BAV99RWT1 [MOTOROLA]

SC-70/SOT-323 Dual Series Switching Diode; SC - 70 / SOT- 323双系列开关二极管


型号：	BAV99RWT1
厂家：	MOTOROLA
描述：	SC-70/SOT-323 Dual Series Switching Diode SC - 70 / SOT- 323双系列开关二极管整流二极管开关
文件：	总6页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BAV99WT1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Devices

The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.

Suggested Applications

•

ESD Protection

Polarity Reversal Protection

Data Line Protection

Inductive Load Protection

Steering Logic

ANODE

CATHODE

MAXIMUM RATINGS (EACH DIODE)

Rating

CATHODE/ANODE

Symbol

Value

Unit

Vdc

mAdc

BAV99WT1

CASE 419–02, STYLE 9

SC–70/SOT–323

Reverse Voltage

Forward Current

215

500

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

CATHODE

ANODE

RRM

(1)

Average Rectified Forward Current

715

F(AV)

(averaged over any 20 ms period)

Repetitive Peak Forward Current

Non–Repetitive Peak Forward Current

450

CATHODE/ANODE

FRM

BAV99RWT1

CASE 419–02, STYLE 10

SC–70/SOT–323

FSM

t = 1.0

2.0

1.0

0.5

t = 1.0 ms

t = 1.0 S

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

(1)

T = 25°C

200

FR–5 Board,

Derate above 25°C

1.6

625

300

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

T , T

J stg

–65 to +150

°C

1. FR–5 = 1.0

0.75

0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

DEVICE MARKING

BAV99WT1 = A7

BAV99RWT1 = F7

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mot^oo^tor^ro^ol^la^a,S^Inm^c.a¹⁹ll⁹–⁶Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I

= 100 µA)

—

Vdc

Adc

(BR)

Reverse Voltage Leakage Current (V = 70 Vdc)

—

2.5

(V = 25 Vdc, T = 150°C)

(V = 70 Vdc, T = 150°C)

Diode Capacitance

(V = 0, f = 1.0 MHz)

—

1.5

Forward Voltage (I = 1.0 mAdc)

—

715

855

1000

1250

mVdc

(I = 10 mAdc)

(I = 50 mAdc)

(I = 150 mAdc)

Reverse Recovery Time (I = I = 10 mAdc, i

= 1.0 mAdc) (Figure 1) R = 100

—

6.0

R(REC)

Forward Recovery Voltage (I = 10 mA, t = 20 ns)

1.75

820

Ω

+10 V

2 k

0.1 µF

100 µH

10%

90%

0.1

µF

DUT

Ω

OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

= 1 mA

R(REC)

OUTPUT PULSE

(I = I = 10 mA; measured

INPUT SIGNAL

at i

= 1 mA)

R(REC)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.

Notes: 2. Input pulse is adjusted so I

R(peak)

is equal to 10 mA.

Notes: 3. t » t

Figure 1. Recovery Time Equivalent Test Circuit

Motorola Small–Signal Transistors, FETs and Diodes Device Data

CURVES APPLICABLE TO EACH DIODE

100

= 150

= 125

1.0

0.1

= 85°C

T = 85°C

= 25°C

1.0

0.1

= 55

°C

0.01

= –40

°C

= 25

°C

0.001

0.2

0.4

0.6

0.8

1.0

1.2

V , REVERSE VOLTAGE (VOLTS)

V , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

Figure 3. Leakage Current

0.68

0.64

0.60

0.56

0.52

, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

0.025

0.65

0.025

0.65

0.075

1.9

0.035

0.9

0.028

0.7

inches

SC–70/SOT–323

SC–70/SOT–323 POWER DISSIPATION

The power dissipation of the SC–70/SOT–323 is a function

SOLDERING PRECAUTIONS

of the pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

by T

, the maximum rated junction temperature of the

, the thermal resistance from the device junction to

J(max)

die, R

θJA

ambient, and the operating temperature, T . Using the

values provided on the data sheet for the SC–70/SOT–323

package, P can be calculated as follows:

•

Always preheat the device.

The delta temperature between the preheat and soldering

should be 100°C or less.*

– T

J(max)

θJA

•

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T of 25°C, one can

calculate the power dissipation of the device which in this

case is 200 milliwatts.

•

The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

150°C – 25°C

625°C/W

= 200 milliwatts

The 625°C/W for the SC–70/SOT–323 package assumes

the use of the recommended footprint on a glass epoxy

printed circuit board to achieve a power dissipation of 200

milliwatts. There are other alternatives to achieving higher

power dissipation from the SC–70/SOT–323 package.

Another alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad . Using a board

material such as Thermal Clad, an aluminum core board, the

power dissipation can be doubled using the same footprint.

•

Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.087

0.053

0.049

0.016

0.055

0.004

0.010

MIN

1.80

1.15

0.90

0.30

1.20

0.00

0.10

MAX

2.20

1.35

1.25

0.40

1.40

0.10

0.25

0.071

0.045

0.035

0.012

0.047

0.000

0.004

0.017 REF

0.026 BSC

0.028 REF

0.425 REF

0.650 BSC

0.700 REF

0.031

0.079

0.012

0.039

0.087

0.016

0.80

2.00

0.30

1.00

2.20

0.40

0.05 (0.002)

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. CATHODE–ANODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

CASE 419–02

ISSUE H

SC–70/SOT–323

3. ANODE–CATHODE

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

BAV99WT1/D

◊

BAV99RWT1 [MOTOROLA]

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