概述
数据手册MGFC4419G 概述
InGaAs HEMT Chip 的InGaAs HEMT芯片
MGFC4419G 数据手册
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PDF下载MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
MGFC4419G
Notice : This is not a final specification
Some parametric limits are subject to change.
InGaAs HEMT Chip
DESCRIPTION
OUTLINE DRAWING
The MGFC4419G low-noise HEMT(High electron Mobility
Transistor) is designed for use in X to K band amplifiers.
FEATURES (TARGET)
Low noise figure
NFmin,=0.5 dB (MAX.)
@ f=12GHz
@ f=12GHz
High associated gain
Gs=12.0 dB (MIN.)
APPLICATION
X to K band amplifiers.
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
( Ta=25°C )
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
-4
-4
60
V
mA
mW
°C
°C
PT
Total power dissipation
Channel temperature
Storage temperature
50
Tch
125
Tstg
-65 ~ +125
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
( Ta=25°C )
ELECTRICAL CHARACTERISTICS
Limits
Test conditions
Unit
Symbol
Parameter
Min.
-3
Typ.
—
Max
—
V(BR)GDO
IGSS
Gate to drain breakdown voltage
IG= -10µA
V
µA
mA
Gate to source leakage current
Saturated drain current
VGS=2V, VDS=0V
VDS=2V, VGS=0V
VDS=2V, ID=500µA
VDS=2V, ID=10mA
—
—
50
IDSS
—
—
60
VGS (off)
gm
Gate to Source cut-off voltage
Transconductance
-0.1
—
—
-1.5
—
V
75
mS
Gs
Associated gain
—
12
—
13.5
—
dB
dB
VDS=2V, ID=10mA
f=12GHz
0.5
NFmin
Minimum noise figure
as of Jan.'98
MITSUBISHI
ELECTRIC
(1/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
MGFC4419G
Notice : This is not a final specification
Some parametric limits are subject to change.
InGaAs HEMT Chip
Typical Characteristics
as of Jan.'98
(2/4)
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
MGFC4419G
Notice : This is not a final specification
Some parametric limits are subject to change.
InGaAs HEMT Chip
Typical Characteristics
S Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
f
(GHz)
1
S11
S21
S12
S22
MSG/MAG
(dB)
24.9
21.9
20.1
18.9
17.9
17.1
16.5
15.9
15.4
15.0
14.6
14.2
13.9
13.6
13.3
13.0
12.7
12.5
12.2
12.0
11.8
11.5
10.8
10.1
9.7
K
Magn.
0.994
0.976
0.950
0.917
0.880
0.842
0.805
0.771
0.739
0.711
0.687
0.666
0.648
0.634
0.622
0.613
0.607
0.603
0.600
0.600
0.601
0.603
0.606
0.610
0.616
0.621
Angle
-12.2
Magn.
5.908
5.790
5.608
5.380
5.123
4.854
4.585
4.324
4.076
3.843
3.626
3.426
3.241
3.071
2.914
2.770
2.636
2.513
2.398
2.292
2.193
2.100
2.013
1.931
1.855
1.782
Angle
169.6
159.4
149.5
140.0
131.1
122.7
114.8
107.3
100.3
93.7
Magn.
0.019
0.037
0.054
0.069
0.083
0.094
0.103
0.111
0.117
0.122
0.127
0.130
0.133
0.136
0.138
0.139
0.141
0.143
0.144
0.145
0.146
0.148
0.149
0.151
0.152
0.154
Angle
82.3
74.9
67.7
61.1
54.9
49.3
44.2
39.6
35.4
31.7
28.3
25.3
22.5
20.0
17.7
15.6
13.8
12.0
10.5
9.0
Magn.
0.660
0.645
0.623
0.595
0.564
0.531
0.498
0.466
0.436
0.407
0.381
0.357
0.335
0.316
0.298
0.283
0.270
0.259
0.250
0.243
0.238
0.235
0.234
0.235
0.238
0.242
Angle
-8.9
0.017
0.038
0.065
0.100
0.143
0.192
0.246
0.304
0.364
0.425
0.486
0.546
0.604
0.660
0.713
0.763
0.810
0.853
0.892
0.927
0.958
0.984
1.006
1.024
1.037
1.045
2
-24.3
-17.6
3
-36.0
-26.0
4
-47.3
-34.0
5
-58.1
-41.6
6
-68.4
-48.7
7
-78.2
-55.5
8
-87.6
-61.9
9
-96.5
-68.1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
-104.9
-113.1
-120.9
-128.3
-135.5
-142.3
-148.9
-155.2
-161.3
-167.0
-172.6
-177.9
177.0
172.2
167.5
163.0
158.7
-74.1
87.4
-79.9
81.4
-85.6
75.7
-91.4
70.2
-97.2
64.9
-103.0
-109.0
-115.1
-121.4
-127.8
-134.3
-140.9
-147.5
-154.1
-160.6
-166.9
-173.0
59.8
54.8
50.0
45.3
40.7
36.3
7.7
31.9
6.4
27.7
5.3
23.5
4.2
19.4
3.1
15.4
2.1
9.3
Noise Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
f
(GHz)
4
Gopt.
Rn
NFmin.
(dB)
Gs
Magn.
0.71
0.62
0.55
0.48
0.45
0.45
Angle
33.0
(W)
(dB)
18.3
15.9
13.5
9.9
18.0
14.6
12.2
10.3
11.0
12.4
0.24
0.35
0.45
0.63
0.78
0.98
8
61.1
12
18
22
26
87.0
123.8
148.1
173.2
7.5
5.1
as of Jan.'98
MITSUBISHI
ELECTRIC
(3/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
MGFC4419G
Notice : This is not a final specification
Some parametric limits are subject to change.
InGaAs HEMT Chip
TECHNICAL NOTE
1. Characteristics and quality assurance
1.1 Electrical characteristics
a. DC characteristics on spec. sheet show the test conditions and values using wafer-prober. DC characteristics
are tested 100% devices.
b. RF characteristics are tested using the corresponding packaged FET. When more than 80% 0f the samples
satisfy the value of RF characteristics on spec. sheet , that wafer is accepted for shipment.
1.2 Quality assurance and reliability
a. Mechanical characteristics are tested using corresponding package with sampling test.
b. Visual inspection is complied with MITSUBISHI's technical note.
c. The electrical characteristics and the quality assurance test are sampling test. And so the shipped chips are
contained some sub-standard articles.
d. After opening the packing , the quality of chips are influenced with storage conditions. Our recommended
storage conditions and period is as follows:
Ta=25±3 deg.C
MITSUBISHI's packing + Desiccator
Opened packing + Desiccator
6 months
2 months
In the desiccator , leave the chips in the pack keeping up-side-up and store in a clean and dry enviroment ,
preferable dry N2.
e. Packing quantity
Standard : 400 pcs. or 50 pcs. / each waffle pack
Custom order : 25~400 pcs. / each waffle pack by 25 pcs. step
In case of long storage exceeding 2 months at customer after opening the packing , total quantity of order
shall be separated and small unit quantity of each orders shall be custome ordered. In this case , we may
prepare special spec. No. for each customer. (ex . -21,-22 )
1.3 Others
The device shall not be returned in the following case.
a. Inadequate storage
b. Mishandling
c. Incorrect die/wire bonding
d. RF characteristics failure rate less than 30%.
Table.1. Standard specifications
2. Ordering information
Spec.No. Visual Grade Unit quantity for
The classification with Visual grade & packing quantity
each waffle packe
is listed in Table.1.
-A01
-A02
-A03
A
B
C
400 pcs
25 pcs
-A11
-A12
-A13
A
B
C
as of Jan.'98
MITSUBISHI
ELECTRIC
(4/4)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
PRELIMINARY
MGFC4419G
Notice : This is not a final specification
Some parametric limits are subject to change.
InGaAs HEMT Chip
S Parameters for MGFC4419G (Simulated Value)
(Conditions:VDS=2V,IDS=10mA,Ta=25C)
f
S11
S21
S12
S22
K
GMAX
(dB)
(GHz)
Magn.
Angle
Magn.
Angle
Mag.
Angle
Mag.
Angle
1
2
3
4
5
6
7
8
0.994
0.977
0.951
0.918
0.882
0.844
0.808
0.773
0.742
0.713
0.688
0.667
0.649
0.634
0.623
0.614
0.607
0.603
0.600
0.599
0.600
0.602
0.606
0.610
0.615
0.621
0.627
0.634
0.641
0.649
0.657
0.664
0.672
0.680
0.688
0.696
0.703
0.710
0.717
0.724
-12.1
-24.1
-35.8
-47.0
-57.8
-68.1
-77.9
-87.2
-96.2
5.823
5.709
5.534
5.314
5.066
4.804
4.542
4.286
4.043
3.813
3.599
3.401
3.218
3.049
2.893
2.750
2.616
2.493
2.379
2.272
2.173
2.080
1.993
1.911
1.833
1.760
1.691
1.626
1.564
1.504
1.448
1.394
1.343
1.293
1.246
1.201
1.158
1.117
1.078
1.040
169.7
159.5
149.6
140.2
131.3
122.9
114.9
107.4
100.4
93.7
87.4
81.3
75.6
70.0
64.7
59.5
54.5
49.6
44.9
40.3
35.8
31.4
27.1
22.8
18.7
14.6
10.7
6.8
3.0
-0.8
-4.5
-8.1
-11.6
-15.0
-18.4
-21.7
-24.9
-28.1
-31.2
-34.2
0.019
0.037
0.054
0.070
0.083
0.094
0.103
0.111
0.117
0.123
0.127
0.130
0.133
0.135
0.137
0.139
0.140
0.141
0.142
0.143
0.144
0.145
0.146
0.147
0.148
0.150
0.151
0.152
0.154
0.155
0.157
0.159
0.161
0.163
0.166
0.168
0.170
0.173
0.175
0.178
82.3
74.8
67.5
60.8
54.5
48.8
43.5
38.8
34.5
30.6
27.0
23.8
20.9
18.2
15.8
13.5
11.5
9.6
0.666
0.652
0.630
0.602
0.570
0.536
0.502
0.469
0.438
0.408
0.380
0.355
0.332
0.311
0.293
0.277
0.263
0.251
0.242
0.235
0.230
0.227
0.227
0.228
0.232
0.237
0.243
0.251
0.261
0.271
0.281
0.293
0.305
0.317
0.330
0.343
0.356
0.369
0.382
0.394
-8.8
-17.4
-25.7
-33.7
-41.2
-48.3
-55.1
-61.6
-67.7
-73.7
-79.6
-85.5
-91.3
-97.3
-103.4
-109.6
-116.0
-122.6
-129.4
-136.3
-143.3
-150.4
-157.3
-164.2
-170.8
-177.2
176.8
171.0
165.6
160.5
155.7
151.1
146.9
142.8
139.0
135.4
132.0
128.7
125.6
122.6
0.05
0.10
0.16
0.21
0.26
0.31
0.36
0.41
0.46
0.51
0.56
0.61
0.66
0.71
0.75
0.80
0.84
0.88
0.92
0.95
0.99
1.02
1.04
1.07
1.09
1.11
1.13
1.14
1.15
1.15
1.16
1.16
1.16
1.15
1.15
1.14
1.13
1.12
1.11
1.10
24.8
21.8
20.1
18.8
17.9
17.1
16.4
15.9
15.4
14.9
14.5
14.2
13.8
13.5
13.2
13.0
12.7
12.5
12.2
12.0
11.8
10.8
10.1
9.5
9.1
8.7
8.3
8.0
7.7
7.5
7.2
7.0
6.8
6.6
6.4
6.3
6.1
6.0
5.8
5.7
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
-104.7
-112.9
-120.7
-128.2
-135.4
-142.4
-149.0
-155.4
-161.5
-167.3
-172.9
-178.3
176.6
171.7
167.0
162.5
158.2
154.0
150.1
146.3
142.6
139.1
135.8
132.5
129.4
126.4
123.4
120.6
117.9
115.3
112.8
7.9
6.3
4.9
3.5
2.2
1.1
-0.1
-1.1
-2.1
-3.1
-4.1
-5.1
-6.0
-7.0
-8.0
-9.0
-10.0
-11.0
-12.1
-13.2
-14.3
-15.4
as of Jan.'98
MITSUBISHI
ELECTRIC
MGFC4419G 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MGFC4419G-A01 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4419G-A02 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4419G-A03 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4419G-A11 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4419G-A12 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4419G-A13 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4424D-03 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6 | 获取价格 |
|
| MGFC4427D-03 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6 | 获取价格 |
|
| MGFC4453A-A03 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
| MGFC4453A-A13 | MITSUBISHI | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 | 获取价格 |
|
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