MGFC4419G-A03 [MITSUBISHI]
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3;![MGFC4419G-A03](http://pdffile.icpdf.com/pdf2/p00268/img/icpdf/MGFC4419G-A0_1613366_icpdf.jpg)
型号: | MGFC4419G-A03 |
厂家: | ![]() |
描述: | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 放大器 晶体管 |
文件: | 总6页 (文件大小:255K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MGFC4419G-A11
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
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MGFC4419G-A12
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
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MGFC4419G-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
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MGFC4453A-A03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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MGFC4453A-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
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