BUL146U_技术文档

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SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Transistor

For Switching Power Supply Applications

*Motorola Preferred Device

The BUL146/BUL146F have an applications specific state–of–the–art die designed

for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power

supplies for all types of electronic equipment. These high voltage/high speed

transistors offer the following:

POWER TRANSISTOR

6.0 AMPERES

700 VOLTS

40 and 100 WATTS

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Full Characterization at 125°C

Parametric Distributions are Tight and Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

BUL146F, Isolated Case 221D, is UL Recognized to 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL146

BUL146F

400

Unit

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

V

CEO

Vdc

Adc

V

700

9.0

CES

EBO

BUL146

CASE 221A–06

TO–220AB

V

Collector Current — Continuous

— Peak(1)

I

C

6.0

15

I

CM

Base Current — Continuous

— Peak(1)

I

4.0

8.0

Adc

V

B

I

BM

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

V

—

4500

3500

1500

ISOL

T

C

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

C

P

D

100

0.8

40

0.32

Watts

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

J

stg

THERMAL CHARACTERISTICS

Rating

Symbol

BUL44

BUL44F

Unit

BUL146F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Thermal Resistance — Junction to Case

R

1.25

62.5

3.125

62.5

°C/W

θJC

θJA

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

400

—

Vdc

µAdc

C

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

I

CEO

100

CE

CEO

B

= Rated V

, V

= 0)

I

—

100

500

100

CE

CES EB

CES

(T = 125°C)

C

Collector Cutoff Current (V

CE

= 500 V, V

EB

= 0)

(T = 125°C)

C

Emitter Cutoff Current (V

EB

= 9.0 Vdc, I = 0)

I

—

100

µAdc

C

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

1

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

V

—

0.82

0.93

1.1

1.25

Vdc

C

B

BE(sat)

Base–Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

C

B

Collector–Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

V

—

0.22

0.20

0.30

0.5

0.7

C

B

CE(sat)

(T = 125°C)

C

Collector–Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

C

B

(T = 125°C)

C

DC Current Gain (I = 0.5 Adc, V

= 5.0 Vdc)

= 1.0 Vdc)

h

FE

14

—

30

20

13

12

20

34

—

C

CE

(T = 125°C)

C

DC Current Gain (I = 1.3 Adc, V

12

8.0

7.0

10

C

(T = 125°C)

C

DC Current Gain (I = 3.0 Adc, V

C

(T = 125°C)

C

DC Current Gain (I = 10 mAdc, V

C

= 5.0 Vdc)

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

= 10 Vdc, I = 0, f = 1.0 MHz)

f

—

14

95

—

MHz

pF

C

CE

T

Output Capacitance (V

CB

C

150

1500

E

OB

Input Capacitance (V

EB

= 8.0 V)

C

1000

pF

IB

—

2.5

6.5

—

1.0 µs

3.0 µs

1.0 µs

3.0 µs

(I = 1.3 Adc

(T = 125°C)

C

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

I

V

= 300 mAdc

B1

—

0.6

2.5

—

= 300 V)

CC

(T = 125°C)

C

V

CE(dsat)

rising I reaches 90% of

B1

—

3.0

7.0

—

(I = 3.0 Adc

final I

B1

(T = 125°C)

C

I

= 0.6 Adc

= 300 V)

(see Figure 18)

B1

—

0.75

1.4

—

V

CC

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(I = 1.3 Adc, I = 0.13 Adc

t

on

t

off

t

on

t

off

—

100

90

200

—

ns

µs

ns

µs

C

B1

= 0.65 Adc, V

I

= 300 V)

(T = 125°C)

C

B2

CC

Turn–Off Time

—

1.35

1.90

2.5

—

(T = 125°C)

C

Turn–On Time

Turn–Off Time

(I = 3.0 Adc, I = 0.6 Adc

—

90

100

150

—

C

B1

= 1.5 Adc, V

I

= 300 V)

(T = 125°C)

C

CC

—

1.7

2.1

2.5

—

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, V = 15 V, L = 200 µH)

CC

Fall Time

(I = 1.3 Adc, I = 0.13 Adc

t

fi

—

115

120

200

—

ns

µs

ns

µs

ns

µs

ns

C

B1

= 0.65 Adc)

I

(T = 125°C)

C

B2

Storage Time

Crossover Time

Fall Time

t

si

—

1.35

1.75

2.5

—

(T = 125°C)

C

t

c

—

200

210

350

—

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc

t

fi

—

85

100

150

—

C

B2

B1

I

= 1.5 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

Fall Time

t

si

—

1.75

2.25

2.5

—

(T = 125°C)

C

t

—

175

200

300

—

c

fi

(T = 125°C)

C

(I = 3.0 Adc, I = 0.6 Adc

t

80

—

210

180

—

C

B2

B1

I

= 0.6 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

t

si

2.6

—

4.5

3.8

—

(T = 125°C)

C

t

c

—

230

400

350

—

(T = 125°C)

C

2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

100

V

= 5 V

CE

T

= 125°C

T = 125°C

J

V

= 1 V

J

CE

T

= 25°C

T

= 25°C

J

T

= – 20°C

J

T

= – 20°C

10

J

1

0.01

1

0.01

0.1

1

10

0.1

I , COLLECTOR CURRENT (AMPS)

C

1

10

I

, COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

2

1

10

1

T

= 25°C

J

I

= 1 A

2 A

3 A

5 A

6 A

C

I

/I = 10

C B

0.1

T

= 25°C

= 125°C

J

I

/I = 5

C B

0

0.01

0.1

1

10

0.01

0.1

I COLLECTOR CURRENT (AMPS)

C

1

10

I

, BASE CURRENT (mA)

B

Figure 3. Collector Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

1.2

10000

1000

T

= 25°C

J

1.1

1

C

ib

f = 1 MHz

0.9

0.8

0.7

0.6

100

10

1

C

ob

T

= 25°C

J

T

= 125°C

I

/I = 5

/I = 10

C B

J

C B

0.5

0.4

0.01

0.1

1

10

1

10

100

1000

I

, COLLECTOR CURRENT (AMPS)

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

C

CE

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

3

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

1000

800

600

400

4000

3500

I = I /2

B(off) C

CC

PW = 20 µs

I

V

= I /2

C

B(off)

CC

I

/I = 5

T

= 25°C

= 125°C

C B

J

V = 300 V

= 300 V

/I = 10

C B

PW = 20 µs

I

/I = 5

C B

3000

2500

2000

1500

1000

T

= 125°C

J

I

/I = 10

C B

200

0

T

= 25°C

J

500

0

2

4

6

8

0

2

4

6

8

I

, COLLECTOR CURRENT (AMPS)

I

, COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t

Figure 8. Resistive Switching, t

off

on

2500

2000

4000

3500

3000

2500

T

= 25

= 125

°

C

I

= I /2

I

= I /2

C

CC

= 300 V

J

B(off) C

B(off)

°C

V

L

= 15 V

V

L

= 15 V

CC

= 300 V

I

/I = 5

C B

Z

C

Z

C

I

= 3 A

= 200

µH

= 200 µH

C

1500

2000

1500

1000

500

0

1000

500

0

I = 1.3 A

C

T

= 25

= 125

°

C

°C

J

I

/I = 10

C B

0

1

2

3

4

5

6

7

8

3

4

5

6

7

I

COLLECTOR CURRENT (AMPS)

h

, FORCED GAIN

C

FE

Figure 9. Inductive Storage Time, t

Figure 10. Inductive Storage Time, t (h

si FE

)

si

250

200

250

200

150

100

50

I

= I /2

= 15 V

= 300 V

B(off)

CC

Z

C

t

c

V

L

t

= 200

µH

c

t

fi

150

100

t

fi

I

= I /2

C

B(off)

CC

Z

C

50

0

V

L

= 15 V

T

= 25°C

= 300 V

T

= 25°C

= 125

J

= 125°C

= 200

µH

°C

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching, t and t

fi

Figure 12. Inductive Switching, t and t

c

fi

I /I = 5

C B

I /I = 10

C B

4

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

130

120

110

100

90

250

I

= 1.3 A

C

I

= 1.3 A

C

I

= 3 A

200

150

C

I

= I /2

C

= 15 V

= 300 V

= 200 µH

B(off)

CC

Z

C

V

L

I

= 3 A

C

80

I

= I /2

= 15 V

= 300 V

100

50

B(off) C

CC

Z

C

V

L

70

60

T

= 25°C

T

= 25°C

= 125

J

= 125°C

°C

= 200

µH

3

4

5

6

7

8

9

10

11 12

13 14

15

3

4

5

6

7

8

9

10

11 12

13

14 15

h

, FORCED GAIN

h

, FORCED GAIN

FE

Figure 13. Inductive Fall Time

Figure 14. Inductive Cross–Over Time

GUARANTEED SAFE OPERATING AREA INFORMATION

7

100

10

DC (BUL146)

5 ms

T

≤ 125°C

/I ≥ 4

= 500 µH

C

6

I

L

C B

1 ms

10

µs

1 µs

C

5

4

EXTENDED

SOA

1

3

2

V

BE(off)

DC (BUL146F)

0.1

– 5 V

1

0

0 V

–1, 5 V

600

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01

10

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0

200

400

800

V

CE

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1,0

down. Safe operating area curves indicate I – V

limits of

C

CE

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 15 is based

SECOND BREAKDOWN

DERATING

0,8

0,6

0,4

on T = 25°C; T

Second breakdown pulse limits are valid for duty cycles to

is variable depending on power level.

C

J(pk)

10% but must be derated when T > 25°C. Second break-

C

down limitations do not derate the same as thermal limita-

tions. Allowable current at the voltages shown in Figure 15

may be found at any case temperature by using the appropri-

THERMAL DERATING

ate curve on Figure 17. T

may be calculated from the

0,2

0,0

J(pk)

data in Figure 20 and 21. At any case temperatures, thermal

limitations will reduce the power that can be handled to val-

ues less than the limitations imposed by second breakdown.

For inductive loads, high voltage and current must be sus-

tained simultaneously during turn–off with the base–to–emit-

ter junction reverse–biased. The safe level is specified as a

reverse–biased safe operating area (Figure 16). This rating

is verified under clamped conditions so that the device is

never subjected to an avalanche mode.

20

40

60

80

100

120

C)

140

160

T

, CASE TEMPERATURE (

°

C

Figure 17. Forward Bias Power Derating

5

Motorola Bipolar Power Transistor Device Data

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

C

t

fi

3

dyn 1 µs

t

si

2

dyn 3 µs

1

t

10% I

C

c

V

I

10% V

0

CLAMP

–1

–2

–3

–4

–5

4

90% I

B

90% I

B

1

B

3

2

1

0

1 µs

3 µs

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I

PEAK

C

100 µF

1

µ

F

MTP8P10

MUR105

MJE210

100

3 W

Ω

150

3 W

Ω

V

PEAK

CE

V

CE

MTP8P10

MPF930

R

B1

I

1

B

I

MPF930

+10 V

out

I

B

A

I

2

B

50

Ω

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

RBSOA

L = 500

RB2 = 0

COMMON

MTP12N10

150

3 W

Ω

L = 200

µH

RB2 =

∞

RB2 = 0

500 µF

V

= 20 VOLTS

V

= 15 VOLTS

V

= 15 VOLTS

CC

(pk) = 100 mA

CC

RB1 SELECTED FOR

DESIRED I

CC

RB1 SELECTED

FOR DESIRED I

I

C

1 µF

1

B

–V

off

Table 1. Inductive Load Switching Drive Circuit

6

Motorola Bipolar Power Transistor Device Data

TYPICAL THERMAL RESPONSE

1

D = 0.5

0.2

0.1

P

(pk)

R

(t) = r(t) R

JC θJC

0.1

θ

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.05

0.02

t

READ TIME AT t

1

t

T

– T = P

R (t)

(pk) θJC

2

J(pk)

C

SINGLE PULSE

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

(t)) for BUL146

θJC

1

D = 0.5

0.2

0.1

P

(pk)

R

(t) = r(t) R

JC θJC

0.1

θ

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.05

0.02

t

READ TIME AT t

1

t

2

T

– T = P R (t)

J(pk)

C

(pk) θJC

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.1

0.01

1

10

100

1000

10000

100000

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

θJC

(t)) for BUL146F

7

Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

MOUNTED

FULLY ISOLATED

PACKAGE

CLIP

0.107

″

MIN

0.107″ MIN

PACKAGE

LEADS

HEATSINK

0.110 MIN

HEATSINK

″

Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position

for Isolation Test Number 1 for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4–40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

HEATSINK

NUT

Figure 23a. Screw–Mounted

Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

.

torque of 6 to 8 in lbs is sufficientto provide maximum power dissipation capability. The compression washer helps to maintain a constant

pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will

.

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

Additionaltests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affectingthepackage.

.

However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in lbs

of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

8

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

C

S

B

F

T

4

INCHES

MIN

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

A

K

Q

Z

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

1

2

3

U

H

STYLE 1:

PIN 1. BASE

2. COLLECTOR

L

R

J

3. EMITTER

4. COLLECTOR

V

G

T

U

V

D

N

Z

0.080

2.04

BUL44

CASE 221A–06

TO–220AB

ISSUE Y

SEATING

–T–

PLANE

–B–

C

NOTES:

F

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

S

Q

H

U

INCHES

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MIN

MAX

0.629

0.402

0.189

0.034

0.129

MIN

15.78

10.01

4.60

MAX

15.97

10.21

4.80

A

K

0.621

0.394

0.181

0.026

0.121

1

2 3

0.67

0.86

STYLE 2:

3.08

3.27

PIN 1. BASE

2. COLLECTOR

3. EMITTER

–Y–

0.100 BSC

2.54 BSC

0.123

0.018

0.500

0.045

0.129

0.025

0.562

0.060

3.13

0.46

3.27

0.64

12.70

1.14

14.27

1.52

G

N

J

0.200 BSC

5.08 BSC

R

0.126

0.107

0.096

0.259

0.134

0.111

0.104

0.267

3.21

2.72

2.44

6.58

3.40

2.81

2.64

6.78

L

D 3 PL

U

M

0.25 (0.010)

B

Y

BUL44F

CASE 221D–02

(ISOLATED TO–220 TYPE)

ISSUE D

9

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

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andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

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How to reach us:

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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

10

Motorola Bipolar Power Transistor Device Data

BUL146/D

◊


型号：	BUL146U
厂家：	MOTOROLA
描述：	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 晶体晶体管功率双极晶体管开关局域网
文件：	总10页 (文件大小：391K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUL146U [MOTOROLA]

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