MGFC36V3742A-51 [MITSUBISHI]
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET;
| 型号： | MGFC36V3742A-51 |
| 厂家： | 
Mitsubishi Group |
| 描述： | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 局域网 放大器 CD 晶体管 |
| 文件： | 总2页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3742A
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
.
DESCRIPTION
The MGFC36V3742A is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 ~ 4.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
OUTLINE DRAWING Unit : millimeters
FEATURES
Class A operation
0.6 +/-0.15
Internally matched to 50(ohm) system
High output power
(2)
(2)
P1dB = 4W (TYP.) @ f=3.7~4.2GHz
High power gain
R-1.6
GLP = 12.5 dB (TYP.) @ f=3.7~4.2GHz
High power added efficiency
P.A.E. = 33 % (TYP.) @ f=3.7~4.2GHz
Low distortion [ item -51 ]
(3)
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 3.7~4.2 GHz band power amplifier
item 51 : 3.7~4.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10(V)
ID = 1.2 (A)
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-8
Rg = 100(ohm) Refer to Bias Procedure
(Ta=25 deg.C)
ABSOLUTE MAXIMUM RATINGS
< Keep safety first in your circuit designs! >
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Ratings
-15
Unit
V
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire
or property damage. Remember to give due consideration to
safety when making your circuit designs, with appropriate
measures such as (1)placement of substitutive, auxiliary
circuits, (2)use of non-flammable material or (3)prevention
against any malfunction or mishap.
-15
V
3.75
-10
A
IGR
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
mA
mA
W
IGF
21
PT
25
Tch
175
deg.C
deg.C
Tstg
-65 / +175
*1 : Tc=25 deg.C
(Ta=25 deg.C)
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
-
Max.
IDSS
gm
Saturated drain current
Transconductance
VDS=3V, VGS=0V
VDS=3V, ID=1.1A
VDS=3V, ID=10mA
-
-
3.75
A
S
1
-
VGS(off)
P1dB
GLP
ID
Gate to source cut-off voltage
Output power at 1dB gain compression
Linear power gain
-
-
-4.5
V
35
10
-
37
12.5
-
-
-
dBm
dB
VDS=10V, ID(RF off)=1.2A, f=3.7~4.2GHz
Drain current
1.8
-
A
P.A.E.
IM3
Power added efficiency
-
33
-45
5
%
3rd order IM distortion
*1
*2
-42
-
-
dBc
deg.C/W
Rth(ch-c) Thermal resistance
Delta Vf method
6
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz
*2 : Channel to case
Oct-'03
MITSUBISHI
ELECTRIC
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