BUL147_技术文档

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SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Transistor

For Switching Power Supply Applications

*Motorola Preferred Device

POWER TRANSISTOR

8.0 AMPERES

700 VOLTS

45 and 125 WATTS

The BUL147/BUL147F have an applications specific state–of–the–art die designed

for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power

supplies for all types of electronic equipment. These high–voltage/high–speed

transistors offer the following:

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Parametric Distributions are Tight and Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

BUL147F, Isolated Case 221D, is UL Recognized to 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL147

BUL147F

400

Unit

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

V

CEO

Vdc

Adc

V

700

9.0

CES

EBO

V

BUL147

CASE 221A–06

TO–220AB

Collector Current — Continuous

— Peak(1)

I

C

8.0

16

I

CM

Base Current — Continuous

— Peak(1)

I

4.0

8.0

Adc

B

I

BM

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

V

ISOL

—

4500

3500

1500

Volts

T

C

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

C

P

D

125

1.0

45

0.36

Watts

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

J

stg

THERMAL CHARACTERISTICS

Rating

Symbol

BUL44

BUL44F

Unit

BUL147F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Thermal Resistance — Junction to Case

R

θJC

R

θJA

1.0

62.5

2.78

62.5

°C/W

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

400

—

Vdc

µAdc

C

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

I

CEO

100

CE

CEO

B

Collector Cutoff Current (V

= Rated V

, V

= 0)

I

—

100

500

100

CES EB

CES

(T = 125°C)

C

Collector Cutoff Current (V

CE

= 500 V, V

EB

= 0)

(T = 125°C)

C

Emitter Cutoff Current (V

EB

= 9.0 Vdc, I = 0)

I

—

100

µAdc

C

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

3–1

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (I = 2.0 Adc, I = 0.2 Adc)

V

—

0.82

0.92

1.1

1.25

Vdc

C

B

BE(sat)

Base–Emitter Saturation Voltage (I = 4.5 Adc, I = 0.9 Adc)

C

B

Collector–Emitter Saturation Voltage

(I = 2.0 Adc, I = 0.2 Adc)

V

CE(sat)

—

0.25

0.3

0.35

0.5

0.7

0.8

C

B

(T = 125°C)

C

(I = 4.5 Adc, I = 0.9 Adc)

C

B

(T = 125°C)

C

DC Current Gain (I = 1.0 Adc, V

= 5.0 Vdc)

= 1.0 Vdc)

h

FE

14

—

8.0

7.0

10

—

30

12

11

18

20

34

—

C

CE

(T = 125°C)

C

DC Current Gain (I = 4.5 Adc, V

C

(T = 125°C)

C

DC Current Gain (I = 2.0 Adc, V

= 1.0 Vdc) (T = 25°C to 125°C)

C

DC Current Gain (I = 10 mAdc, V

= 5.0 Vdc)

C

CE

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

= 10 Vdc, I = 0, f = 1.0 MHz)

f

—

14

—

MHz

pF

C

CE

T

Output Capacitance (V

CB

C

100

175

2500

E

ob

Input Capacitance (V

EB

= 8.0 V)

C

1750

pF

ib

—

3.0

5.5

—

1.0 µs

3.0 µs

1.0 µs

3.0 µs

(I = 2.0 Adc

C

(T = 125°C)

C

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

I

V

= 200 mAdc

B1

—

0.8

1.4

—

= 300 V)

CC

(T = 125°C)

C

V

Volts

CE(dsat)

rising I reaches 90% of

B1

—

3.3

8.5

—

(I = 5.0 Adc

final I

B1

C

(T = 125°C)

C

I

= 0.9 Adc

= 300 V)

(see Figure 18)

B1

—

0.4

1.0

—

V

CC

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(I = 2.0 Adc, I = 0.2 Adc

t

on

t

off

t

on

t

off

—

200

190

350

—

ns

µs

ns

µs

C

B1

= 1.0 Adc, V

I

= 300 V)

(T = 125°C)

C

B2

CC

Turn–Off Time

—

1.0

1.6

2.5

—

(T = 125°C)

C

Turn–On Time

Turn–Off Time

(I = 4.5 Adc, I = 0.9 Adc

—

85

100

150

—

C

B1

= 2.25 Adc, V

I

= 300 V)

(T = 125°C)

C

CC

—

1.5

2.0

2.5

—

(T = 125°C)

C

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, V = 15 V, L = 200 µH)

CC

Fall Time

(I = 2.0 Adc, I = 0.2 Adc

t

fi

—

100

120

180

—

ns

µs

ns

µs

ns

µs

ns

C

B1

I

= 1.0 Adc)

(T = 125°C)

C

B2

Storage Time

Crossover Time

Fall Time

t

si

—

1.3

1.9

2.5

—

(T = 125°C)

C

t

c

—

210

230

350

—

(T = 125°C)

C

(I = 4.5 Adc, I = 0.9 Adc

t

fi

—

80

100

150

—

C

B2

B1

= 2.25 Adc)

I

(T = 125°C)

C

Storage Time

Crossover Time

Fall Time

t

si

—

1.6

2.1

3.2

—

(T = 125°C)

C

t

c

—

170

200

300

—

(T = 125°C)

C

(I = 4.5 Adc, I = 0.9 Adc

t

fi

60

—

150

180

—

C

B2

B1

I

= 0.9 Adc)

(T = 125°C)

C

Storage Time

Crossover Time

t

si

2.6

—

4.3

3.8

—

(T = 125°C)

C

t

c

—

200

330

350

—

(T = 125°C)

C

3–2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

100

V

= 5 V

V

= 1 V

CE

T

= 125°C

T = 125°C

J

CE

J

T

= 25°C

T = 25°C

J

T

= – 20°C

J

T

= – 20°C

10

J

1

0.01

1

0.01

0.1

1

10

0.1

I , COLLECTOR CURRENT (AMPS)

C

1

10

I

, COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 5 Volts

2

1.5

1

10

1

T

= 25°C

J

I

= 1 A

3 A

5 A

8 A

10 A

C

I

/I = 10

C B

0.1

0.5

0

I

/I = 5

C B

T

= 25°C

= 125°C

J

0.01

0.1

1

10

0.01

0.1

I COLLECTOR CURRENT (AMPS)

C

1

10

I

, BASE CURRENT (AMPS)

B

Figure 3. Collector Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

1.3

1.2

1.1

1

10000

1000

C

T

= 25°C

ib

J

f = 1 MHz

C

ob

0.9

0.8

0.7

0.6

100

10

1

T

= 25°C

J

I

/I = 5

C B

T

= 125°C

J

0.5

0.4

/I = 10

C B

0.01

0.1

1

10

1

10

100

I

, COLLECTOR CURRENT (AMPS)

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

C

CE

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

3–3

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

600

500

400

300

200

4000

3500

3000

I

V

= I /2

C

I

V

= I /2

= 300 V

B(off)

CC

B(off) C

CC

T

= 25°C

= 125°C

I

/I = 5

J

C B

= 300 V

/I = 10

C B

PW = 20

µs

PW = 20 µs

I

/I = 5

C B

T

= 125°C

J

2500

2000

1500

1000

T

= 25°C

J

I

/I = 10

C B

100

0

500

0

1

2

3

4

5

6

7

8

1

2

3

4

5

6

7

8

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 7. Resistive Switching, t

on

Figure 8. Resistive Switching, t

off

3500

3000

2500

2000

1500

1000

4000

3500

I

V

L

= I /2

C

CC

= 300 V

T

= 25°C

= 125°C

I

= I /2

C

B(off)

= 15 V

J

B(off)

CC

Z

C

V

L

= 15 V

= 300 V

= 200 µH

Z

C

I

/I = 5

C B

3000

2500

2000

1500

1000

500

= 200 µH

I

= 2 A

C

500

0

T

= 25°C

J

I

/I = 10

C B

= 125°C

I

= 4.5 A

8

C

7

0

1

2

3

4

5

6

7

8

3

4

5

6

9

10

11 12

13 14

15

I

COLLECTOR CURRENT (AMPS)

h

, FORCED GAIN

C

FE

Figure 9. Inductive Storage Time, t

Figure 10. Inductive Storage Time, t (h

si FE

)

si

300

250

200

150

100

250

200

I

= I /2

C

CC

= 300 V

T

= 25°C

B(off)

J

t

c

V

L

= 15 V

= 125°C

Z

C

t

= 200 µH

c

t

fi

150

100

I

= I /2

C

B(off)

CC

Z

C

V

L

= 15 V

50

0

50

0

t

fi

T

= 25°C

= 125°C

= 300 V

J

= 200

µH

1

2

3

4

5

6

7

1

2

3

4

5

6

7

8

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Inductive Switching, t and t

fi

Figure 12. Inductive Switching, t and t

fi

c

I /I = 5

C B

I /I = 10

C B

3–4

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

(I

= I /2 for all switching)

B2

C

180

160

140

120

100

300

I

= I /2

= 15 V

= 300 V

= 200 µH

T

= 25

= 125

°

C

I

= I /2

= 15 V

= 300 V

= 200 µH

I

= 2 A

B(off)

CC

Z

C

J

B(off) C

CC

Z

C

V

L

°C

V

L

250

200

150

I

= 2 A

C

I

= 4.5 A

C

100

50

80

60

T

= 25°C

J

= 125°C

I

= 4.5 A

5

C

4

3

6

7

8

9

10

11 12

13 14

15

3

4

5

6

7

8

9

10 11

12

13

14

15

h

, FORCED GAIN

h , FORCED GAIN

FE

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

9

100

10

1

DC (BUL147)

5 ms

T

≤ 125°C

/I ≥ 4

= 500 µH

C

8

I

L

C B

1 ms

10

µs

1 µs

7

6

5

4

3

2

C

EXTENDED

SOA

DC (BUL147F)

0.1

– 5 V

700

1

0

V

= 0 V

–1, 5 V

600

BE(off)

0.01

10

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1000

0

100

V

200

300 400

500

800

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

1.0

down. Safe operating area curves indicate I – V

limits of

C

CE

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

SECOND BREAKDOWN

DERATING

0.8

0.6

0.4

than the curves indicate. The data of Figure 15 is based on T

C

= 25°C; T

is variable depending on power level. Second

J(pk)

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when T > 25°C. Second breakdown limita-

C

tions do not derate the same as thermal limitations. Allowable

current at the voltages shown in Figure 15 may be found at

any case temperature by using the appropriate curve on Fig-

THERMAL DERATING

ure 17. T

may be calculated from the data in Figure 20

J(pk)

0.2

0.0

and 21. At any case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction re-

verse–biased. The safe level is specified as a reverse–biased

safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode.

20

40

60

80

100

120

C)

140

160

T

, CASE TEMPERATURE (

°

C

Figure 17. Forward Bias Power Derating

3–5

Motorola Bipolar Power Transistor Device Data

10

5

4

V

CE

90% I

I

C

9

8

7

6

5

C

t

fi

3

dyn 1 µs

t

si

2

dyn 3 µs

1

t

10% I

C

c

V

I

10% V

0

CLAMP

–1

–2

–3

–4

–5

4

90% I

B

90% I

B

1

B

3

2

1

0

1 µs

3 µs

I

B

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

8

TIME

Figure 18. Dynamic Saturation Voltage Measurements

Figure 19. Inductive Switching Measurements

+15 V

I

PEAK

C

100 µF

1

µ

F

MTP8P10

MUR105

MJE210

100

3 W

Ω

150

3 W

Ω

V

PEAK

CE

V

CE

MTP8P10

MPF930

R

B1

I

1

B

I

MPF930

+10 V

out

I

B

A

I

2

B

50

Ω

B2

V(BR)CEO(sus)

L = 10 mH

INDUCTIVE SWITCHING

RBSOA

L = 500

RB2 = 0

COMMON

MTP12N10

150

3 W

Ω

L = 200

µH

RB2 =

∞

RB2 = 0

500 µF

V

= 20 VOLTS

V

= 15 VOLTS

V

= 15 VOLTS

CC

(pk) = 100 mA

CC

RB1 SELECTED FOR

DESIRED I

CC

RB1 SELECTED

FOR DESIRED I

I

C

1 µF

1

B

–V

off

Table 1. Inductive Load Switching Drive Circuit

3–6

Motorola Bipolar Power Transistor Device Data

TYPICAL THERMAL RESPONSE

1

D = 0.5

0.2

0.1

P

R

(t) = r(t) R

θ

(pk)

θ

JC

°C/W MAX

0.1

= 1.0

0.05

0.02

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

t

1

t

2

T

– T = P

C

R

(t)

JC

J(pk)

(pk)

θ

SINGLE PULSE

DUTY CYCLE, D = t /t

1 2

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

(t)) for BUL147

θJC

1

D = 0.5

0.2

P

R

(t) = r(t) R

θJC

= 2.78°C/W MAX

(pk)

θ

JC

0.1

R

0.1

θ

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.05

t

1

READ TIME AT t

1

t

2

T

– T = P

R

(t)

JC

J(pk)

C

(pk)

θ

DUTY CYCLE, D = t /t

1 2

0.02

SINGLE PULSE

0.1

0.01

1

10

100

1000

10000

100000

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

θJC

(t)) for BUL147F

3–7

Motorola Bipolar Power Transistor Device Data

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

MOUNTED

FULLY ISOLATED

PACKAGE

CLIP

0.107

″

MIN

0.107″ MIN

PACKAGE

LEADS

HEATSINK

0.110 MIN

HEATSINK

″

Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position

for Isolation Test Number 1 for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4–40 SCREW

CLIP

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

HEATSINK

NUT

Figure 23a. Screw–Mounted

Figure 23b. Clip–Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

.

torque of 6 to 8 in lbs is sufficientto provide maximum power dissipation capability. The compression washer helps to maintain a constant

pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in lbs will

.

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

Additionaltests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in lbs without adversely affectingthepackage.

.

However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in lbs

of mounting torque under any mounting conditions.

**For more information about mounting power semiconductors see Application Note AN1040.

3–8

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

C

S

B

F

T

4

INCHES

MIN

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

A

K

Q

Z

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

1

2

3

U

H

STYLE 1:

PIN 1. BASE

2. COLLECTOR

L

R

J

3. EMITTER

4. COLLECTOR

V

G

T

U

V

D

N

Z

0.080

2.04

BUL44

CASE 221A–06

TO–220AB

ISSUE Y

SEATING

–T–

PLANE

–B–

C

NOTES:

F

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

S

Q

H

U

INCHES

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MIN

MAX

0.629

0.402

0.189

0.034

0.129

MIN

15.78

10.01

4.60

MAX

15.97

10.21

4.80

A

K

0.621

0.394

0.181

0.026

0.121

1

2 3

0.67

0.86

STYLE 2:

3.08

3.27

PIN 1. BASE

2. COLLECTOR

3. EMITTER

–Y–

0.100 BSC

2.54 BSC

0.123

0.018

0.500

0.045

0.129

0.025

0.562

0.060

3.13

0.46

3.27

0.64

12.70

1.14

14.27

1.52

G

N

J

0.200 BSC

5.08 BSC

R

0.126

0.107

0.096

0.259

0.134

0.111

0.104

0.267

3.21

2.72

2.44

6.58

3.40

2.81

2.64

6.78

L

D 3 PL

U

M

0.25 (0.010)

B

Y

BUL44F

CASE 221D–02

(ISOLATED TO–220 TYPE)

ISSUE D

3–9

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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How to reach us:

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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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3–10

Motorola Bipolar Power Transistor Device Data

BUL147/D

◊


型号：	BUL147
厂家：	ONSEMI
描述：	POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS 功率晶体管8.0安培700伏45和125瓦晶体晶体管
文件：	总10页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUL147 [ONSEMI]

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