MGFC4419G-A01 [MITSUBISHI]
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3;
| 型号： | MGFC4419G-A01 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3 |
| 文件： | 总6页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
MGFC4419G-A02
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4419G-A03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4419G-A11
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4419G-A12
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4419G-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4424D-03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
MGFC4427D-03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6
MITSUBISHI
MGFC4453A-A03
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
MGFC4453A-A13
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-3
MITSUBISHI
©2020 ICPDF网 联系我们和版权申明