z6 : 10.4 Ω Θ6 : 49.5°
Z7 : 18 Ω Θ7 : 36.5°
Z8 : 45 Ω Θ8 : 20°
PC Board Material:
ε = 2.55, H = 0.508 mm, T = 0.035 mm
r
Z10 : 50 Ω Θ10 : 10°
Z11 : 74 Ω Θ11 : 74.5°
Z12 : 50 Ω Θ12 : 10°
Figure 6. 1.80–1.88 GHz Test Circuit Electrical Schematic and Components List
MRF6404 MRF6404K
4
MOTOROLA RF DEVICE DATA
(Not to Scale)
Teflon Glass 0.5 mm – Double Side 35 µm Cu.
Figure 7. 1.80–1.88 GHz PCN Test Circuit Photomaster
V
+V
CC
BB
C12 C13
C7
L1
T1
T2
C5
C4
R3
R4
P1
R1
C10
C11
C8
R2
C9
C20
RF INPUT
RF OUTPUT
C1
C2
CT2
C21
CT3
Figure 8. 1.80–1.88 GHz PCN Test Circuit Components Layout
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
5
PCS EVALUATION
f
Z
(Ω)
Z
OL
(Ω)
*
in
(GHz)
2.0 GHz
f = 1.9 GHz
1.90
1.93
1.97
2.00
4.9 + j3.0
5.4 + j2.5
5.6 + j1.4
5.4 – j0.2
3.2 + j0.5
3.3 + j1.2
3.4 + j1.5
3.6 + j2.5
Z
*
OL
Z
in
Z = 20 Ω
o
f = 1.9 GHz
2.0 GHz
Z
OL
*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 9. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ V = 26 V, I = 150 mA, P = 28 W
CC
CQ
out
MRF6404 MRF6404K
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
40
35
P
= 5 W
3 W
in
f = 1.9 GHz
30
2 GHz
25
20
V
I
= 26 V
= 150 mA
CC
CQ
15
10
1 W
V
I
= 26 V
= 150 mA
CC
CQ
5
0
0
1
2
3
4
5
6
1.90
1.925
1.95
1.975
2.00
P
, INPUT POWER (WATTS)
f, FREQUENCY (GHz)
in
Figure 10. Output Power versus Input Power
Figure 11. Output Power versus Frequency
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
f = 1.93 GHz
f = 2 GHz
50
45
40
35
50
η
η
45
40
35
V
I
= 26 V
= 150 mA
V
I
= 26 V
= 150 mA
CC
CQ
CC
CQ
0
0
1
2
3
4
5
6
1
2
3
4
5
6
P
, INPUT POWER (WATTS)
P
, INPUT POWER (WATTS)
in
in
Figure 12. Output Power and Efficiency
versus Input Power
Figure 13. Output Power and Efficiency versus
Input Power
40
35
30
25
20
P
= 5 W
3 W
in
V
I
= 26 V
= 150 mA
CC
CQ
15
10
1 W
5
0
1.90
1.925
1.95
f, FREQUENCY (GHz)
1.975
2.00
Figure 14. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
7
V
CC
T2
V
BB
+
C11
C10
R2
R3
+
R4
C7
T1
P1
L1
C12
C13
C9
C8
C5
C4
R1
BASE BIAS CIRCUIT
C2
Z5,Θ5
C1
Z6,Θ
6
Z7,Θ
7
Z8,Θ
8
Z10,Θ
10
Z12,Θ12
Z1,Θ
1
Z2,Θ2
TRF1
RF
OUTPUT
RF
INPUT
Θ
B
RF CIRCUIT
CT1
CT2
Base Bias Circuit
Decoupling Base Bias Circuit
C12, C13 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
C4
68 pF, Chip Capacitor, ATC 100A
P1
R3
R4
T1,T2
1 KΩ, Trimmer
C5, C9
C7, C11
C8
C10
R1
330 pF, Chip Capacitor, Vitramon (0805 A331 JXB)
4.7 µF, 63 V, Electrolytic Capacitor
68 pF, Chip Capacitor, ATC 100A
15 nF, Chip Capacitor, Vitramon (0805 A153 JXB)
1.2 Ω, Chip Resistor, 0805
47 Ω, Chip Resistor, 0805
330 Ω, Chip Resistor, 0805
Motorola MJD 31C
R2
56 Ω, Chip Resistor, 1206
RF Circuit
C1, C2
68 pF, Chip Capacitor, ATC 100A
All Electrical Lengths Are Referenced from λg @ f = 1.9 GHz
Z1 : 50 Ω Θ1 : 10°
C20, C21 1.3 pF, Chip Capacitor, ATC 100A
CT1, CT2 Trimmer Capacitor, Gigatrim, Ref 37271
Z2 : 50 Ω Θ2 : 74.5° ΘB : 16.5°
Z4 : 74 Ω Θ4 : 68°
TRF1
MRF6404
Z5 : 12.8 Ω Θ5 : 21°
Z6 : 10.4 Ω Θ6 : 49.5°
Z7 : 18 Ω Θ7 : 36.5°
Z8 : 45 Ω Θ8 : 20°
PC Board Material:
ε = 2.55, H = 0.508 mm, T = 0.035 mm
r
Z10 : 50 Ω Θ10 : 10°
Z11 : 74 Ω Θ11 : 60°
Z12 : 50 Ω Θ12 : 10°
Figure 15. 1.9–2.0 GHz Test Circuit Electrical Schematic and Components List
MRF6404 MRF6404K
8
MOTOROLA RF DEVICE DATA
(Not to Scale)
Teflon Glass 0.5 mm – Double Side 35 µm Cu.
Figure 16. 1.9–2.0 GHz Test Circuit Photomaster
V
+V
CC
BB
C12 C13
C7 +
L1
T1
T2
C5
C4
R3
R4
P1
R1
C10
C8
R2
C9
RF INPUT
RF OUTPUT
C1
C2
CT1
CT2
Figure 17. 1.9–2.0 GHz Test Circuit Components Layout
MOTOROLA RF DEVICE DATA
MRF6404 MRF6404K
9
PACKAGE DIMENSIONS
–A–
U
Q 2 PL
1
M
M
M
0.51 (0.020)
T
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
E
H
J
K
MAX
0.750
0.260
0.198
0.225
0.070
0.091
0.006
0.240
0.330
0.135
MIN
18.77
6.10
4.19
5.46
1.40
2.01
0.10
5.33
8.00
3.18
MAX
19.05
6.60
5.03
5.72
1.78
2.31
0.15
6.10
8.38
3.42
0.739
0.240
0.165
0.215
0.055
0.079
0.004
0.210
0.315
0.125
–B–
3
K
2
N
Q
U
0.560 BSC
14.23 BSC
D
N
STYLE 1:
PIN 1. BASE
E
2. COLLECTOR
3. EMITTER
J
C
H
SEATING
PLANE
–T–
CASE 395C–01
ISSUE A
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MRF6404/D
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