BUL147/D [ETC]
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications ; 开关模式NPN双极功率晶体管开关电源的应用\n
| 型号： | BUL147/D |
| 厂家： | 
ETC |
| 描述： | SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
| 文件： | 总8页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
BUL147
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
The BUL147 have an applications specific state–of–the–art die
designed for use in electric fluorescent lamp ballasts to 180 Watts and
in Switchmode Power supplies for all types of electronic equipment.
These high–voltage/high–speed transistors offer the following:
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current
Tail)
• Parametric Distributions are Tight and Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
Rating
Symbol
BUL147
Unit
BUL147
CASE 221A–09
TO–220AB
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
CEO
400
700
9.0
Vdc
Vdc
Vdc
Adc
V
CES
EBO
V
Collector Current — Continuous
— Peak(1)
I
C
8.0
16
I
I
CM
Base Current — Continuous
— Peak(1)
I
B
4.0
8.0
Adc
BM
Total Device Dissipation
Derate above 25°C
(T = 25°C)
C
P
D
125
1.0
Watts
W/°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Rating
T , T
– 65 to 150
°C
J
stg
Symbol
BUL44
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
R
1.0
62.5
°C/W
θ
JC
JA
θ
Maximum Lead Temperature for Soldering
T
L
260
°C
Purposes: 1/8″ from Case for 5 Seconds
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2001 – Rev. 4
BUL147/D
BUL147
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)
V
400
—
—
—
—
Vdc
µAdc
µAdc
C
CEO(sus)
Collector Cutoff Current (V = Rated V
, I = 0)
I
CEO
100
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
EB
I
—
—
—
—
—
—
100
500
100
CE
CES
CES
(T = 125°C)
C
Collector Cutoff Current (V = 500 V, V = 0)
(T = 125°C)
C
CE
EB
Emitter Cutoff Current (V = 9.0 Vdc, I = 0)
I
—
—
100
µAdc
EB
C
EBO
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 0.2 Adc)
V
—
—
0.82
0.92
1.1
1.25
Vdc
C
B
BE(sat)
Base–Emitter Saturation Voltage (I = 4.5 Adc, I = 0.9 Adc)
C
B
Collector–Emitter Saturation Voltage
(I = 2.0 Adc, I = 0.2 Adc)
V
Vdc
CE(sat)
—
—
—
—
0.25
0.3
0.35
0.35
0.5
0.5
0.7
0.8
C
B
(T = 125°C)
C
(I = 4.5 Adc, I = 0.9 Adc)
C
B
(T = 125°C)
C
DC Current Gain (I = 1.0 Adc, V = 5.0 Vdc)
h
FE
14
—
8.0
7.0
10
10
—
30
12
11
18
20
34
—
—
—
—
—
—
C
CE
(T = 125°C)
C
DC Current Gain (I = 4.5 Adc, V = 1.0 Vdc)
C
CE
(T = 125°C)
C
DC Current Gain (I = 2.0 Adc, V = 1.0 Vdc) (T = 25°C to 125°C)
C
CE
C
DC Current Gain (I = 10 mAdc, V = 5.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1.0 MHz)
f
—
—
—
14
—
MHz
pF
C
CE
T
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz)
C
100
175
2500
CB
E
ob
Input Capacitance (V = 8.0 V)
C
1750
pF
EB
ib
1.0
µs
—
—
3.0
5.5
—
—
(I = 2.0 Adc
C
(T = 125°C)
C
Dynamic Saturation Volt-
age:
I
B1
= 200 mAdc
3.0
µs
—
—
0.8
1.4
—
—
V
CC
= 300 V)
Determined 1.0 µs and
3.0 µs respectively after
(T = 125°C)
C
V
Volts
CE(dsat)
1.0
µs
—
—
3.3
8.5
—
—
rising I reaches 90% of
B1
(I = 5.0 Adc
C
(T = 125°C)
C
final I
B1
I
B1
= 0.9 Adc
(see Figure 18)
3.0
µs
—
—
0.4
1.0
—
—
V
CC
= 300 V)
(T = 125°C)
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
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2
BUL147
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–On Time
(I = 2.0 Adc, I = 0.2 Adc
t
on
t
off
t
on
t
off
—
—
200
190
350
—
ns
µs
ns
µs
C
B1
I
B2
= 1.0 Adc, V = 300 V)
(T = 125°C)
C
CC
Turn–Off Time
—
—
1.0
1.6
2.5
—
(T = 125°C)
C
Turn–On Time
Turn–Off Time
(I = 4.5 Adc, I = 0.9 Adc
—
—
85
100
150
—
C
B1
I
B1
= 2.25 Adc, V = 300 V)
(T = 125°C)
C
CC
—
—
1.5
2.0
2.5
—
(T = 125°C)
C
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V, V = 15 V, L = 200 µH)
CC
clamp
Fall Time
(I = 2.0 Adc, I = 0.2 Adc
t
fi
—
—
100
120
180
—
ns
µs
ns
ns
µs
ns
ns
µs
ns
C
B1
I
B2
= 1.0 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.3
1.9
2.5
—
(T = 125°C)
C
t
c
—
—
210
230
350
—
(T = 125°C)
C
(I = 4.5 Adc, I = 0.9 Adc
t
fi
—
—
80
100
150
—
C
B1
I
B2
= 2.25 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
Fall Time
t
si
—
—
1.6
2.1
3.2
—
(T = 125°C)
C
t
c
—
—
170
200
300
—
(T = 125°C)
C
(I = 4.5 Adc, I = 0.9 Adc
t
fi
60
—
—
150
180
—
C
B1
I
B2
= 0.9 Adc)
(T = 125°C)
C
Storage Time
Crossover Time
t
si
2.6
—
—
4.3
3.8
—
(T = 125°C)
C
t
c
—
—
200
330
350
—
(T = 125°C)
C
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3
BUL147
TYPICAL STATIC CHARACTERISTICS
100
100
V
CE
= 5 V
V
CE
= 1 V
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
T = -Ă20°C
J
T = -Ă20°C
J
10
10
1
0.01
1
0.01
0.1
1
10
0.1
1
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
1.5
1
10
1
T = 25°C
J
I = 1 A
C
3 A
5 A
8 A
10 A
I /I = 10
C B
0.1
0.5
0
I /I = 5
C B
T = 25°C
T = 125°C
J
J
0.01
0.01
0.01
0.1
1
10
0.1
1
10
I , BASE CURRENT (AMPS)
B
I COLLECTOR CURRENT (AMPS)
C
Figure 3. Collector Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.3
1.2
1.1
1
10000
1000
C
T = 25°C
J
f = 1 MHz
ib
C
ob
0.9
0.8
0.7
0.6
100
10
1
T = 25°C
J
I /I = 5
C B
I /I = 10
T = 125°C
J
0.5
0.4
C B
0.01
0.1
1
10
1
10
100
I , COLLECTOR CURRENT (AMPS)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
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4
BUL147
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
600
500
400
300
200
4000
3500
3000
2500
2000
1500
1000
I
= I /2
B(off) C
= 300 V
I
= I /2
B(off) C
= 300 V
T = 25°C
T = 125°C
J
I /I = 5
C B
I /I = 10
J
V
V
CC
CC
C B
PW = 20 µs
PW = 20 µs
I /I = 5
C B
T = 125°C
J
T = 25°C
J
I /I = 10
C B
100
0
500
0
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
3500
3000
2500
2000
1500
1000
4000
3500
I
= I /2
B(off) C
= 15 V
T = 25°C
T = 125°C
J
I
= I /2
B(off) C
= 15 V
J
V
CC
V = 300 V
V
CC
V = 300 V
Z
Z
I /I = 5
C B
3000
2500
2000
1500
1000
500
L = 200 µH
L = 200 µH
C
C
I = 2 A
C
500
0
T = 25°C
T = 125°C
J
J
I /I = 10
C B
I = 4.5 A
C
0
1
2
3
4
5
6
7
8
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
I COLLECTOR CURRENT (AMPS)
C
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300
250
200
150
100
250
200
I
= I /2
B(off) C
= 15 V
T = 25°C
T = 125°C
J
J
t
c
V
CC
V = 300 V
Z
t
c
L = 200 µH
C
t
fi
150
100
50
I
= I /2
B(off) C
= 15 V
V
CC
V = 300 V
50
0
t
fi
T = 25°C
T = 125°C
J
J
Z
L = 200 µH
C
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
8
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
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5
BUL147
TYPICAL SWITCHING CHARACTERISTICS
(I = I /2 for all switching)
B2
C
180
160
140
120
100
300
250
200
150
I
= I /2
B(off) C
= 15 V
T = 25°C
T = 125°C
J
I
= I /2
B(off) C
= 15 V
I = 2 A
C
J
V
CC
V = 300 V
V
CC
V = 300 V
Z
Z
I = 2 A
C
L = 200 µH
L = 200 µH
C
C
I = 4.5 A
C
100
50
80
60
T = 25°C
T = 125°C
J
J
I = 4.5 A
C
3
4
5
6
7
8
9
10 11 12 13 14 15
3
4
5
6
7
8
9
10 11 12 13 14 15
h , FORCED GAIN
FE
h
FE
, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
9
100
10
1
DC (BUL147)
5 ms
T
≤ 125°C
C
8
I /I ≥ 4
C B
1 ms
10 µs
1 µs
L = 500 µH
C
7
6
5
4
3
2
EXTENDED
SOA
0.1
-Ă5 V
1
0
V
= 0 V
400
-1, 5 V
600
BE(off)
0.01
10
100
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
0
100
200
300
500
700
800
V
CE
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 16. Reverse Bias Switching Safe Operating Area
Figure 15. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a tran-
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate IC – VCE limits of the transistor that
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty cycles
to 10% but must be derated when TC > 25°C. Second breakdown li-
mitations do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17. TJ(pk) may
be calculated from the data in Figure 20 and NO TAG. At any case
temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by second break-
down. For inductive loads, high voltage and current must be sus-
tained simultaneously during turn–off with the base–to–emitter
junction reverse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava-
lanche mode.
1.0
SECOND BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL DERATING
0.2
0.0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 17. Forward Bias Power Derating
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6
BUL147
10
5
4
V
CE
90% I
I
C
C
9
8
7
6
5
t
fi
3
dyn 1 µs
t
si
2
dyn 3 µs
1
t
c
10% I
C
V
10% V
CLAMP
0
CLAMP
-1
-2
-3
-4
-5
4
3
2
1
0
90% I
B
I
B
90% I 1
B
1 µs
3 µs
I
B
0
1
2
3
4
5
6
7
8
TIME
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
I PEAK
C
100 µF
1 µF
MTP8P10
MUR105
MJE210
100 Ω
3 W
150 Ω
3 W
V
CE
PEAK
V
CE
MTP8P10
MPF930
R
R
B1
I 1
B
I
MPF930
+10 V
out
I
B
A
I 2
B
50 Ω
B2
V(BR)CEO(sus)
L = 10 mH
INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
RBSOA
L = 500 µH
RB2 = 0
MTP12N10
150 Ω
3 W
RB2 = ∞
500 µF
V
CC
I (pk) = 100 mA
= 20 VOLTS
V
= 15 VOLTS
V
= 15 VOLTS
CC
CC
RB1 SELECTED FOR
DESIRED I 1
RB1 SELECTED
FOR DESIRED I 1
C
1 µF
B
B
-V
off
COMMON
Table 1. Inductive Load Switching Drive Circuit
TYPICAL THERMAL RESPONSE
1
D = 0.5
0.2
0.1
P
(pk)
R
R
(t) = r(t) R
θ
JC
= 1.0°C/W MAX
θ
JC
JC
0.1
θ
0.05
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
1
t
2
T
- T = P
C
R (t)
θ
JC
J(pk)
(pk)
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.01
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 20. Typical Thermal Response (ZθJC(t)) for BUL147
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7
BUL147
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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BUL147/D
相关型号：
BUL14716A
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
MOTOROLA
BUL147AF
TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
BUL147AN
TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
BUL147AS
TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
ONSEMI
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