BUH150_技术文档

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SEMICONDUCTOR TECHNICAL DATA

POWER TRANSISTOR

15 AMPERES

700 VOLTS

150 WATTS

The BUH150 has an application specific state–of–art die designed for use in

150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current

during either the start–up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•

Improved Efficiency Due to the Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

FE

•

Robustness Thanks to the Technology Developed to Manufacture

this Device

Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible

Parametric Distributions

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

10

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

V

CEO

CBO

V

CES

EBO

V

Collector Current — Continuous

— Peak (1)

I

C

15

25

I

CM

Base Current — Continuous

Base Current — Peak (1)

I

6

12

Adc

B

I

BM

*Total Device Dissipation @ T = 25 C

C

*Derate above 25°C

P

D

150

1.2

Watt

W/ C

Operating and Storage Temperature

T , T

–65 to 150

C

J

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

C/W

R

θJC

R

θJA

0.85

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

T

L

260

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I = 100 mA, L = 25 mH)

C

V

400

700

10

460

860

12.3

Vdc

CEO(sus)

Collector–Base Breakdown Voltage

V

CBO

EBO

CEO

(I

CBO

= 1 mA)

Emitter–Base Breakdown Voltage

(I = 1 mA)

Vdc

EBO

Collector Cutoff Current

(V = Rated V , I = 0)

I

100

µAdc

CE CEO

B

Collector Cutoff Current

(V = Rated V , V

@ T = 25°C

I

100

1000

C

CES

CBO

= 0)

@ T = 125°C

CE CES EB

C

Collector Base Current

(V = Rated V

@ T = 25°C

I

100

1000

C

, V

@ T = 125°C

CB CBO EB

C

Emitter–Cutoff Current

(V = 9 Vdc, I = 0)

I

100

EBO

EB

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(I = 10 Adc, I = 2 Adc)

C

V

1

1.25

Vdc

BE(sat)

C

B

Collector–Emitter Saturation Voltage

(I = 2 Adc, I = 0.4 Adc)

@ T = 25°C

V

0.16

0.15

0.4

C

CE(sat)

@ T = 125°C

C

B

C

(I = 10 Adc, I = 2 Adc)

@ T = 25°C

0.45

2

1

5

Vdc

C

B

C

(I = 20 Adc, I = 4 Adc)

@ T = 25°C

C

B

DC Current Gain (I = 20 Adc, V

= 5 Vdc)

@ T = 25°C

h

FE

4

2.5

7

4.5

C

CE

C

—

@ T = 125°C

C

DC Current Gain (I = 10 Adc, V

@ T = 25°C

8

6

12

10

C

CE

C

@ T = 125°C

C

DC Current Gain (I = 2 Adc, V

CE

= 1 Vdc)

@ T = 25°C

12

14

20

22

—

C

@ T = 125°C

C

DC Current Gain (I = 100 mAdc, V

C

= 5 Vdc)

@ T = 25°C

10

20

CE

C

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

@ T = 25°C

V

1.5

2.8

2.4

5

V

C

CE(dsat)

I

= 5 Adc, I = 1 Adc

B1

C

Voltage:

Determined 3 µs after

rising I reaches

V

= 300 V

CC

@ T = 125°C

C

B1

@ T = 25°C

C

I

C

= 10 Adc, I = 2 Adc

B1

90% of final I

B1

(see Figure 19)

V

CC

= 300 V

@ T = 125°C

C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

f

23

MHz

pF

T

(I = 1 Adc, V

C CE

= 10 Vdc, f = 1 MHz)

Output Capacitance

(V = 10 Vdc, I = 0, f = 1 MHz)

C

100

150

ob

CB

Input Capacitance

(V = 8 Vdc, f = 1 MHz)

E

C

1300

1750

pF

ib

EB

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

Turn–on Time

Storage Time

Fall Time

@ T = 25°C

t

200

5.3

240

5.6

100

6.1

320

6.5

300

6.5

350

7

ns

µs

ns

µs

ns

µs

ns

µs

ns

C

on

I

= 2 Adc, I = 0.2 Adc

B1

C

@ T = 25°C

t

s

C

I

= 0.2 Adc

= 300 Vdc

B2

CC

@ T = 25°C

t

f

C

V

Turn–off Time

Turn–on Time

Storage Time

Fall Time

@ T = 25°C

t

off

t

on

C

@ T = 25°C

200

7.5

500

8

C

I

= 2 Adc, I = 0.4 Adc

B1

C

@ T = 25°C

t

s

C

I

= 0.4 Adc

= 300 Vdc

B2

@ T = 25°C

t

f

C

V

CC

Turn–off Time

Turn–on Time

@ T = 25°C

t

off

t

on

C

@ T = 25°C

450

800

650

C

= 5 Adc, I = 0.5 Adc

@ T = 125°C

C

B1

= 0.5 Adc

= 300 Vdc

C

I

B2

Turn–off Time

Turn–on Time

Turn–off Time

@ T = 25°C

t

off

t

on

t

off

2.5

3.9

3

µs

ns

µs

C

V

CC

@ T = 125°C

C

@ T = 25°C

500

900

700

2.75

C

I

= 10 Adc, I = 2 Adc

B1

@ T = 125°C

C

I

= 2 Adc

= 300 Vdc

B2

@ T = 25°C

2.25

2.75

C

V

CC

@ T = 125°C

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 µH)

CC

clamp

Fall Time

@ T = 25°C

t

110

160

250

8

ns

µs

ns

µs

ns

µs

ns

µs

ns

C

fi

@ T = 125°C

C

I

= 2 Adc

= 0.2 Adc

C

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

6.5

8

C

I

B1

B2

@ T = 125°C

C

@ T = 25°C

t

c

235

240

350

250

7.5

C

@ T = 125°C

C

@ T = 25°C

t

fi

110

170

C

@ T = 125°C

C

I

C

= 2 Adc

= 0.4 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

6

7.8

C

I

B1

B2

@ T = 125°C

C

@ T = 25°C

t

250

270

350

150

3.75

350

175

2.75

350

C

c

fi

@ T = 125°C

C

@ T = 25°C

t

110

140

C

@ T = 125°C

C

I

C

= 5 Adc

= 0.5 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

t

si

3.25

4.6

C

I

B1

B2

@ T = 125°C

C

@ T = 25°C

t

c

275

450

C

@ T = 125°C

C

@ T = 25°C

t

fi

110

160

C

@ T = 125°C

C

I

= 10 Adc

= 2 Adc

C

B1

B2

Storage Time

Crossover Time

@ T = 25°C

t

si

2.3

2.8

C

@ T = 125°C

C

@ T = 25°C

t

c

250

475

C

@ T = 125°C

C

3

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

100

V

= 1 V

V

= 3 V

CE

T

= 125°C

T

= 125°C

J

T

= –20°C

T = –20°

J

C

J

10

T = 25°C

J

T

= 25°C

J

1

0.001

1

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

100

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 3 Volt

100

10

1

V

= 5 V

I

/I = 5

CE

C B

T

= 125°C

J

T

= 125°C

J

T

= –20°C

J

T

= 25°C

T

= 25°C

10

J

T

= –20°C

0.1

0.01

J

1

0.01

0.1

1

10

100

0.001

0.01

0.1

I , COLLECTOR CURRENT (AMPS)

C

1

10

100

I

, COLLECTOR CURRENT (AMPS)

C

Figure 3. DC Current Gain @ 5 Volt

Figure 4. Collector–Emitter Saturation Voltage

10

1

1.5

1

I

/I = 10

I

/I = 5

C B

T

= –20°C

J

T

= 125°C

J

T

= 25

°

C

J

0.1

0.5

0

T

= 125°

C

J

T

= 25°C

J

0.01

0.001

0.01

0.1

1

10

100

0.001

0.01

I

0.1

1

10

100

I

, COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector–Emitter Saturation Voltage

Figure 6. Base–Emitter Saturation Region

4

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

1.5

1

2

T

= 25°C

J

I

/I = 10

C B

1.5

1

T

= –20°C

J

T

= 25

°

C

J

20 A

0.5

0

15 A

V

T

= 125

°

C

0.5

0

CE(sat)

J

(I = 1 A)

10 A

C

8 A

5 A

1

0.001

0.01

0.1

1

10

100

0.01

0.1

10

100

I

, COLLECTOR CURRENT (AMPS)

I , BASE CURRENT (A)

B

C

Figure 7. Base–Emitter Saturation Region

Figure 8. Collector Saturation Region

10000

1000

900

800

700

600

T

= 25°C

T

f

= 25°C

J

= 1 MHz

BVCER @ 10 mA

(test)

C

(pF)

ib

BVCER(sus) @ 200 mA

C

(pF)

ob

100

10

500

400

1

10

, REVERSE VOLTAGE (VOLTS)

100

10

100

1000

V

R

(Ω)

R

BE

Figure 9. Capacitance

Figure 10. Resistive Breakdown

5

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

12

10

2000

1800

1600

1400

1200

1000

800

T

= 25

= 125

°

C

I

= I

= 300 V

I

= I

= 300 V

J

B1 B2

°C

V

CC

PW = 20

CC

PW = 40

I

/I = 10

C B

µ

s

µ

s

25°C

8

6

4

125°C

I

/I = 5

C B

125°C

600

400

2

0

I

/I = 10

C B

25

°C

I

/I = 5

200

0

C B

0

3

6

9

12

15

0

5

10

I , COLLECTOR CURRENT (AMPS)

C

15

10

I

, COLLECTOR CURRENT (AMPS)

C

Figure 11. Resistive Switching, t

on

Figure 12. Resistive Switch Time, t

off

8

7

6

5

4

3

2

1

0

8

7

I

/I = 5

I

= I

I

/I = 10

I

V

L

= I

C B

B1 B2

C B

B1 B2

V

L

= 15 V

= 300 V

= 15 V

CC

= 300 V

= 200

Z

C

Z

C

6

5

4

3

2

= 200

µH

µ

H

T

= 125°C

T

= 125°C

= 25°C

J

1

0

= 25°C

1

3

5

7

9

11

13

1

4

7

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 13. Inductive Storage Time, t

si

Figure 13 Bis. Inductive Storage Time, t

si

550

450

350

250

800

700

I

V

= I

T

= 125°C

= 25°C

B1 B2

J

I

V

= I

T

= 125°C

= 25°C

B1 B2

C

= 15 V

CC

= 15 V

= 300 V

CC

= 300 V

Z

C

Z

C

600

500

400

300

200

L

= 200 µH

L

= 200 µH

t

c

t

c

t

fi

t

fi

150

50

100

0

1

3

5

7

9

11

13

0

2

4

6

8

I

, COLLECTOR CURRENT (AMPS)

I , COLLECTOR CURRENT (AMPS)

C

Figure 14. Inductive Storage Time,

Figure 15. Inductive Storage Time,

t & t @ I /I = 5

t & t @ I /I = 10

c fi C B

c

fi C B

6

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

5

4

3

2

200

T

= 125°C

= 25°C

J

I

= 5 A

C

150

100

I

= 5 A

C

I

= I

I

= I

B1 B2

Boff B2

50

0

I

= 10 A

C

V

L

= 15 V

V

L

= 15 V

1

0

CC

= 300 V

CC

= 300 V

I

= 10 A

C

T

= 125°C

= 25°C

Z

C

Z

J

= 200 µH

= 200

µH

C

2

4

6

8

10

3

4

5

6

7

8

9

10

h

, FORCED GAIN

h

, FORCED GAIN

FE

Figure 16. Inductive Storage Time

Figure 17. Inductive Fall Time

800

I

V

= I

T

= 125°C

= 25°C

B1 B2

J

700

600

500

400

= 15 V

= 300 V

CC

Z

C

L

= 200 µH

I

= 10 A

C

I

= 5 A

C

300

200

100

3

4

5

6

7

8

9

10

h

, FORCED GAIN

FE

Figure 18. Inductive Crossover Time

7

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

10

V

I

C

9

8

7

6

5

4

CE

90% I

C

t

dyn 1 µs

fi

t

si

dyn 3 µs

10% I

C

V

10% V

90% I

0 V

clamp

t

c

90% I

B

3

2

1

0

I

B1

B

1 µs

I

B

3 µs

0

1

2

3

4

5

6

8

7

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

I

PEAK

C

100 µF

1

µ

F

100

3 W

Ω

MTP8P10

MUR105

150

3 W

Ω

V

PEAK

CE

V

MTP8P10

CE

R

MPF930

B1

I

1

B

MPF930

I

+10 V

out

I

B

A

I

2

B

50

Ω

R

B2

MJE210

COMMON

MTP12N10

150

3 W

Ω

V

Inductive Switching

L = 200

RBSOA

L = 500 µH

(BR)CEO(sus)

L = 10 mH

500 µF

µ

H

R

=

∞

R

= 0

= 15 Volts

selected for

R

= 0

= 15 Volts

B2

1

µF

V

I

= 20 Volts

V

R

V

CC

B1

CC

= 100 mA

R selected for

C(pk)

B1

–V

off

desired I

B1

desired I

B1

TYPICAL THERMAL RESPONSE

1

SECOND BREAKDOWN

DERATING

0.8

0.6

0.4

THERMAL DERATING

0.2

0

20

40

60

80

100

120

C)

140

160

T

, CASE TEMPERATURE (

°

C

Figure 21. Forward Bias Power Derating

8

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

T

may be calculated from the data in Figure 24. At any

J(pk)

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn–off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating

area (Figure 23). This rating is verified under clamped

conditions so that the device is never subjected to an

avalanche mode.

down. Safe operating area curves indicate I –V

limits of

C

CE

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 22 is based

on T = 25°C; T

Second breakdown pulse limits are valid for duty cycles to

is variable depending on power level.

C

J(pk)

10% but must be derated when T > 25°C. Second

C

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using

the appropriate curve on Figure 21.

100

16

GAIN

≥

5

T

L

≤

125

°C

C

14

12

10

8

1 µs

= 4 mH

10

µ

s

10

1

5 ms

1 ms

DC

6

–5 V

0.1

4

0 V

–1.5 V

2

0

0.01

1

10

100

1000

300

400

V , COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

500

600

700

800

V

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

Figure 22. Forward Bias Safe Operating Area

Figure 23. Reverse Bias Safe Operating Area

TYPICAL THERMAL RESPONSE

1

0.5

0.2

0.1

P

(pk)

R

(t) = r(t) R

θ

JC

°C/W MAX

= 0.83

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

0.05

0.02

t

1

READ TIME AT t

1

t

2

T

– T = P

C

R

(t)

JC

J(pk)

(pk)

θ

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.1

0.01

1

10

100

1000

t, TIME (ms)

Figure 24. Typical Thermal Response (Z

θJC

(t)) for BUH150

9

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

SEATING

PLANE

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

C

S

B

F

T

4

INCHES

MIN

MILLIMETERS

DIM

A

B

C

D

F

G

H

J

K

L

N

Q

R

S

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

–––

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

–––

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

–––

A

K

Q

Z

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

–––

1

2

3

U

H

L

R

J

V

G

T

U

V

D

N

Z

0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

TO–220AB

ISSUE Y

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

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How to reach us:

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HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

10

Motorola Bipolar Power Transistor Device Data

BUH150/D

◊


型号：	BUH150
厂家：	MOTOROLA
描述：	POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS 功率晶体管15安培700伏150瓦晶体晶体管
文件：	总10页 (文件大小：465K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BUH150 [MOTOROLA]

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