PM75CL1B060 [MITSUBISHI]
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE; 智能功率模块FLAT- BASE型绝缘包装
| 型号： | PM75CL1B060 |
| 厂家： | 
Mitsubishi Group |
| 描述： | INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE |
| 文件： | 总9页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75CL1B060
FEATURE
Inverter + Drive & Protection IC
a) Adopting new 5th generation Full-Gate CSTBTTM chip
b) The over-temperature protection which detects the chip sur-
face temperature of CSTBTTM is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.
• 3φ 75A, 600V Current-sense and temperature sense
IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-FO available
from upper arm devices)
• UL Recognized
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
L A B E L
120
7
106 0.25
66.5
19.75
3.25
17
16
3
16
3-2
16
16
3-2
15.25
6-2
3-2
1.5
2-φ5.5
1
5
9
13
19
MOUNTING HOLES
B
U
V
W
4
4
4
4
4
4
4
4
9.5
2.5
19.5
22
Terminal code
1. VUPC 11. WP
23
23
98.25
23
7.75
2. UFO
3. UP
12. VWP1
13. VNC
19-■0.5
4. VUP1 14. VN1
5. VVPC 15. NC
6. VFO
7. VP
16. UN
17. VN
8. VVP1 18. WN
9. VWPC 19. Fo
10. WFO
May 2009
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
W
WPC
P
V
O
WP1
V
P
V
O
VP1
U
P
VUP1
UFO
NC Fo
V
NC
W
N
V
N1
V
N
U
N
V
WF
V
VPC
VF
V
UPC
1.5k
1.5k
1.5k
1.5k
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
NC
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
IC
Parameter
Collector-Emitter Voltage
Collector Current
Condition
Ratings
600
Unit
V
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
(Note-1)
(Note-1)
75
A
ICP
Collector Current (Peak)
Collector Dissipation
Junction Temperature
150
A
PC
TC = 25°C
337
W
°C
Tj
–20 ~ +150
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol
Parameter
Condition
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
Ratings
20
Unit
V
VD
Supply Voltage
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
VCIN
20
V
Input Voltage
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
FO-VNC
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
20
20
V
Sink current at UFO, VFO, WFO, FO terminals
mA
May 2009
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
SC
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125°C Start
400
V
VCC(PROT)
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value
500
–40 ~ +125
2500
V
Storage Temperature
Isolation Voltage
Tstg
Viso
°C
Vrms
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
THERMAL RESISTANCES
Limits
Typ.
—
Condition
Symbol
Unit
Parameter
Min.
—
Max.
0.37
0.63
Junction to case Thermal
Resistances
Inverter IGBT part (per 1 element)
Inverter FWDi part (per 1 element)
Case to fin, (per 1 module)
(Note-1)
Rth(j-c)Q
Rth(j-c)F
(Note-1)
—
—
°C/W
Rth(c-f)
Contact Thermal Resistance
0.038
—
—
Thermal grease applied
(Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-1) Tc (under the chip) measurement point is below.
(unit : mm)
WN
arm
UP
VP
WP
UN
VN
axis
IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X
Y
27.9
–6.2
27.9
0.2
66.2
–6.2
66.2
0.2
85.8
–6.2
85.8
0.2
37.4
5.4
37.4
–0.8
56.1
5.4
56.1
–0.8
74.7
5.4
74.7
–0.8
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.75
1.75
1.7
Unit
Condition
Symbol
VCE(sat)
Parameter
Min.
Max.
2.35
2.35
2.8
2.0
0.8
1.0
2.3
1.0
1
Collector-Emitter Saturation
Voltage
—
—
—
0.3
—
—
—
—
—
—
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
Tj = 25°C
V
V
(Fig. 1) Tj = 125°C
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
VEC
ton
FWDi Forward Voltage
0.8
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
0.4
trr
µs
0.4
tc(on)
toff
Switching Time
1.0
Inductive Load
(Fig. 3,4)
Tj = 25°C
Tj = 125°C
0.3
tc(off)
Collector-Emitter Cutoff
Current
—
ICES
V
CE = VCES, V
D
= 15V
(Fig. 5)
mA
—
10
May 2009
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Limits
Unit
Symbol
Parameter
Circuit Current
Condition
Min.
—
Typ.
6
Max.
12
VN1-VNC
ID
VD = 15V, VCIN = 15V
mA
V*P1-V*PC
—
2
4
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Vth(ON)
Vth(OFF)
SC
1.2
1.7
150
1.5
2.0
—
1.8
2.3
—
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
V
A
–20 ≤ Tj ≤ 125°C, VD = 15V
(Fig. 3,6)
VD = 15V
(Fig. 3,6)
µs
toff(SC)
—
0.2
—
Trip level
OT
135
—
—
20
—
—
°C
V
Over Temperature Protection
Detect Temperature of IGBT chip
–20 ≤ Tj ≤ 125°C
Hysteresis
Trip level
OT(hys)
UV
Supply Circuit Under-Voltage
Protection
11.5
—
12.0
12.5
—
12.5
—
Reset level
UVr
IFO(H)
IFO(L)
—
0.01
15
VD = 15V, VCIN = 15V
VD = 15V
(Note-2)
(Note-2)
mA
ms
Fault Output Current
—
10
Minimum Fault Output Pulse
Width
tFO
1.0
1.8
—
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Limits
Typ.
3.0
Condition
—
Unit
Parameter
Mounting torque
Weight
Symbol
Min.
2.5
—
Max.
3.5
—
—
—
Mounting part
screw : M5
N • m
g
340
RECOMMENDED CONDITIONS FOR USE
Symbol Parameter
Supply Voltage
Condition
Recommended value
Unit
V
VCC
Applied across P-N terminals
≤ 400
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
VD
Control Supply Voltage
15.0 1.5
V
(Note-3)
Input ON Voltage
VCIN(ON)
VCIN(OFF)
fPWM
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
≤ 0.8
≥ 9.0
≤ 20
V
Input OFF Voltage
PWM Input Frequency
kHz
µs
Using Application Circuit of Fig. 8
Blocking
Arm Shoot-through
Time
tdead
For IPM’s each input signals
(Fig. 7)
≥ 2.0
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak
5V/µs
≤
≤2V
15V
GND
May 2009
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
P, (U,V,W)
IN
IN
Fo
Fo
Ic
–Ic
V
V
VCIN
VCIN
(15V)
(0V)
U,V,W, (N)
U,V,W, (N)
VD (all)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
Fo
trr
VCE
Signal input
(Upper Arm)
VCIN
(15V)
Ic
U,V,W
Irr
Vcc
CS
90%
Fo
Signal input
(Lower Arm)
90%
VCIN
N
P
10%
VD (all)
Fo
Ic
10%
10%
tc(on)
10%
tc(off)
b) Upper Arm Switching
Signal input
VCIN
VCIN
td(on)
(Upper Arm)
U,V,W
Vcc
CS
tr
td(off)
tf
Fo
VCIN
(15V)
Signal input
(Lower Arm)
(ton = td(on) + tr)
(toff = td(off) + tf)
N
Ic
VD (all)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN
Short Circuit Current
P, (U,V,W)
A
Constant Current
SC Trip
IN
Fo
Pulse
VCE
VCIN
(15V)
Ic
U,V,W, (N)
Fo
VD (all)
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM’ input signal VCIN
(Upper Arm)
1.5V
2V
t
1.5V
t
0V
IPM’ input signal VCIN
(Lower Arm)
0V
2V
1.5V
2V
t
t
dead
dead
t
dead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009
5
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
P
≥10µ
20k
VUP1
UFo
OT
OUT
Vcc
Fo
→
1.5k
1.5k
1.5k
+
VD
IF
Si
UP
–
In
U
VUPC
GND GND
≥0.1µ
VVP1
VFo
OT
OUT
Vcc
Fo
Si
V
D
D
VP
In
V
VVPC
GND GND
M
VWP1
WFo
OT
OUT
Vcc
Fo
Si
V
WP
In
W
VWPC
GND GND
20k
OT
Vcc
→
≥10µ
OUT
Si
In
Fo
IF
UN
N
GND GND
≥0.1µ
20k
OT
Vcc
→
OUT
≥10µ
≥10µ
Fo
IF
Si
VN
In
GND GND
≥0.1µ
20k
VN1
WN
OT
Vcc
→
OUT
Fo
IF
VD
Si
In
NC
GND GND
≥0.1µ
VNC
NC
Fo
1k
5V
1.5k
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
•
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
•
•
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
•
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
•
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
•
and improve noise immunity of the system.
May 2009
6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
100
90
80
70
60
50
40
30
20
2.0
T
j
= 25°C
VD = 15V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
15V
VD = 17V
13V
T
T
j
j
= 25°C
= 125°C
0
0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D) CHARACTERISTICS
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
(TYPICAL)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
103
7
VD = 15V
5
3
2
102
7
5
10
3
2
101
7
5
IC = 75A
3
2
T
T
j
= 25°C
= 125°C
T
T
j
j
= 25°C
j
= 125°C
100
12
13
14
15
16
17
18
0
0.5
1.0
1.5
2.0
2.5
CONTROL VOLTAGE V
D
(V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
SWITCHING TIME (ton, toff) CHARACTERISTICS
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL)
(TYPICAL)
101
7
100
V
V
CC = 300V
= 15V
7
D
5
4
3
5
4
3
T
T
j
= 25°C
t
c(off)
j
= 125°C
Inductive load
2
2
t
c(on)
100
7
10–1
7
t
off
t
c(off)
5
4
3
5
4
3
t
on
V
V
CC = 300V
= 15V
D
T
T
j
= 25°C
2
2
j
= 125°C
Inductive load
10–1
10–2
100
2
3
4 5
7
101
2
3
4 5
(A)
7
102
100
2
3
4 5
7
101
2
3
4 5
7
102
COLLECTOR CURRENT I
C
COLLECTOR CURRENT I
C
(A)
May 2009
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
50
45
40
35
30
25
20
15
10
5
V
V
CC = 300V
= 15V
V
V
CC = 300V
D = 15V
E
on
D
T
T
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
j
j
Inductive load
Inductive load
I
t
rr
rr
E
off
0
0
20
40
60
80
(A)
100
0
20
40
60
80
100
COLLECTOR CURRENT I
C
COLLECTOR REVERSE CURRENT –I
C
(A)
SWITCHING RECOVERY LOSS CHARACTERISTICS
I
D
VS. f
c
CHARACTERISTICS
(TYPICAL)
(TYPICAL)
1.8
30
25
20
15
10
5
V
V
CC = 300V
= 15V
VD = 15V
N-side
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D
T
T
j
= 25°C
= 125°C
T
T
j
= 25°C
= 125°C
j
j
Inductive load
P-side
0
0
20
40
60
80
100
0
5
10
15
(kHz)
20
25
COLLECTOR REVERSE CURRENT –I
C
(A)
fc
UV TRIP LEVEL VS. T
j
CHARACTERISTICS
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
(TYPICAL)
20
18
16
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
VD = 15V
UV
UV
t
r
6
4
2
0
–50
0
50
100
150
–50
0
50
100
150
T
j
(°C)
Tj (°C)
May 2009
8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CL1B060
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
100
7
5
3
2
10–1
7
5
3
2
10–2
Single Pulse
IGBT part;
7
5
Per unit base = Rth(j-c)Q = 0.37°C/W
3
2
FWDi part;
Per unit base = Rth(j-c)F = 0.63°C/W
10–5 2 3 5710–4 2 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101
10–3
TIME t (sec)
May 2009
9
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